Kioxia Corporation

Toshiba Memory Corporation

Hiroko Tahara

Naomi Fukumaki

Kenichi Ide

Takashi Shimizu

Takashi Fukushima

Masayuki Kitamura

Takashi Ohashi

Akitsugu Hatazaki

According to one embodiment, a semiconductor memory device includes: a plurality of first conductive layers that each include tungsten; a plurality of insulating films that include a stacked portion and a first projecting portion projecting; a semiconductor layer extending through an inside of a stacked body; a charge storage layer arranged between the plurality of first conductive layers and the semiconductor layer; a plurality of second conductive layers that are each arranged on the first projecting portion in such a manner as to be in contact with a single first conductive layer and that include silicon containing an impurity; and a plurality of contact plugs that are each provided on a single second conductive layer in such a manner as to be in contact with the single second conductive layer.

Semiconductor memory device

A semiconductor device according to an embodiment includes a stacked body including a plurality of conductive layers and a plurality of first insulation layers alternately stacked in a first direction. The conductive layers each include a first metal layer and a second metal layer. The first metal layer contains a first metal element and a substance that is chemically reactive with a material gas containing the first metal element. The second metal layer contains the first metal element and has a lower content of the substance than the first metal layer. The first metal layer is disposed between the first insulation layers and the second metal layer.

Semiconductor device and manufacturing method thereof

A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.

Semiconductor device having a stack body including metal films and first insulating films alternately stacked on a semiconductor substrate and including a stepped end portion and manufacturing method thereof

Growing community of inventors

Yokkaichi, Japan

Hiroko Tahara