Murata Manufacturing Co., Ltd.

Toyohashi University of Technology

Hiromasa Saeki

Noriyuki Inoue

Takeo Arakawa

Naoki Iwaji

Kazuo Hattori

Kensuke Aoki

Yasuo Fujii

Haruhiko Mori

Hiroshi Nakagawa

Akihiro Tsuru

Koichi Kanryo

Masaya Tamura

Junichi Yoshida

Ken Ito

Mika Takada

Suzuka Akai

A wireless power transmission system includes a structure surrounded as a whole by an electromagnetic wave-shielding member having an appropriate conductivity, at least one power transmission unit, and at least one power reception unit. A power reception unit includes a power receiver including a dielectric substrate, a rectifier circuit, and a power reception antenna. The power reception antenna includes power reception antenna lines in a same plane on the dielectric substrate. One ends of the power reception antenna lines are connected to the rectifier circuit, and other ends different from the one ends connected to the rectifier circuit are open ends. A planar shape of the dielectric substrate is a 2N-sided polygon with line symmetry (where N is an integer of two or more), and the power reception antenna lines are along N sides that are adjacent to and different from each other of the dielectric substrate.

Wireless power transmission system and power receiver

A wireless power transmission system includes a structure entirely surrounded by an electromagnetic wave shielding member having appropriate electrical conductivity and appropriate frequency selectivity; at least one power receiving unit; at least one power transmission unit; and at least one resonance frequency adjuster. The resonance frequency adjuster includes at least one conductive protrusion having an open end and a transmission line connected to another end of the conductive protrusion at one end of the transmission line, wherein the open end of the conductive protrusion is arranged inside the structure, and the transmission line is electrically connected to the electromagnetic wave shielding member defining a wall surface of the structure at another end not connected to the conductive protrusion.

Wireless power transmission system and resonance frequency adjustment unit for wireless power transmission system

A capacitor including a conductive metal base material having a porous part, a dielectric layer on the porous part, an upper electrode on the dielectric layer, and an oxide film on a surface of the conductive metal base material. The oxide film on the surface of the metal base material operates as an insulating layer between a lower electrode and an upper electrode, and the metal base material and the oxide film are preferably integrated so that separation of the insulating layer can be prevented, and a short circuit between the lower electrode and the upper electrode can be suppressed.

Capacitor having an oxide film on a surface of a conductive metal base material

A capacitor including a conductive porous base material having a plurality of pores, a dielectric layer on the conductive porous base material, an upper electrode on the dielectric layer, and an insulating material that extends into the plurality of pores.

Capacitor

A plurality of first and second capacitor parts and second capacitor parts are formed on opposed main surfaces of a foil shaped conductive substrate to sandwich the conductive substrate. The first and second capacitor parts are respectively coated with insulative protection layers. Terminal electrodes are respectively formed on main surfaces of the protection layers. The terminal electrodes and conductive parts of the first and second capacitor parts are respectively electrically connected via first via conductors and the terminal electrodes and the conductive substrateare electrically connected to second via conductors.

Thin film capacitor and electronic apparatus

A capacitor having a conductive porous substrate with at least two electrostatic capacitance forming sections, each of the at least two electrostatic capacitance forming sections including a porous portion of the conductive porous substrate, a dielectric layer on the porous portion, and an upper electrode on the dielectric layer. The at least two electrostatic capacitance forming sections are electrically connected in series by the conductive porous substrate.

A capacitor that includes a conductive base material with high specific surface area, a dielectric layer covering the conductive base material with high specific surface area, and an upper electrode covering the dielectric layer, in which the conductive base material with high specific surface area is formed of a metal sintered body as a whole.

Capacitor and method for manufacturing the same

A capacitor that includes a porous metal base material, a first buffer layer formed by an atomic layer deposition method on the porous metal base material, a dielectric layer formed by an atomic layer deposition method on the first buffer layer, and an upper electrode formed on the dielectric layer.

A capacitor that includes a conductive porous substrate having a porous portion; a dielectric layer on the porous portion and containing an oxygen element and at least metal element; and an upper electrode on the dielectric layer. The porous portion has a path integral value of 1 &#x3bc;m/&#x3bc;mto 16 &#x3bc;m/&#x3bc;m, and a porosity of 20% to 90%, and a ratio Z expressed by (1) below is 0.79 or more, where Oand Mrespectively represent signal intensities of the oxygen element and the metal element when the dielectric layer is analyzed by energy dispersive X-ray spectroscopy (EDS), and where Oand Mrespectively represent signal intensities of the oxygen element and the metal element when a reference material having stoichiometric composition of the oxygen element and the at least one metal element constituting the dielectric layer is analyzed by the EDS.

A capacitor that includes a conductive porous base material with a porous part; an upper electrode opposite the porous part, the upper electrode having, as its main constituent, a material selected from one of ruthenium, platinum, and an alloy of ruthenium and platinum; and a dielectric layer between the upper electrode and the conductive porous base material.

A capacitor that includes a porous metallic base material; a phosphorus-containing layer on the porous metallic base material; a dielectric layer on the phosphorus-containing layer; and an electrode on the dielectric layer.

A capacitor that includes a porous metal base material, a dielectric layer formed on the porous metal base material, an upper electrode formed on the dielectric layer, a first terminal electrode electrically connected to the porous metal base material, and a second terminal electrode electrically connected to the upper electrode. The porous metal base material includes a high-porosity part and low-porosity parts, and the low-porosity parts are present at a pair of opposed side surfaces of the porous metal base material.

A capacitor that includes a conductive porous base material; an electrode layer; a dielectric layer between the conductive porous base material and the electrode layer; and at least one silicon-containing layer between the dielectric layer and the electrode layer.

The following layers are deposited above the upper surface of a base substrate in this order with a lattice relaxation layer therebetween: a lower barrier layer made of AlGaN (0&#x3c;x&#x2266;0.20), a channel layer made of GaN, and an upper barrier layer made of AlGaN (0.15&#x2266;y&#x2266;0.30, where x&#x3c;y). A drain electrode, a source electrode, and an insulating layer are placed on the upper surface of the upper barrier layer. Furthermore, a gate electrode is placed in a position spaced with the insulating layer. A recessed structure is placed directly under the gate electrode. The channel layer includes an n-type doped second channel sub-layer and undoped first channel sub-layer deposited on the lower barrier layer in that order. The bottom of the recessed structure is within the heightwise range of the first channel sub-layer.

Growing community of inventors

Nagaokakyo, Japan

Hiromasa Saeki