Kabushiki Kaisha Toshiba

Tdk Corporation

Hiromi Yuasa

Hideaki Fukuzawa

Hitoshi Iwasaki

Yoshihiko Fuji

Masashi Sahashi

Masatoshi Yoshikawa

Katsuhiko Koui

Michiko Hara

Yuzo Kamiguchi

Shuichi Murakami

Tomohiko Nagata

Hiroaki Yoda

Masayuki Takagishi

Susumu Hashimoto

Yuuzo Kamiguchi

Min Li

Kunliang Zhang

Hiromi Fuke

Alexander Devin Giddings

Mariko Shimizu

Takeo Sakakubo

Akihiko Enamito

Osamu Nishimura

Masahiro Takashita

Yoshinari Kurosaki

Masayuki Kii

Eizo Fujisawa

Erhard Theodor Schreck

Yoshihiro Higashi

Akiko Saito

Yue Liu

Tomoko Taguchi

Devin Giddings

Junichi Ito

Akihiko Takeo

Akio Hori

Katsuhiko Koi

Yoshihiro Fuji

Mlchiko Hara

A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.

Strain sensor element and blood pressure sensor

According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Pressure sensor and microphone

A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate.

Pressure sensor device

A magnetic recording device includes: a magnetic recording medium containing a plurality of recording layers; a magnetic recording head for conducting magnetic writing of information in the magnetic recording medium; and a magnetic reproducing head for conducting magnetic reading out of the information from the magnetic recording medium; wherein the magnetic recording head includes a high frequency oscillator for magnetically assisting the magnetic writing of the information so as to change a magnetization of at least one of the plurality of recording layers of the magnetic recording medium, thereby recording a plurality of information different from one another in the magnetic recording medium commensurate with a total amount of magnetization of the plurality of recording layers.

Magnetic recording device

A method is described for forming a confining current path (CCP) spacer in a CPP-GMR sensor. A first Cu spacer, an amorphous metal/alloy layer such as Hf, a second Cu spacer, and an oxidizable layer such as Al, Mg, or AlCu are sequentially deposited on a ferromagnetic layer. A pre-ion treatment (PIT) and ion assisted oxidation (IAO) transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. A third Cu layer is deposited on the second metal oxide template. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more.

Method of manufacturing a CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer

According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.

Magneto-resistive effect device, magnetic head gimbal assembly, magnetic recording/reproduction device, strain sensor, pressure sensor, blood pressure sensor, and structural health monitoring sensor

According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

Magneto-resistance effect device with mixed oxide function layer

According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.

Magnetic head, magnetic head assembly, and magnetic recording/reproduction apparatus

According to one embodiment, a method for manufacturing a pressure sensing device includes preparing a sensor unit and a mounting substrate. The sensor unit includes: a membrane body; and an element unit provided on the membrane body. The element unit includes: a first electrode; a second electrode; and a first magnetic layer provided between the first electrode and the second electrode and having magnetization in a first direction. The mounting substrate includes: a base; a first electrode pad provided on the base; and a second electrode pad provided on the base and provided apart from the first electrode pad. The method further includes joining the first electrode pad to the first electrode while heated, and joining the second electrode pad to the second electrode while heated, with an external magnetic field along the first direction applied to the sensor unit.

Method for manufacturing pressure sensing device

Growing community of inventors

Kawasaki, Japan

Hiromi Yuasa