Hitachi, Ltd.

Hiromi Tosaki

Akira Ikegami

Hideo Arima

Teruo Mozume

Nobuyuki Sugishita

Ichiro Tsubokawa

Jun Yamada

Tokio Isogai

Tsuyoshi Fujita

Gyozo Toda

Hirayoshi Tanei

Takashi Kuroki

Yasuji Kamata

Takaji Takenaka

Norio Sengoku

Toshitada Netsu

Kazutoshi Takahashi

Kiyoshi Sakashita

A semiconductor device-mounting substrate is provided with a semiconductor device, a capacitor device, and a wiring substrate. The wiring substrate has a space in which the capacitor device should be located, and the capacitor device is locate in the space. Terminals of a driving power supply wiring for the semiconductor device are provided on a surface of the space, and the terminals are connected with the capacitor device.

Structure for mounting a semiconductor device and a capacitor device on a substrate

A ceramic wiring board comprising a silica board having pores of several ten to several hundred .ANG. in diameter amounting to 5 to 20 vol % of the insulating layer, and a process for producing the same, which comprises heat-treating a silicon alkoxide to form a fine silica powder and sintering the fine powder. This board has good mechanical characteristics and a high signal propagation speed.

Ceramic wiring board and process for producing the same

Disclosed herein is a critical temperature sensitive resistor material which comprises 60 to 90% by weight of VO.sub.2 and 40 to 10% by weight of RuO.sub.2. This material exhibits hysteresis of resistance that decreases remarkably over a temperature range in which the resistance varies greatly, and is hence used for measuring the temperature maintaining a high precision.

Critical temperature sensitive resistor material

A thick film thermistor composition is prepared by mixing metal oxide powders of at least two of Mn, Co and Ni, and oxide powder of Ru as a noble metal, firing the resulting mixture, thereby obtaining a compound oxide thermistor of spinel structure, pulverizing the resulting compound oxide thermistor, and mixing and kneading the resulting thermistor powder with glass powder and oxide powder of Ru for adjusting a resistance.

Thick film thermistor composition

A method for manufacturing the insulating layers of a glass multilayer wiring board from a mixture of (1) 30-90 wt. % of a borosilicate glass consisting of 55-75 wt. % of SiO.sub.2, 13-25 wt. % of B.sub.2 O.sub.3, 5-13 wt. % of Al.sub.2 O.sub.3, each 1-5 wt. % of PbO, MgO, and BaO, and each 1-2 wt. % of Na.sub.2 O and K.sub.2 O and (2) 70-10 wt. % of a silica glass, is provided.

Glass multilayer wiring board and method for its manufacture

The multilayer circuit board is constituted of an inorganic insulating material such as a crystallizable glass, crystalline oxide or noncrystallized glass; a conductive material such as a metal or a mixture of a metal with noncrystallized glass; a resistor material consisting of a mixture of a conductive material with the crystallizable glass or noncrystallized glass; and a dielectric material consisting of a mixture of a barium titanate-other oxide mixture with the noncrystallized glass or crystallizable glass, of a lead-containing perovskite type oxide or of a lead-containing laminar bismuth oxide, said board has a multilayer structure wherein a first insulating layer; a first resistor circuit or alternatively first capacitor circuit or alternatively first resistor-capacitor circuit; a second insulating layer; a second resistor circuit or alternatively second capacitor circuit or alternatively second resistor-capacitor circuit are superposed in this order, provided that the second insulating layer has a through-hole(s) filled with the conductive material, and a process for producing the same.

Process for manufacturing a multilayer circuit board

A thermistor composition comprises oxide powder of at least two of Mn, Co, and Ni, and an oxide powder of Ru as a noble metal.

Thermistor composition

This specification discloses a thermistor composition comprising a thermistor characteristic powder, a bismuth containing borosilicate glass frit and an electrically conductive powder comprising a mixture of a noble metal powder and ruthenium oxide powder which is selected from RuO.sub.2 + Ag and RuO.sub.2 + Au wherein the mixing ratio of the metal oxide thermistor characteristic powder, the glass and the electrically conductive powder is in the area of the quadrilateral ABCD in the triangular diagram of the accompanying FIG. 1 and the amount of the ruthenium oxide powder is 15-95% by weight of total of the noble metal powder and the ruthenium oxide powder, the vertexes A, B, C and D of the quadrilateral ABCD being the points showing the following compositions:

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Yokohama, Japan

Hiromi Tosaki