Asahi Kasei Microdevices Corporation

Renesas Technology Corp.

Hitachi High-tech Corporation

Hiromi Fujita

Osamu Morohara

Yoshiki Sakurai

Hirotaka Geka

Daiki Yasuda

Masanori Kurimoto

Hironori Ishii

Yoshihiro Ota

Shigeru Kuriyama

Yoshihiko Shibata

Toshikazu Kawahara

Shigeki Sukegawa

Chie Hiramine

Masahiko Oomura

Takeshi Shibagaki

Provided is an infrared optical device that is easy to produce and has high performance. The infrared optical device having a peak at a center wavelength λ includes: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer, an active layer, a p-type semiconductor layer, and a first electrode layer formed on the semiconductor substrate in stated order. The first reflecting layer and the p-type semiconductor layer are directly connected to the active layer. The first reflecting layer is constructed through layering of a low-refractive-index layer that is an n-type semiconductor layer and a high-refractive-index layer. The low-refractive-index layer is placed closest to the active layer in the first reflecting layer. The active layer and the p-type semiconductor layer each have a higher refractive index than the low-refractive-index layer. The center wavelength λ is 7 μm or more at room temperature.

Infrared optical device

Disclosed is an infrared detecting device with a high SNR. The infrared detecting device includes a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light receiving layer formed on the first layer; and a second layer formed on the light receiving layer and having a second conductivity type. The first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<t≤2360×(y(1)−x(j))−240 (0.11≤y(1)−x(j)≤0.19), 0<t≤−1215×(y(1)−x(j))+427 (0.19<y(1)−x(j)≤0.33), and 0<x(j)<0.18.

Infrared detecting device

Provided is a high-performance infrared optical device including a reflecting layer structure that can be widely used in the mid-infrared region. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength λ comprises: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order, wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0≤Al+Ga≤0.5 and 0≤As≤1.0, and includes a plurality of layers that differ in impurity concentration, and the center wavelength λ is 2.5 μm or more at room temperature.

An infrared detecting device is provided. The infrared detecting device includes: a semiconductor substrate; a first layer having a first conductivity type on the semiconductor substrate; a light receiving layer on the first layer; and a second layer having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure. The second layer contains AlInSb (0.05<z<0.18). The side surfaces and an upper surface of the mesa structure are covered with the protective layer. A part of an upper surface of the second layer that forms an interface between the second layer and the protective layer has an oxide layer made of a constituent material of the second layer. The oxide layer includes an oxide of Al and has no oxide of Sb.

Disclosed is an infrared detecting device with a high SNR. The infrared detecting deviceincludes a semiconductor substrate; a first layerformed on the semiconductor substrate and having a first conductivity type; a light receiving layerformed on the first layer; and a second layerformed on the light receiving layer and having a second conductivity type. The first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<t≤2360×(y(1)−x(j))−240 (0.11≤y(1)−x(j)≤0.19), 0<t≤−1215×(y(1)−x(j))+427 (0.19<y(1)−x(j)≤0.33), and 0<x(j)<0.18.

Provided is an infrared detecting device with a high SNR. The infrared detecting device includes: a semiconductor substrate; a first layerhaving a first conductivity type on the semiconductor substrate; a light receiving layeron the first layer; and a second layerhaving a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure, the light receiving layer contains AlInSb (0.05&#x3c;x&#x3c;0.18), and at least a part of side surfaces of the mesa structure are covered with a protective layer, and part of the protective layer that is in contact with side surfaces of the light receiving layer is made of silicon nitride.

Obtaining control conditions through trial and error is inefficient. Provided is a learning processor including a control condition acquiring section that acquires control condition data indicating a control condition of a film deposition apparatus; a film characteristic acquiring section that acquires film characteristic data indicating a characteristic of a film deposited by the film deposition apparatus that has been caused to operate according to the control condition indicated by the control condition data; and a learning processing section that performs learning processing of a model that outputs recommended control condition data indicating the control condition of the film deposition apparatus that is recommended in response to input of target film characteristic data indicating a target film characteristic, using learning data that includes the acquired control condition data and film characteristic data.

