Hitachi, Ltd.

Fujitsu Corporation

Renesas Electronics Corporation

Tohoku University

Renesas Technology Corp.

Hitachi Ulsi Systems Co., Ltd.

Other

Centre National De La Recherche Scientifique

Hitachi Global Storage Technologies Netherlands B.v.

Hitachi Global Storage Technologies Japan, Ltd.

Université Paris Sud Xi

Université De Paris-sud Xi

Hiromasa Takahashi

Kenchi Ito

Riichiro Takemura

Takayuki Kawahara

Jun Hayakawa

Susumu Soeya

Hideyuki Iino

Masaki Yamada

Satoshi Yamato

Katsuro Watanabe

Susumu Ogawa

Kazuhiro Nakamoto

Takashi Kawabe

Reiko Arai

Hideo Ohno

Hiroyuki Hoshiya

Shoji Ikeda

Hisashi Kimura

Kenzo Kurotsuchi

Katsuya Miura

Yoshimi Iso

Chiaki Ishikawa

Shirun Ho

Sanato Nagata

Masahiko Ichimura

Masaki Komatsu

Kenta Kobayashi

Hidekazu Nagato

Nobuo Shibasaki

Kaori Totsuka

Tsutomu Ishii

Masayoshi Okawa

Mitsuo Hagiwara

Mitsuo Yotsutani

Masanao Yamaoka

Hiroyuki Yamamoto

Masahiko Ando

Nobuo Yoshida

Koichi Kuroiwa

Kazuo Ono

Mitsuharu Tai

Seiichi Suzuki

Yuko Tsuchiya

Yi Ge

Junichi Miyakoshi

Futoshi Furuta

Yuji Suwa

Hiroyuki Fujiyama

Norifumi Kameshiro

Yoshimasa Takebe

Shigeru Fujii

Shin Yabuuchi

Claude Chappert

Masahiro Yanagida

Naoto Fukatani

Sadamichi Maekawa

Saburo Takahashi

Thibaut Devolder

Kenji Shirasawa

Kazuyuki Kawauchi

Hitoshi Miyaoku

Paul Crozat

Ryoko Sugano

Osamu Tachibana

Thibault Devolder

Joo-von Kim

Hiroshi Imamura

Yoshifumi Miyaguchi

Joo-Von Kim

A hydrogen production apparatus including a photocatalyst and generating hydrogen from water includes a wavelength separation unit separating sunlight by wavelength, an infrared light conversion unit converting infrared light separated by the wavelength separation unit to visible light, and an ultraviolet light conversion unit converting ultraviolet light separated by the wavelength separation unit to visible light.

Hydrogen production apparatus

A computer includes a data generation unit and a storage unit which retains graph information for managing a graph configured from a plurality of vertexes and sides. The data generation unit performs acquiring a plurality of data and graph information and assuring storage regions in number equal to the number of vertexes, converting each data into an input value and setting at least one input value to a storage region corresponding to at least one vertex, executing an updating process for updating a value set to a storage region corresponding to a first vertex using the value set to the storage region corresponding to the first vertex and a value set to a storage region corresponding to a different vertex directly connected to the first vertex, and outputting a set of values set to the storage regions corresponding to the vertexes as the feature value.

Data generation method and computer system

A battery authentication system includes a battery pack, and a host device connected to the battery pack to charge the battery pack. The battery pack includes a battery, a discharge switch that turns on and off discharging of the battery, a charge switch that turns on and off charging of the battery, and a control integrated circuit (IC) that controls the battery. The control IC includes a charge/discharge control circuit that controls the discharge switch and the charge switch, and an authentication circuit that performs a process for performing an authentication with the host device. The authentication circuit is configured to perform a process associated with a first authentication. The charge/discharge control circuit is configured to control the discharge switch to be turned on when the first authentication is established. The authentication circuit is configured to perform a process associated with a second authentication.

Battery control IC, battery pack, and authentication method thereof

An object of the present invention is to provide an artificial olfactory sensing system capable of sniffing out various odors highly sensitively. The artificial olfactory sensing system includes: plural sensor cells on a lipid membrane of each of which olfactory receptors have developed; and plural ion-sensitive field-effect transistors (ISFETs) that correspondingly exist to the sensor cells on a one-on-one basis. A response signal showing that each of the olfactory receptors of each of the sensor cells has recognized an odor molecule is converted into an electric signal by an ISFET corresponding to each of the sensor cells.

Artificial olfactory sensing system

A battery control IC includes a voltage measurement unit that measures, in a normal current mode, a voltage value of each of a plurality of unit battery cells forming a battery pack, and measures, in a short-time large-current mode, a voltage value of a unit battery cell that has exhibited a lowest voltage value in the normal current mode, and a calculation unit that calculates an available power value of the battery pack in the short-time large-current mode based on a voltage value, measured in the short-time large-current mode, of the unit battery cell that has exhibited the lowest voltage value in the normal current mode.

