Hitachi Metals, Ltd.

Hiromi Kikuchi

Junichi Watanabe

Hideko Fukushima

Hisayuki Imamura

Shigeru Jomura

Youichirou Kaga

Masahiko Sakakibara

In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of &#x3b2; type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in &#x3b2; type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa&#xb7;mor higher and the thermal conductivity of 90 W/m&#xb7;K or higher can be attained.

Silicon nitride substrate, a manufacturing method of the silicon nitride substrate, a silicon nitride wiring board using the silicon nitride substrate, and semiconductor module

A piezoelectric sintered ceramic made of (a) 100 parts by weight of main components having a composition represented by the general formula: (Pb,M,)(Zr,Ti,)O,, wherein M is at least one element selected from the group consisting of Sr, Ba and Ca, and y and z are numbers satisfying 0.01&lE;y&lE;0.10, and 0.51&lE;z&lE;0.56, respectively; (b) 0.05-1.0 parts by weight, as Fe,O,, of Fe; and (c) 10-1000 ppm of Ag.

Piezoelectric sintered ceramics and piezoelectric ceramic elements constituted thereby

A sputtering target having a relative density of 90% or more and a single-phase structure for forming a indium-tin oxide layer of low resistance is produced by pressing a composite powder of indium oxide and tin oxide having an average diameter of 0.1 .mu.m or less and a tin content controlled to 1.5-6 weight %; and sintering the pressed composite powder at 1500.degree.-1700.degree. C. in an oxygen atmosphere pressurized at 1-10 atm.

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Saitama, Japan

Hiromi Kikuchi