University of California

Hirokuni Asamizu

Shuji Nakamura

Steven P DenBaars

Hitoshi Sato

Makoto Saito

Michael Iza

Kenji Iso

John F Kaeding

Hong Zhong

A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Transparent light emitting device with light emitting diodes

Filament LED light bulb

Transparent light emitting diodes

A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {101} GaN films deposited on {100} MgAlOspinel substrate miscut in the &#x3c;011&#x3e; direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Method for conductivity control of (Al,In,Ga,B)N

An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.

Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiency

Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency

Growing community of inventors

Goleta, CA, United States of America

Hirokuni Asamizu