Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Hiromi Itoh

Keiichiro Kashihara

Tomonori Okudaira

Masanobu Iwasaki

Katsuhiro Tsukamoto

Akira Tokui

Katsuyoshi Mitsui

Akie Yutani

Yoshikazu Tsunemine

A method for manufacturing a capacitor is provided which can form a lower electrode having a high aspect ratio without suffering deterioration of the capacitor electric characteristics even when a platinum-group metal is adopted as the material of the lower electrode and a metal oxide having a high dielectric constant is adopted as the material of the dielectric film. Holes ( ) that reach contact plugs ( ) are formed in an insulating film ( ). Then a dielectric film ( ) is formed on the surfaces of the holes ( ). Next the dielectric film ( ) on the bottoms of the holes ( ) are etched away to form holes ( ) reaching the contact plugs ( ). Lower electrodes ( ) are then formed to fill the holes ( ) and ( ).

Capacitor manufacturing method having dielectric formed before electrode

A first interlayer insulating film having a second contact hole is formed on a main surface of a semiconductor substrate 1 in a peripheral circuitry. A second plug electrode of the same material as a first plug electrode in a memory cell array is formed in the second contact hole. A pad layer is formed over the second plug electrode and a top surface of the first interlayer insulating film. The pad layer and a capacitor lower electrode are made of the same material. The pad layer is covered with the second interlayer insulating film. A third contact hole is formed at a portion of the second interlayer insulating film located above the pad layer. A first aluminum interconnection layer is formed in the third contact hole. Thereby, a contact can be formed easily between the interconnection layer and the main surface of the semiconductor substrate in the peripheral circuitry of a DRAM, and a manufacturing process can be simplified.

Semiconductor memory device and method of manufacturing the same

Method of manufacturing a semiconductor memory device

An object of the invention is to provide a capacitor having good anti-leak characteristics and good breakdown voltage characteristics. A transfer gate transistor having source/drain regions is formed on a surface of a silicon substrate. There is provided a lower electrode layer connected to the source/drain region through a plug layer which fills a contact hole formed at an interlayer insulating film. On the lower electrode layer, there is formed a capacitor insulating layer which includes a ferroelectric layer and exposes at least a sidewall surface of the lower electrode layer. The exposed sidewall surface of the lower electrode layer is covered with a sidewall insulating layer which is formed on a top surface of the interlayer insulating film and has a sidewall spacer configuration. The lower electrode layer is covered with an upper electrode layer with the sidewall insulating layer and capacitor insulating layer therebetween.

Semiconductor device and manufacturing method of the same

In an electronic device using lead zirconate titanate (PZT) or lanthanum lead zirconate titanate (PLZT) as the main insulating material, a PZT film or a PLZT film is formed on a sub-insulating layer consisting essentially of lead titanate, lanthanum lead titanate, barium titanate, strontium titanate, barium strontium titanate, lead zirconate, or lanthanum lead zirconate. In an MIS structure, a semiconductor, the sub-insulating layer, the PZT film and metal are deposited in order. In a capacitor, the sub-insulating layer and the PZT film are sandwiched between a pair of electrodes. The sub-insulating layer improves crystallinity of PZT or PLZT, and the dielectric constant. An oxide of Pb, La, Zr or Ti can be added as the sub-insulating layer in order to further suppress current leakage.

Electronic device using zirconate titanate and barium titanate

Semiconductor device

Semiconductor memory device

The present invention provides a method for removing a natural gas film or contaminant adhering on a surface of a silicon semiconductor substrate. The semiconductor substrate having the natural oxide film or contaminant adhered thereon is placed in a chamber. Then, a HCl gas is introduced into the chamber. The semiconductor substrate is heated at a temperature in the range of 200.degree..about.700.degree. C., while ultraviolet rays are irradiated into the chamber. According to the method, the reaction of the natural oxide with HCl gas is promoted by a synergistic effect of light and heat energy. Therefore, the natural oxide film or contaminant can be removed at a lower temperature with the help of the light energy.

Method for pretreating semiconductor substrate by photochemically

A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming the thin film onto the surface of the intermediate layer, forming nuclei on the surface of the intermediate layer by introducing a silane-system gas onto the activated surface of the intermediate layer, and introducing the halide gas and a reducing gas onto the surface of the intermediate layer formed with the nuclei, thereby depositing the metal thin film on the surface of the intermediate layer.

Method of forming thin film for semiconductor device

A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200.degree..about.700.degree. C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.

Method of forming a thin film on surface of semiconductor substrate

A semiconductor device capable of improving pressure-resistant and leakage-resistant characteristics of a stacked type capacitor formed on a planarized insulating layer. The semiconductor device includes a plug electrode layer 313 of at least one material selected from the group consisting of TiN, Ti, W, and WN, buried in a contact hole 311a of an interlayer insulating films 311 and extending on and along the upper surface of interlayer insulating film 311. As a result, creation of a stepped portion on platinum layer 314 constituting a capacitor lower electrode to be formed on the plug electrode 313 is prevented, and the thickness of a PZT film 315 to be formed on platinum layer 314 is not disadvantageously made thin at the stepped portion. Therefore, the space between a capacitor upper electrode 316 and platinum layer 314 constituting the capacitor lower electrode can not be made narrow, and an electric field between platinum layer 314 and capacitor upper electrode 316 is made uniform, enhancing pressure-resistant and leakage-resistant characteristics. Also, a silicification reaction of platinum layer 314 is prevented due to plug electrode layer 313. In addition, when plug electrode layer 313 is formed of Ti or TiN, adhesion of plug electrode layer 313 and interlayer insulating film 311 is improved, and thus separation of platinum layer 314 is prevented.

Semiconductor device having a ferroelectric capacitor with a planarized

Method of an apparatus for forming thin film for semiconductor device

Apparatus for forming a thin film on surface of semiconductor substrate

An apparatus for photochemically forming a film on a substrate using a photo-induced chemical vapor deposition method comprises an optical lens through which a light beam is radiated to a reactive atmosphere gas to deposit and grow a film uniform in thickness on a substrate.

Photochemical film-forming method

A laser-induced CVD method in accordance with this invention comprises the steps of: setting a substrate in a reactive gas; applying a laser beam to the reactive gas to decompose it and produce not only free radicals but also ions due to multiphoton absorption; and applying an electric field thereby to efficiently transport the ions toward the substrate and deposit a thin film on the substrate at an increased deposition rate.

Growing community of inventors

Hyogo, Japan

Hiromi Itoh