Semiconductor Energy Laboratory Co., Ltd.

Other

Hiromichi Godo

Shunpei Yamazaki

Satoshi Kobayashi

Yoshiyuki Kurokawa

Daisuke Kawae

Atsuo Isobe

Kaoru Tsuchiya

Junpei Momo

Masayuki Sakakura

Hidekazu Miyairi

Kazutaka Kuriki

Kazuki Tsuda

Junichiro Sakata

Satoru Ohshita

Hideomi Suzawa

Takayuki Inoue

Yasuhiko Takemura

Kengo Akimoto

Hideto Ohnuma

Akiharu Miyanaga

Masashi Tsubuku

Yoshiaki Oikawa

Tetsuji Yamaguchi

Koji Dairiki

Takashi Shimazu

Hitoshi Kunitake

Hotaka Maruyama

Shuhei Yoshitomi

Hidefumi Rikimaru

Kiyoshi Kato

Yasuyuki Arai

Shinya Sasagawa

Satoshi Murakami

Aya Anzai

Kouhei Toyotaka

Tetsuhiro Tanaka

Satoru Okamoto

Hideyuki Kishida

Yutaka Okazaki

Yasumasa Yamane

Suzunosuke Hiraishi

Hiroshi Fujiki

Erumu Kikuchi

Kei Takahashi

Takayuki Ikeda

Hisao Ikeda

Akihisa Shimomura

Yasuhiro Jinbo

Motomu Kurata

Hajime Tokunaga

Tetsuya Kakehata

Takahiro Fukutome

Ryota Fukumoto

Mayumi Mikami

Fumito Isaka

Ryota Imahayashi

Junpei Sugao

Satohiro Okamoto

Sho Kato

Koki Inoue

Eriko Nishida

Mari Terashima

Hajime Kimura

Mitsuaki Osame

Kenichi Okazaki

Yutaka Shionoiri

Hideki Uochi

Takanori Matsuzaki

Tatsuya Onuki

Hiroki Inoue

Yuki Okamoto

Seiichi Yoneda

Yuji Iwaki

Toshiyuki Isa

Yasuko Watanabe

Tomoya Futamura

Kazuaki Ohshima

Yusuke Sekine

Seiko Inoue

Yusuke Negoro

Tatsunori Inoue

Keisuke Murayama

Takafumi Mizoguchi

Satoshi Shinohara

Kazuma Furutani

Shinobu Furukawa

Tomoe Matsubara

Shigeru Tamaki

Takuro Kanemura

Masataka Shiokawa

Atsuya Tokinosu

Taisuke Higashi

Wataru Uesugi

Hiroya Hibino

An authentication system for an electronic device with a high security level is provided. The authentication system includes a data retention means that accumulates first data related to a state of the electronic device being used by a first user registered in advance and generates a first data group, a first authentication means that authenticates a second user operating the electronic device as the first user and releases a locked state, a data acquisition means that acquires second data related to a state of the electronic device being used by the second user in a state where the locked state is released, and a second authentication means that authenticates the second user as the first user on the basis of the first data group and the second data and sets the electronic device to the locked state when the second user is not authenticated. The data retention means has a function of deleting the oldest first data of the plurality of pieces of the first data included in the first data group.

Authentication system for electronic device

A display apparatus having a novel structure is provided. A plurality of display panels, a fixing member having a curved surface, and a housing storing the fixing member are included. The display panel includes a display portion including a pixel circuit, a non-display portion provided to surround the display portion, a gate driver circuit for driving the pixel circuit, and a source driver circuit. The gate driver circuit is provided at a position overlapping with the display portion. The source driver circuit is provided at a position overlapping with the non-display portion. The plurality of display panels are fixed along the curved surface of the fixing member.

Display apparatus

A highly reliable memory device is provided. The memory device includes a first conductor, a second conductor above the first conductor, a third conductor above the second conductor, a fourth conductor above the third conductor, a fifth conductor above the fourth conductor, a sixth conductor above the fifth conductor, a seventh conductor, a first insulator, a second insulator, a first semiconductor, and a second semiconductor. At least third conductor and the fourth conductor have an opening. The first insulator, the first semiconductor, the second insulator, and the second semiconductor are provided in this order on an inner surface of the opening. The seventh conductor is provided between the first semiconductor and the second insulator in a region between the third conductor and the second insulator. The first semiconductor is electrically connected to the second conductor and the fifth conductor. The second semiconductor is electrically connected to the first conductor and the sixth conductor.

Memory device and method for manufacturing the same

To provide a novel electronic device. The electronic device includes a housing and a display device. The display device includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are provided in different layers. The first layer includes a driver circuit and an arithmetic circuit. The second layer includes pixel circuits and a cell array. The third layer includes light-receiving devices and light-emitting devices. The pixel circuits each have a function of controlling light emission of the light-emitting device. The driver circuit has a function of controlling the pixel circuits. The arithmetic circuit has a function of performing arithmetic processing on the basis of first data corresponding to currents output from the light-receiving devices and second data corresponding to a potential held in the cell array.

