Elpida Memory, Inc.

Hiromi Sasaoka

Isamu Asano

Tsuyoshi Kawagoe

Tomoyasu Kakegawa

Yuta Watanabe

Naoya Higano

A semiconductor device may include, but is not limited to: a first insulating film; a second insulating film over the first insulating film; a first memory structure between the first and second insulating films; and a third insulating film between the first and second insulating films. The first memory structure may include, but is not limited to: a heater electrode; and a phase-change memory element between the heater electrode and the second insulating film. The phase-change memory element contacts the heater electrode. The third insulating film covers at least a side surface of the phase-change memory element. Empty space is positioned adjacent to at least one of the heater electrode and the third insulating film.

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Tokyo, Japan

Hiromi Sasaoka