Learning processor, learning processing method, production method of compound semiconductor, and recording medium

The purpose of the present invention is to provide a recipe creation device, with the goal of using past recipe data in order to highly efficiently create recipes. As an embodiment with which to achieve this goal, there is provided a recipe creation device comprising an arithmetic processing device that, on the basis of design data for a semiconductor element, establishes measurement conditions or inspection conditions by a semiconductor measurement device or a semiconductor inspection device, wherein the arithmetic processing device is configured to be able to access a database in which the measurement conditions or inspection conditions, and the pattern information of the semiconductor element, are stored in associated form, and the measurement conditions or inspection conditions are selected through a search using pattern information of the semiconductor element.

Recipe creation device for use in semiconductor measurement device or semiconductor inspection device

Provided is an infrared light emitting device with high emission intensity. The infrared light emitting device includes: a semiconductor substrate; a first compound semiconductor layer; a light emitting layer containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

Infrared light emitting device having light emitting layer containing Al, In, and Sb

Provided is an infrared detecting device with high SNR. The infrared detecting device includes: a semiconductor substrate; a first compound semiconductor layer; a light receiving layer formed on the first compound semiconductor layer and containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

Disclosed is an infrared light emitting device including: a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light emitting layer formed on the first layer; and a second layer formed on the light emitting layer and having a second conductivity type, wherein the first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0&#x3c;t&#x2264;2360&#xd7;(y(1)&#x2212;x(j))&#x2212;240 (0.11&#x2264;y(1)&#x2212;x(j)&#x2264;0.19), 0&#x3c;t&#x2264;&#x2212;1215&#xd7;(y(1)&#x2212;x(j))+427 (0.19&#x3c;y(1)&#x2212;x(j)&#x2264;0.33), and 0&#x3c;x(j)&#x3c;0.18.

Infrared light emitting device

A light emitting device including: a light emitting element; a molded resin portion configured to seal at least a portion of the light emitting element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light emitting element and the temperature information; and a controlling unit configured to control the light emitting element, based on the temperature information and the humidity information.

Light emitting device and light emitting and receiving device

A light receiving device including: a light receiving element configured to receive at least a portion of light incident from an outside and output an output signal corresponding to amount of received light; a molded resin portion configured to seal at least a portion of the light receiving element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light receiving element and the temperature information; and a compensating unit configured to compensate the output signal, based on the temperature information and the humidity information.

Light receiving device and light emitting and receiving device

The present invention relates to a magnetic sensor and a magnetic detecting method. A first arrangement pattern includes: a first magnetic detection unit () including a magnetic sensitivity material () and a magnetic convergence material () having a length different from a length of the magnetic sensitivity unit on a substrate, and being arranged to be parallel to the substrate and arranged horizontally so that a median line (Ma) passing through a midpoint of the magnetic sensitivity material in a longitudinal direction and a median line (Mb) of the magnetic convergence material in the longitudinal direction do not cross with each other; a second magnetic detection unit () having the structure same as the structure of the first magnetic detection unit; and a connecting unit electrically connecting the magnetic sensitivity material of the first magnetic detection unit in series with a magnetic sensitivity material of the second magnetic detection unit.

Magnetic sensor and magnetic detecting method of the same

The outputting of an output pulse produced in response to the inputting of a data pulse and a clock pulse to a D type flip-flop circuit is repeatedly simulated in a simulation process to extract a pulse time difference between the data pulse and the clock pulse as a timing verification checking value in a checking value extracting process on condition that the level of the output pulse becomes higher than a reference voltage until a simulation completion time and the pulse time difference is within a prescribed range. After the first simulation, an optimum simulation completion time, at which the levels of the data pulse, the clock pulse and the output pulse are respectively set to a constant high value, is determined to be place the optimum simulation completion time between a simulation start time and the simulation completion time, and the level of the output pulse is checked at the optimum simulation completion time in simulations following the first simulation. Therefore, a pulse time difference sufficiently made small can be rapidly and reliably extracted as a timing verification checking value.

Growing community of inventors

Tokyo, Japan

Hiromi Fujita