Electronic device

To reduce oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film and to improve electric characteristics of a transistor including the oxide semiconductor film. A semiconductor device includes a gate electrode whose Gibbs free energy for oxidation is higher than that of a gate insulating film. In a region where the gate electrode is in contact with the gate insulating film, oxygen moves from the gate electrode to the gate insulating film, which is caused because the gate electrode has higher Gibbs free energy for oxidation than the gate insulating film. The oxygen passes through the gate insulating film and is supplied to the oxide semiconductor film in contact with the gate insulating film, whereby oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced.

Semiconductor device and method for manufacturing the same

A document retrieval system that retrieves documents, with concepts of the documents taken into account, is provided. The document retrieval system () includes an input unit (), a first processing unit (), a storage unit (), a second processing unit (), and an output unit (). The input unit () has a function of inputting a first document (), the first processing unit () has a function of creating a first graph structure () from the first document (), the storage unit () has a function of storing a second graph structure (), the second processing unit () has a function of calculating a similarity between the first graph structure () and the second graph structure (), the output unit () has a function of supplying information, the first processing unit () has a function of dividing the first document () into a plurality of tokens, a node and an edge of the first graph structure () have a label, and the label includes the plurality of tokens.

Document retrieval system

A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.

Semiconductor device and electronic device

A novel display apparatus is provided. The display apparatus includes a first layer including a plurality of pixel circuits, a second layer provided over the first layer, a plurality of optical lenses provided over the second layer, a display region, and a plurality of light-receiving regions. The display region includes a first pixel circuit provided in the first layer and a light-emitting device provided in the second layer. The light-receiving region includes a second pixel circuit provided in the first layer and a light-receiving device provided in the second layer. The plurality of light-receiving regions are provided around the display region. The optical lens is provided at a position overlapping with the light-receiving region.

Display apparatus and electronic device

A novel semiconductor device is provided. A structure body extending in a first direction, a first conductor extending in a second direction, and a second conductor extending in the second direction are provided. In a first intersection portion where the structure body and the first conductor intersect with each other, a first insulator, a first semiconductor, a second insulator, a second semiconductor, a third insulator, a fourth insulator, and a fifth insulator are provided concentrically around a third conductor. In a second intersection portion where the structure body and the second conductor intersect with each other, the first insulator, the first semiconductor, the second insulator, a fourth conductor, the second semiconductor, and the third insulator are provided concentrically around the third conductor.

A semiconductor device with low power consumption is provided. The semiconductor device includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first gate and a first back gate, and the second transistor includes a second gate and a second back gate. A gate insulating layer for the first back gate has ferroelectricity. The first transistor has a function of, when being in an off state, retaining a first potential corresponding to first data. The second transistor has a function of making an output current flow between a source and a drain of the second transistor.

An electronic device having an eye tracking function is provided. The electronic device includes a display device and an optical system. The display device includes a first light-emitting element, a second light-emitting element, a sensor portion, and a driver circuit portion. The sensor portion includes a light-receiving element. The first light-emitting element has a function of emitting infrared light or visible light. The second light-emitting element has a function of emitting light of a color different from that of light emitted from the first light-emitting element. When the first light-emitting element emits infrared light, the light-receiving element has a function of detecting the infrared light that is emitted from the first light-emitting element and reflected by an eyeball of a user. When the first light-emitting element emits visible light, the light-receiving element has a function of detecting the visible light that is emitted from the first light-emitting element and reflected by the eyeball of the user. The first light-emitting element and the second light-emitting element are placed in one layer. The layer where the first light-emitting element and the second light-emitting element are positioned overlaps with the sensor portion.

An electronic device that enables smooth communication is provided. The electronic device includes a display portion including a first camera; a second camera; and an image processing portion. The second camera is positioned in a region not overlapping with the display portion. The first camera has a function of generating a first image of a subject, and the second camera has a function of generating a second image of the subject. The image processing portion includes a generator that performs learning using training data. The training data includes an image including a person's face. The image processing portion has a function of making the first image clear when the first image is input to the generator and a function of tracking the gaze of the subject on the basis of the second image.

A highly reliable memory device is provided. On a side surface of a first conductor extending in a first direction, a first insulator, a first semiconductor, a second insulator, a second semiconductor, and a third insulator are provided in this order when seen from the first conductor side. A first region overlapping with a second conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator therebetween, and a second region overlapping with a third conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator therebetween are provided in the first conductor. In the second region, a fourth conductor is provided between the first insulator and the first semiconductor.

Memory device

An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

Semiconductor device, power diode, and rectifier

A novel semiconductor device is provided. A memory string, which extends in the Z direction and includes a conductor and an oxide semiconductor, intersects with a plurality of wirings CG extending in the Y direction. The conductor is placed along a center axis of the memory string, and the oxide semiconductor is concentrically placed outside the conductor. The conductor is electrically connected to the oxide semiconductor. An intersection portion of the memory string and the wiring CG functions as a transistor. In addition, the intersection portion functions as a memory cell.

Semiconductor device, driving method of semiconductor device, and electronic device

Growing community of inventors

Kanagawa, Japan

Hiromichi Godo