Battery control IC and control method therefore

It is possible to limit the use of non-authentic battery packs. A battery control IC () includes an authentication circuit () and a charge/discharge control circuit (). The charge/discharge control circuit () controls charging and discharging of a battery (). The authentication circuit () performs a process for performing an authentication with a host device. The authentication circuit () is configured to perform a process associated with a first authentication in a common key system. The charge/discharge control circuit () is configured to perform a control to enable a discharge operation when the first authentication is established.

A magnetoresistive effect element uses a perpendicularly magnetized material and has a high TMR ratio. Intermediate layers composed of an element metal having a melting point of 1600&#xb0; C. or an alloy containing the metal on an outside of a structure consisting of a CoFeB layer, an MgO barrier layer, and a CoFeB layer. By inserting the intermediate layers, crystallization of the CoFeB layer during annealing is advanced from an MgO (001) crystal side, so that the CoFeB layer has a crystalline orientation in bcc (001).

Magnetoresistive effect element, magnetic memory cell using same, and random access memory

A vector processing circuit includes a vector register file including a plurality of array elements, a command issuance control circuit, and a plurality of pipeline arithmetic units. Each pipeline arithmetic unit performs arithmetic processing of data stored in the array elements indicated as a source by one command in parts through a plurality of cycles and stores the result in the array elements indicated as a destination by the one command through a plurality of cycles. When data word length of a preceding command is longer than that of a subsequent command, the command issuance control circuit changes data sizes of the array elements in accordance with data word length of the command and determines whether there is register interference between the array element to be processed at a non-head cycle of the preceding command, and the array element to be processed at a head cycle of the subsequent command.

Vector processing circuit, command issuance control method, and processor system

A relation between a drive current of a selection transistor of a magnetic memory and a threshold magnetization switching current of the magnetoresistance effect element is optimized. In order to optimize the relation between the drive current of the selection transistor and the threshold magnetization switching current of the magnetoresistance effect elementof the magnetic memory cell, a mechanism-for dropping the threshold magnetization switching current on '1' writing is provided that applies a magnetic field that is in the inverse direction of the pinned layer to the recording layer of the magnetoresistance effect element.

Magnetic memory cell and magnetic random access memory

Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film comprised of a ferromagnetic free layer, an insulation layer, and a ferromagnetic fixed layer is provided, and an MgO passivation layer is provided on the side walls of a protective layer and an orientation control layer, thus suppressing elemental diffusion of a tunnel magnetoresistance effect (TMR) element from each layer due to thermal processing at 350&#xb0; or higher and obtaining a magnetic memory cell and magnetic random access memory having stable, high-output reading and a low current writing characteristics. Furthermore, when CoFeB is used in the ferromagnetic layer and MgO is used in the insulation layer, it is preferable that the MgO passivation layer have an (001) orientation.

Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same

Provided are a spin-injection element having high spin-injection efficiency, and a magnetic field sensor and a magnetic recording memory employing the element. The element comprises a barrier layer, a magnetic conductive layer, and a spin accumulation portion comprised of non-magnetic conductive material. In the element, a first spin accumulation layer () and the barrier layer () have respectively a body-centered cubic lattice structure. Due to this, the first spin accumulation layer () and the barrier layer () come into contact with each other through a boundary face with improved crystalline symmetry. Thereby, lattice matching is improved and scattering of the tunnel electrons in the &#x394;1 band is prevented, resulting in improvement in the spin polarizability. Further, the characteristics of the device employing the spin injection element are improved.

Spin-injection element, and magnetic field sensor and magnetic recording memory employing the same

A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair.

Magnetic sensor, magnetic head, and magnetic memory by using spin Hall devices

Embodiments of the present invention provide an accumulation element with high resolving power and high output suitable for magnetic recording and reproducing at high recording density. According to one embodiment, a plurality of spin injection parts and are provided to increase the total amount of spin electrons. The spin accumulation element is composed of a non-magnetic conductor, a first magnetic conductor, a second magnetic conductor, and a third magnetic conductor, each of which are in contact with the non-magnetic conductor through the tunneling junction. An output voltage due to the spin accumulation effect is detected as a potential difference between the non-magnetic conductor and the third magnetic conductor. The first magnetic conductor of the first spin injection part is fixed by a first antiferromagnetic conductor and the second magnetic conductor of the second spin injection part is fixed by a second antiferromagnetic conductor so that their directions of magnetization are anti-parallel to each other.

Magnetic head and magnetic recording apparatus

To provide a magnetic head that is suited for high recording density magnetic read and write, and has little noise. A magnetic pinned layer is formed on a non-magnetic electrode layer via a first insulating layer, and a magnetic free layer is formed on a medium-side plane of the non-magnetic electrode layer via a second insulating layer. A circuit for flowing current between the non-magnetic electrode layer and the magnetic pinned layer via the first insulating layer, and a circuit for measuring voltage between the non-magnetic electrode layer and the magnetic free layer are connected to the magnetic free layer. The medium-side plane on which the magnetic free layer is formed may be a plane substantially parallel to the surface of the medium, or may be a plane tilted from the surface of the medium.

Magnetic read head having a non-magnetic electrode layer and a magnetic read write system

Growing community of inventors

Hachioji, Japan

Hiromasa Takahashi