Matsushita Electric Industrial Co., Ltd.

Hiromasa Funakoshi

Ryoji Asada

Toshiyuki Kawara

Hiroshi Tsutsui

Kazumasa Motoda

Yoshiyuki Yoshizumi

Takahiro Yamada

Takao Kuroda

Sueki Baba

Koichi Ohmori

Tetsuro Ohtsuchi

The present invention provides an imaging apparatus for converting a 24p imaging signal generated with a frame frequency of 24 Hz according to a progressive scanning system into asignal with a field frequency of 60 Hz by 2:3 pull-down processing according to an interlace scanning system which is a standard television system. The imaging apparatus prevents occurrence of a horizontal stripe and the like at the center of a screen and prevents degradation in picture quality. According to this inventive imaging apparatus, when the output timing of the 24p imaging signal from an imaging sectionis not equal to the phase of avertical synchronizing signal, the 24p imaging signal is inputted to a memory sectionafter being delayed by a delay sectionby a time during which thesignal is subjected to (&#xbd;) field scanning, and the 24p imaging signal is written in the memory sectionin synchronization with thevertical synchronizing signal.

Image pickup device

An imaging device uses a solid state imaging element, during multi-field accumulation to prevent shading and oscillatory phenomena such as repeated black and white patterns. A signal is supplied from a timing signal generation circuit to switches, and controls the ON/OFF operation. During the H period of the signal, the switch is closed, and the output value of an amplifier is input to a capacitor. During the L period of the signal, the switch is opened, and the average value of the output of the amplifier is maintained in the capacitor. During the H period, the switch is open, while during the L period, the switch is in the ON state. At this time, the level of the capacitor Cand the output of the amplifier are input to an amplifier, and their difference is amplified and supplied to a capacitor Cvia the switch.

Solid state imaging device having timing signal generation circuit and clamping circuit

A solid-state image sensing device comprising a photoelectric converter portion, a solid-state image sensor, and a controlling means. The photoelectric converter portion has a plurality of photoelectric converters arranged in two dimensions on a semiconductor substrate. The solid-state image sensor vertically transfers charges, transferred from the photoelectric converter portion, at separate times of first transfer and second transfer. Further, the photoelectric converter portion has a vertical transfer portion, in which first and fourth gates are provided for odd-numbered photoelectric converters, and second and third gates are provided for even-numbered photoelectric converters, and a horizontal transfer portion for horizontally transferring charges transferred from the vertical transfer portion. The controlling means supplies the vertical transfer portion with vertical transfer pulses and the horizontal transfer portion with horizontal transfer pulses. The controlling means transfers charges from the photoelectric converter portion to the vertical transfer portion such that the charges of odd-numbered pixels and the charges of even-numbered pixels are each transferred in a lump, respectively.

Solid state image sensing device

A charge transfer device has trapezoidal shape impurity-implanted regions (1, 51, . . . ) in n-type regions (271, 371) at least in the through-paths between a first HCCD (27) and a second HCCD (28), and its isolation regions (41) under the transfer gate (29) are trapezoidal shaped, and thereby charge transfer loss and hence FPN is minimized and the transfer efficiency is much improved.

Charge transfer device having a plurality of vertical and horizontal

In a charge detection device of a charge coupled device, an unnecessary overlap between a floating gate and other gates are reduced. A gate of a source follower amplifier is also formed in an active region. Further, the floating gate is connected to a gate of the source follower amplifier, and a bias gate and the floating gate overlap above a field oxide film. A bias gate voltage is controlled according to fluctuations of floating gate voltage. Thus, floating gate potential is kept constant.

Charge detection device and driver thereof

An electric charge detecting apparatus comprising vertical CCD, horizontal CCD and floating diffusion amplifier comprised of floating diffusion layer and source follower amplifier comprising a MOS transistor wherein a buffer electrode is arranged at one end of a gate electrode of the MOS transistor, the gate electrode is formed within an active region of the MOS transistor, a contact hole is provided for connecting a polysilicon layer arranged on a charge-voltage transformer and the source follow or plural P wells are formed and one of them is arranged under a wiring connecting the charge-voltage transformer and the source follower and connected to a source of a drive transistor. Said electric charge detecting apparatus further comprising, P.sup.+ region arranged under a field oxide film on which an output signal wiring from the source follower is electrically isolated from another P.sup.+ region or no P.sup.+ regions are provided under the field oxide film.

High sensitivity, broad band charge detecting apparatus with suppression

A radiation sensor for the measurement of photo energies of incident radiation is disclosed which comprises a semiconductor substrate sensitive to photons of the incident radiation, at least one common electrode and at least one split electrode, both of which are disposed on the same surface of the substrate, or the common electrode being disposed on one surface of the substrate and the split electrode being disposed on the other surface of the substrate at a diagonal position to the common electrode. Also disclosed is a radiation detecting apparatus using the above-mentioned radiation sensor.

Radiation sensor and a radiation detecting apparatus using the same

An X-ray image processing device using dual energy projection radiography method, wherein the low energy image and the high energy image are subjected to a subtraction processing to output a first image such as bone X-ray image, and the first image and the low energy image are subjected to another subtraction to output a second image such as a soft tissue X-ray image without deterioration of the X-ray image.

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Hirakata, Japan

Hiromasa Funakoshi