Samsung Electronics Co., Ltd.

Hiromasa Shibuya

Yeong Suk Choi

Gae Hwang Lee

Hyesung Choi

Yong Wan Jin

Sung Young Yun

Dong-Seok Leem

Tadao Yagi

Rie Sakurai

Kwang Hee Lee

Xavier Bulliard

Taejin Choi

Katsunori Shibata

Ohkyu Kwon

Chul Baik

Yutaka Matsuo

Sungyoung Yun

Sangmo Kim

Seon-Jeong Lim

Youn Hee Lim

Jisoo Shin

Hyerim Hong

Tatsuya Imase

Kyung Bae Park

Moon Gyu Han

Norihito Ishii

Sung Jun Park

Chul Joon Heo

Takkyun Ro

Feifei Fang

Sang Mo Kim

Hye Rim Hong

Chui Joon Heo

Ji Soo Shin

Jong Won Choi

Younhee Lim

Hwijoung Seo

Tae Jin Choi

Hye Sung Choi

Choi Yeong Suk

A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor including a photosensitive layer on the substrate and arranged in parallel with the light emitting layer along an in-plane direction of the substrate such that the photosensor and the light emitting layer at least partially overlap in the in-plane direction, wherein the light emitting element and the photosensor further include separate, respective portions of a first common auxiliary layer disposed under each of the light emitting layer and the photosensitive layer and connected to each other to be a single piece of material extending continuously between the light emitting element and the photosensor, and the photosensitive layer includes a first semiconductor represented by Chemical Formula 1 and a second semiconductor not including any fullerenes and forming a pn junction with the first semiconductor.

Sensor embedded display panel and electronic device

A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Compound and photoelectric device, image sensor, and electronic device including the same

Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same. Definitions of Chemical Formula 1 are the same as defined in the detailed description.

Organic photoelectric device, image sensor, and electronic device

A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed:  In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Disclosed are an N-type semiconductor composition including fullerene or a fullerene derivative; and fullerene subunit derivative represented by Chemical Formula 1, and a thin film, an organic photoelectric device, an image sensor and an electronic device including the same.  In Chemical Formula 1, X, Cy and Rto Rare the same as defined in the detailed description.

N-type semiconductor composition, and thin film, organic photoelectric device, image sensor, and electronic device including the same

Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same.  In Chemical Formula 1, X, Ar, Rto R, a, b, and c are the same as defined in the detailed description.

Fullerene derivatives, and organic photoelectric device, image sensor, and electronic device including the same

Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the fullerene derivative. In Chemical Formula 1, X, Ar, and Rto Rare the same as defined in the detailed description.

Fullerene derivatives and photoelectric device and image sensor

Compound and photoelectric device, image sensor and electronic device including the same

Example embodiments provide a compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same.

Compound and organic photoelectric device, image sensor and electronic device including the same

A compound represented by Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed. In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:  In Chemical Formula 1, each substituent is the same as defined in the detailed description.

An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes an n-type semiconductor compound that is transparent in a visible ray region and represented by Chemical Formula 1, and a p-type semiconductor compound having a maximum absorption wavelength in a wavelength region of about 500 nm to about 600 nm of a visible ray region.

Organic photoelectric device and image sensor

A fullerene derivative may be included in photoelectric devices and image sensor. Optical absorption characteristics of a thin film including the fullerene derivative may be shifted toward a short wavelength compared with those of the thin film including the unsubstituted C60 fullerene, for example, a thin film including the fullerene derivative may be associated with a peak absorption wavelength (&#x3bb;) that is be shorter than that of a thin film including the unsubstituted C60 fullerene.

Fullerene derivatives and photoelectric devices and image sensors

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Seongnam-si, South Korea

Hiromasa Shibuya