Sanken Electric Co., Ltd.

Hiroko Kawaguchi

Hiromichi Kumakura

Hiroshi Shikauchi

Yuki Tanaka

Tomonori Hotate

Toru Yoshie

Ryohei Baba

Satoru Washiya

Shinji Kudoh

Shuichi Okubo

A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes a first semiconductor region having a first conductivity type; and a second semiconductor region having a second conductivity type. The first semiconductor region is configured within the second semiconductor region and a plurality of crystal defects are formed in the second semiconductor region and at least part of the first semiconductor region is surrounded by the plurality of crystal defects. Therefore, recombination of charge carriers (electrons and holes) on a lateral direction and a longitudinal direction could be taken into account, and the switching time of the semiconductor device could be adequately decreased.

Semiconductor device and method for forming the semiconductor device

Provided is a highly reliable semiconductor device that uses a thick passivation layer. The protective film is formed so as to cover mostly the entire surface of a semiconductor substrate, and is open only in an area of part that is above a metal wiring layer (connection area). The passivation layer includes starting from the bottom side, a first silicon nitride film that includes silicon nitride (SiN), a silicon oxide film that includes silicon oxide (SiO), and an organic film (organic layer) that includes a polyimide. The silicon oxide film and organic film are formed so as to cover the electrode layer (metal wiring layer) except the top of the insulation layer and the connection area, however, the first silicon nitride film is formed only on the insulation layer and not formed on the electrode layer.

Semiconductor device

A semiconductor device includes a semiconductor base body having a first main surface and a second main surface, the first main surface and the second main surface being opposite with each other; a Schottky electrode that is disposed on the first main surface and forms a Schottky junction with the semiconductor base body; and a barrier metal layer that is brought into ohmic contact with the first main surface around the Schottky electrode and covers a side surface of the Schottky electrode.

A semiconductor device includes an n-type semiconductor substrate, which has a main surface having an element region and an outer peripheral region surrounding the element region; a p-type guard ring, which includes: a lowly-doped p-type region disposed on an upper surface of the semiconductor substrate in the outer peripheral region surrounding the element region; and a highly-doped p-type region disposed on an inner side of the lowly-doped p-type region and having an impurity concentration higher than an impurity concentration of the lowly-doped p-type region, wherein a side surface and a bottom surface of the highly-doped p-type region are covered by the lowly-doped p-type region such that the highly-doped p-type region is not in contact with the n-type region; and an ohmic junction electrode, which forms an ohmic junction with the highly-doped p-type region.

A semiconductor device having a main electrode connected to a first semiconductor region and a second semiconductor layer on a semiconductor substrate so that a pn-junction diode is formed with the first semiconductor region being interposed and a Schottky barrier diode is formed with the second semiconductor layer being interposed on a surface of the semiconductor substrate, the semiconductor device includes a first electrode configured to ohmic-contact the first semiconductor region; a second electrode configured to Schottky-contact the second semiconductor layer and not having a portion directly contacting the first electrode; and a conductive reaction suppression layer to suppress a reaction between a material configuring the first electrode and a material configuring the second electrode are provided on the surface of the semiconductor substrate, and the main electrode is electrically connected to the first electrode and the second electrode.

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Niiza, Japan

Hiroko Kawaguchi