Matsushita Electric Industrial Co., Ltd.

Omron Corporation

Kyoto Daiichi Kagaku Co., Ltd.

Kurashiki Boseki Kabushiki Kaisha

Matsushita Electronics Corporation

Hiroko Kubo

Kenji Yoneda

Harumi Uenoyama

Hiromu Suganuma

Ryosuke Fujimura

Masahiko Niwayama

Asahi Matsui

Kexin Xu

Nobuyuki Takuma

Xu Kexin

Takeshi Sakura

Hiroaki Nakaoka

Yutaka Yamasaki

Emi Ashibe

Motonobu Shiomi

Norihiro Maekawa

Akio Kawaharada

Yoshio Mitsumura

Atsushi Ishinaga

A support device includes an interface configured to establish connection to a controller, the controller being configured to execute a user program including a function block, a storage unit configured to store a monitoring condition in which a data type of the function block and a name of a monitoring target variable are defined with the data type and the name associated with each other, and a search module configured to search for, among instances of function blocks created for the controller to execute the user program, an instance having a data type matching a data type defined in the monitoring condition and having a value of a monitoring target variable associated with the matching data type indicating a monitoring target event.

Support device monitoring function blocks of user program, non-transitory storage medium storing support program thereon, and control system

A control system includes a control device and a device that communicates with the control device. The control system includes a controller that periodically performs a control operation for controlling an object to be controlled, a communication processor that performs communication processing for periodically exchanging data with the device, a providing component that provides a development environment for performing a part of creation of contents of processing performed by the controller and for making of settings involved with communication processing by the communication processor, and a determination module that determines a settable range of a cycle time of exchange of data with the device based on contents set in the development environment.

Control system, support apparatus, and program for support apparatus

A support apparatus includes: an obtaining part, which obtains status information respectively from one or a plurality of safety devices network-connected with a control apparatus; a selecting part, which selects the safety device to which device identification information is to be newly set based on the status information of each safety device; and a setting part, which determines and sets corresponding device identification information in accordance with an instruction from a user based on network identification information set for the network to which each safety device belongs and a network address of each safety device.

Support apparatus, non-transitory computer readable recording medium and setting method

An information processing apparatus, information processing method, and computer readable storage medium are provided. An information processing apparatus () for generating a safety program for causing output devices to operate such that safety is maintained if a predetermined condition is satisfied includes: an acquisition unit acquiring an input/output setting () that correlates respective input devices with output devices that respond to changes in values of input signals from the input devices from a first input value that is an initial value to a second input value; and a generation unit generating, in a case in which a value of an input signal from any of the input devices defined in the input/output setting () has changed from the first input value to the second input value, a safety program for shifting an operation state of an output device correlated with the input device to a safety state.

Information processing apparatus, information processing method, and computer readable storage medium

A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.

Semiconductor device having an amorphous silicon-germanium gate electrode

A silicon oxynitride film is formed on a substrate. Then, a heat treatment is performed, while keeping a surface of the silicon oxynitride film in contact with a gas containing nitrogen, such as an NO gas, to introduce at least nitrogen into the silicon oxynitride film and produce a steeply sloped distribution of nitrogen. A semiconductor film containing an impurity, such as an amorphous silicon film, is formed on the silicon oxynitride film. By forming a CMOS device with, in particular, a dual gate structure which comprises p-type and n-type MIS transistors each having a gate oxide film composed of the silicon oxynitride film and a gate electrode composed of a polysilicon film, a high driving force is provided, while boron penetration in the p-type MIS transistor is suppressed.

Method of fabricating semiconductor device

Semiconductor device and method for fabricating the same

An impurity introducing apparatus of the present invention includes: a system for introducing an impurity having charges into a target to be processed, the target being a semiconductor substrate or a film formed on the substrate; a system for supplying electrons into the target, the electrons canceling the charges of the impurity; and a system for controlling the maximum energy of the electrons supplied by the electron supply system at a predetermined value or less.

Apparatus and method for introducing impurity

A method for introducing an impurity includes the steps of: introducing an impurity having charges into a target to be processed, such as a semiconductor substrate and a film formed on a substrate; and supplying electrons from a filament into the target to neutralize the charges of the impurity. The step of supplying electrons includes a step of controlling the maximum energy of the electrons supplied at a predetermined energy or less.

Method for introducing impurity into a semiconductor substrate without negative charge buildup phenomenon

Method and apparatus for measuring concentration by light projection

A urinal is provided on its forward end with a cell, which internally communicates with the urinal to outwardly project from the same. A measuring part comprises a light source part for applying a measuring beam of the visible or near infrared wavelength region to the cell which is set in a cell setting part and a light receiving part for receiving and detecting the measuring beam transmitted through the cell, and measures absorbances of uric components to be measured at wavelengths selected therefor respectively. A sensor part is adapted to detect that the cell is set in the cell setting part, so that the measuring part starts a measuring operation on the basis of a signal indicating that the sensor detects the cell. It is possible to carry out a urine test on a person who lies on bed.

Method of and apparatus for measuring uric components

A measuring beam is incident upon a triangular cell storing a liquid sample, and transmitted light thereof is received by a linear sensor so that both transmitted light intensity and a position of the beam are detected. A refractive index calculating part calculates refractive indices from the position detected by the linear sensor, while an absorbance calculating part calculates absorbance values dependent on component concentration values correcting influence by transmittance change at the triangular cell through the transmitted light intensity values and the refractive indices of the sample calculated at the refractive index calculating part. A component concentration calculating part performs a multivariate analytical operation on the basis of the absorbance values dependent on the component concentration values at a plurality of measuring wavelengths calculated at the absorbance calculating part.

Method of and apparatus for measuring absorbance, component

A method of quantitative analysis of a specific component of an object to be measured comprises steps of measuring an energy spectrum of light transmitted through or reflected from the object, dividing the energy spectrum into a plurality of wavelength domains, thereby obtaining a plurality of partial energy spectra, normalizing the plurality of partial energy spectra within each wavelength domain using an energy measured at a predetermined wavelength contained in each wavelength domain, and performing the quantative analysis by multivariate analysis using the plurality of partial energy spectra having been normalized.

Growing community of inventors

Kyoto, Japan

Hiroko Kubo