Kabushiki Kaisha Toshiba

Fuji Xerox Co., Ltd.

Sony Corporation

Hiroko Nakamura

Shigeki Hattori

Koji Asakawa

Haruki Komano

Atsushi Hieno

Satoshi Mikoshiba

Kazuyoshi Sugihara

Soichi Inoue

Satoshi Tanaka

Hirohisa Miyamoto

Ko Yamada

Yuriko Seino

Mitsuhiro Oki

Masahiro Kanno

Toshiya Kotani

Shoji Mimotogi

Reiko Yoshimura

Tsukasa Azuma

Norikazu Osada

Katsuya Okumura

Haruo Okano

Yuichiro Yamazaki

Keiji Horioka

Motosuke Miyoshi

Yasunobu Onishi

Toru Watanabe

Ichiro Mori

Tadahiro Takigawa

Mitsuyo Kariya

Koji Hashimoto

Shinichi Ito

Takashi Sato

Yuichi Yamamoto

Masaru Suzuki

Ryota Kitagawa

Munehiro Ogasawara

Hisashi Kaneko

Kazuya Fukuhara

Tomohiro Saito

Tetsuo Matsuda

Hirokazu Kato

Yasushi Shinjo

Eishi Shiobara

Ryoichi Inanami

Daisuke Kawamura

Yoshiaki Shimooka

Takayuki Enomoto

Masaki Atsuta

Satoshi Masuda

Yoji Ogawa

Takaaki Kozuki

Akira Matsuura

Momoka Higa

A charged particle beam pattern forming device is described, a charged particle beam passing through a third aperture for forming a charged particle beam pattern, the charged particle beam pattern forming device including: a first element including a first aperture, a second element including a second aperture, the second aperture overlapping the first aperture, wherein the third aperture is defined by an overlap of the first aperture and the second aperture, and a shape of the third aperture is capable of being changed by a driver such that the first element is moved in a first direction and the second element is moved in a second direction opposite to the first direction.

Charged particle beam pattern forming device and charged particle beam apparatus

A molecular detection apparatus according to an arrangement includes: a collection unit collecting a detection target gas containing a molecule to be detected; a detector including a detection cell that has an organic probe provided in a sensor unit, the organic probe capturing the collected molecule, and a discriminator discriminating the molecule by a detection signal generated by the molecule being captured by the organic probe of the detection cell. The detection cell has the organic probe including a dicyanovinyl structure or a coumarin structure.

Molecular detection apparatus and molecular detection method

A molecular detection apparatusaccording to an embodiment includes: a collection unit collecting detection target gas containing molecules to be detected; a detector including a detection cell having an organic probe provided at a sensor unit, the organic probe capturing the collected molecule to be detected; and a discriminator discriminating the molecule to be detected by a detection signal generated by the molecule being captured by the organic probe. The detection cell has the organic probe containing a phosphonic acid structure or phosphoric acid structure.

Molecular detection apparatus, molecular detection method, and molecular detector

A molecular detection apparatus according to an embodiment includes a detector and a discriminator. The detector includes a plurality of detection cells, where the plurality of detection cells include at least an organic probe containing a cyano group or a nitro group as a neighboring group of a reactive group. The discriminator discriminates a substance to be detected by signal patterns of the plurality of detection cells.

Molecular detection apparatus, molecular detection method, and organic probe

A gas detection apparatus according to an embodiment includes: a collection unit collecting a detection target gas containing a gas molecule to be detected; a detector including a plurality of detection cells each including a sensor unit and an organic probe disposed at the sensor unit, the organic probe capturing the gas molecule collected by the collection unit; a discriminator discriminating the gas molecule by a signal pattern based on an intensity difference of detection signals generated with the gas molecule being captured by the organic probes of the plurality of detection cells; and a reactivation unit applying heat to the organic probe which has the captured gas molecule to be desorbed the gas molecule from the organic probe.

Gas detection apparatus

According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.

Method of forming pattern and laminate

According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.

Pattern forming method

According to one embodiment, a pattern formation method includes: forming a block copolymer layer containing a polystyrene derivative and an acrylic having 6 or more carbon atoms on a side chain in an opening of a resist layer provided on an underlayer and having the opening; forming a first layer containing the polystyrene derivative and a second layer containing the acrylic in the opening by phase-separating the block copolymer layer; and removing the second layer.

Pattern formation method and block copolymer

According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers.

Pattern formation method and guide pattern material

According to one embodiment, a pattern formation method is provided, the pattern formation includes: laminating a self-assembled monolayer and a polymer film on a substrate; causing chemical bonding between the polymer film and the self-assembled monolayer by irradiation with an energy beam to form a polymer surface layer on the self-assembled monolayer; and forming on the polymer surface layer a polymer alloy having a pattern of phase-separated structures.

Pattern formation method and polymer alloy base material

A substrate polishing method, a semiconductor device and a fabrication method for a semiconductor device are disclosed by which high planarization polishing can be achieved. In the substrate polishing method, two or more different slurries formed from ceria abrasive grains having different BET values from each other are used to carry out two or more stages of chemical-mechanical polishing processing of a polishing object oxide film on a substrate to flatten the polishing object film.

Substrate polishing method, semiconductor device and fabrication method therefor

According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.

Method of forming pattern

According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern.

A pattern forming method has forming a first resist film on a processed film, patterning the first resist film into a first resist pattern, forming a first film containing a photo acid generator so as to cover the first resist pattern, forming a second resist film so as to cover the first film, irradiating a predetermined region of the second resist film with exposure light, heating the first film and the second resist film, performing a development process, removing the second resist film of the predetermined region and forming a second resist pattern while the first film is left, and etching the processed film with the first resist pattern and the second resist pattern as a mask.

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Yokohama, Japan

Hiroko Nakamura