Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Astemo Ltd.

Hitachi Metals, Ltd.

Hitachi Automotive Systems, Ltd.

Hitachi Construction Machinery Co., Ltd.

Hiromi Shimazu

Hiroyuki Ohta

Yohei Tanno

Tomio Iwasaki

Hideo Miura

Yujiro Kaneko

Hisashi Tanie

Shuji Ikeda

Eiichi Ide

Yusuke Takagi

Akira Matsushita

Kinya Nakatsu

Hiroyuki Ito

Masayuki Suzuki

Toshiaki Ishii

Takayuki Oshima

Nobutake Tsuyuno

Kenji Araki

Takashi Hirao

Takahiro Shimura

Atsuo Nishihara

Osamu Inoue

Akihiro Namba

Kensuke Ishikawa

Kouji Sasaki

Yoshihisa Kiyotoki

Mari Uchida

Takayuki Shimodaira

Ryuji Takada

Toru Kato

Kenji Onodera

Hiroshi Houzouji

Naoto Saito

Tsuyoshi Baba

A power module includes a first conductor plate to which a first power semiconductor element is bonded, a second conductor plate to which a second power semiconductor element is bonded, the second conductor plate being disposed adjacent to the first conductor plate, a first heat-dissipating member disposed counter to the first conductor plate and the second conductor plate, and a first insulating sheet member disposed between the first heat-dissipating member and the first conductor plate. The first power semiconductor element is disposed at a position at which a first length from an end of the first conductor plate, the end being closer to the second conductor plate, to the first power semiconductor element is larger than a second length from an end of the first conductor plate, the end being far from the second conductor plate, to the first power semiconductor element, and the second length is larger than the thickness of the first conductor plate.

Power module

A problem is that close contact with a heat dissipation surface of a power semiconductor device is not sufficient, and thus heat dissipation performance is low. A thermally conductive layerabuts on a heat dissipation surfaceof a circuit body, and a heat dissipation memberabuts on the outside of the thermally conductive layer, which is a side of the heat dissipation surfaceof the circuit body. A fixing memberabuts on a side of the circuit bodyopposite to the heat dissipation surface. A connection memberis penetrated at the respective end portions of the heat dissipation memberand the fixing member. FIG.illustrates a state before a bolt and a nut of the connection memberare tightened. The heat dissipation memberholds a curved shape such that the central portion of the heat dissipation memberprotrudes toward the circuit body. The bolt and the nut of the connection memberare fastened and fixed at both ends of the heat dissipation memberand the fixing memberso as to sandwich the circuit body. The heat dissipation memberis elastically deformed to bring the heat dissipation memberinto close contact with the heat dissipation surfaceof the circuit bodyvia the thermally conductive layer, and surface pressure is applied from the heat dissipation memberto the heat dissipation surface

Power semiconductor device and manufacturing method of power semiconductor device

A power semiconductor device includes an insulating substrate on which a first conductor layer is arranged on one surface, a first conductor that is connected to the first conductor layer via a first connecting material, and a semiconductor element that is connected to the first conductor via a first connecting material. When viewed from a direction perpendicular to an electrode surface of the semiconductor element, the first conductor includes a peripheral portion formed larger than the semiconductor element. A first recess is formed in the peripheral portion so that a thickness of the first connecting material becomes thicker than other portions.

Power semiconductor device

A power semiconductor device includes a circuit body, first and second insulations, first and second bases, a case, and a distance regulation portion. The circuit body incudes a semiconductor element and a conductive portion. The first insulation and the second insulation oppose each other. The first base and second base also oppose each other. The case has a first opening portion covered with the first base and a second opening portion covered with the second base. The distance regulation portion has a first end that contacts the first base and a second end, that is opposite to the first end, and that contacts the second base. The distance regulation portion regulates a distance between the first base and the second base.

Power semiconductor device having a distance regulation portion and power conversion apparatus including the same

The objective of the present invention is to provide a technique that ensures conduction between a gate terminal of a semiconductor switching element and a wiring layer in a semiconductor device formed with a wiring layer inside a ceramic layer. This semiconductor device comprises: a wiring layer that is inside a ceramic layer formed above an insulation layer; and a metal layer for connecting terminals from the semiconductor switching element other than the gate terminal. The wiring layer and the gate terminal from the semiconductor switching element are connected electrically via a connection part formed from a conductive material. The connection part protrudes more than the metal layer toward the semiconductor switching element.

Semiconductor device and production method therefor

An object of the present invention is to provide a power module having high reliability. The power module according to the present invention, includes a circuit body and a case housing the circuit body. The case has a first case member including a first base plate and a second case member including a second base plate. The first case member has a first side wall portion formed in an arrangement direction of the first base plate and the second base plate. The second case member has a second side wall portion formed in the arrangement direction, the second side wall portion coupling to the first side wall portion. The first side wall portion and the second side wall portion are formed so as to have the sum of lengths of the first side wall portion and the second side wall portion in the arrangement direction smaller than the thickness of the circuit body. The first case member has a deforming portion smaller than the first base plate and the second base plate in rigidity.

A lithium ion secondary battery includes a positive electrode capable of occluding and discharging lithium ions, a negative electrode capable of occluding and discharging the lithium ions, and a nonaqueous electrolyte including a lithium salt, and being reversively charged/discharged. The positive electrode includes a metal plate, a metal film formed on a surface of the metal plate, and a positive electrode active material layer, the metal film includes one or more metals selected from the group consisting of ruthenium, osmium, palladium, and platinum having a orientation, the positive electrode active material layer is a compound expressed by the following expression:LiCoNiO, (where 0&#x2266;&#x2266;1) and is epitaxially grown and formed on a surface of the metal film, and the positive electrode active material is formed such that a c axis of a crystal structure of the positive electrode active material is perpendicular to the metal film.

Lithium ion secondary battery

A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a &#x3c;100&#x3e; direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a &#x3c;110&#x3e; direction.

Mechanical-quantity measuring device

A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.

Strain measuring device

A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a &#x3c;100&#x3e; direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a &#x3c;110&#x3e; direction.

A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.

Solidification sensor

The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.

Load sensor with shock relaxation material to protect semiconductor strain sensor

A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.

Growing community of inventors

Kashiwa, Japan

Hiromi Shimazu