Sumitomo Electric Industries, Limited

Production Engineering Association

Sumitomo Electric Industries, Co.

Production Engineering Association of Shin-osaka

Production Engineering Assoc.

Hirokuni Nanba

Tsunemasa Taguchi

Yoshiki Kuhara

Koji Tada

Hiromi Iwamoto

Masayoshi Tatsumi

Isao Kidoguchi

The present invention provides an infrared laser optical element, in which a dense optical thin film with a low laser absorption and high moisture resistance is formed on the surface thereof, and a manufacturing method for the same. In this infrared laser optical element, the main surface of the optical substrate is smoothed, a BaF film formed on said main surface thereof and then a ZnSe film formed on said BaF film. The smoothing treatment for the main surface of the optical substrate is carried out by irradiating Xe gas ion beams. The BaF and the ZnSe films formed on said BaF film are formed on the main surface of the optical substrate, which has been smoothed, by Xe gas ion assisted vapor deposition. Superior performance can be achieved if the series of treatments are carried out under the specified conditions.

Infrared laser optical element and manufacturing method therefor

A method of forming a ZnSe single crystal. The method includes placing a piece of ZnSe polycrystal in a sealed reactor tube with its atmosphere formed of certain gases. The reactor tube is moved through different temperature zones to convert the polycrystal to a single crystal. The single crystal thus formed is cut to produce a single crystal chip or wafer. An impurity is then implanted in the chip or wafer. Lastly the chip or wafer is heated to diffuse the impurity throughout the chip or wafer.

Method for forming a doped ZnSe single crystal

A ZnSe thin film with good quality is homoepitaxially grown on a ZnSe single crystal substrate which is produced by the Recrystallization Traveling Heater Method.

Method for producing semiconductive single crystal

A n-type ZnSe thin layer is prepared by heating a ZnSe signal crystal substrate in a hydrogen atmosphere under a pressure of from 0.1 Torr. to 10 Torr. at a temperature of from 250.degree. C. to 450.degree. C. while supplying a gaseous organozinc compound, H.sub.2 Se gas and a gaseous organoaluminum compound in such amounts that a molar ratio of Se/Zn is from 10 to 100 and a molar ratio of Al/Zn is from 0.02 to 0.07 to grow the aluminum-doped ZnSe thin film on the ZnSe single crystal substrate.

A method for preparing single-crystal ZnSe comprising the steps of:

Method for preparing single-crystal ZnSe

A voltage and electric field measuring device using light as an operating parameter. An electro-optic crystal, a quarter-wave plate, and a polarization analyzer are arranged in that order in the direction of advancement of applied light. A voltage may be applied to the electro-optic crystal through electrodes arranged thereon. The electro-optic crystal belongs to a cubic system, such as bismuth silicon oxide or bismuth germanium oxide.

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Osaka, Japan

Hirokuni Nanba