Sandisk Technologies Inc.

Hiromasa Susuki

Masanori Tsutsumi

Seiji Shimabukuro

Kensuke Yamaguchi

Shigehisa Inoue

Yuji Fukano

Junji Oh

Youko Furihata

Ryoichi Ehara

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, the alternating stack containing a memory array region and a terrace region. Memory stack structures containing a memory film and a vertical semiconductor channel extend through the memory array region of the alternating stack. Support pillar structures extending through the terrace region of the alternating stack. The support pillar structures have different heights from each other.

Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof

Growing community of inventors

Yokkaichi, Japan

Hiromasa Susuki