Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Hiroko Itokazu

Tomoko Matsudai

Yoko Iwakaji

Keiko Kawamura

Takako Motai

Takeshi Suwa

Kaori Fuse

Yusuke Kawaguchi

Norio Yasuhara

Kenichi Matsushita

Kohei Oasa

Shoko Hanagata

Daiki Yoshikawa

A semiconductor device of embodiments includes: a semiconductor layer having a first face and a second face opposite to the first face and including a first trench, a second trench, and a third trench provided on a first face side; a first gate electrode in the first trench; a second gate electrode in the second trench; a third gate electrode in the third trench; a fourth gate electrode and a fifth gate electrode provided on a second face side; a first electrode contacting the first face; a second electrode contacting the second face; a first electrode pad electrically connected to the first gate electrode; a second electrode pad electrically connected to the second gate electrode; a third electrode pad electrically connected to the third gate electrode; a fourth electrode pad electrically connected to the fourth gate electrode; and a fifth electrode pad electrically connected to the fifth gate electrode.

Semiconductor device and semiconductor circuit

A semiconductor device includes a semiconductor part, first and second electrodes. The semiconductor part includes first to third layers. The first electrode is provided on a back surface of the semiconductor part. The second electrode is provided on a front surface of the semiconductor part. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The third layer of the second conductivity type is provided between the second layer and the second electrode. The second electrode includes a buried contact portion and a surface contact portion. The buried contact portion extends into the second layer from the front surface of the semiconductor part and contacts the second layer. The surface contact portion contacts the third layer at the front surface of the semiconductor part.

Semiconductor device

A semiconductor device includes first and second semiconductor layers of a first conductivity type, a third semiconductor layer of a second conductivity type, a plurality of electrodes, and a first insulating film. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer with a first surface at a side opposite to the first semiconductor layer. The electrodes extend from the first surface into the second semiconductor layer. A first insulating film provided between the second and third semiconductor layers and each of electrodes. The electrodes include first and second electrode groups. The first electrode group is arranged in one column in the first direction and apart from each other by a first distance. The first and second electrode groups are apart from each other by a second distance in the second direction.

A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.

A semiconductor device of embodiments includes: a semiconductor layer including a first trench, a second trench, a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type provided between a first face and the first semiconductor region, between the first trench and the second trench, and in contact with the second trench, a third semiconductor region of a first conductive type provided between the first trench and the second semiconductor region, a fourth semiconductor region of a second conductive type provided between the third semiconductor region and the first face, and a fifth semiconductor region of a second conductive type provided between the second semiconductor region and the first face, spaced from the fourth semiconductor region, in contact with the second trench; a first electrode on a first face side; and a second electrode on a second face side.

A semiconductor device includes a semiconductor part, a first electrode and control electrodes at the front side of the semiconductor part. The semiconductor part includes first to fourth layers, first and third layers being of a first conductivity type, second and fourth layers being of a second conductivity type. The control electrodes are provided in a plurality of trenches, respectively. The control electrodes include a first control electrode, and a second control electrode next to the first control electrode. The second layer is provided between the first layer and the first electrode. The third and fourth layers are provided between the second layer and the first electrode. The semiconductor part further includes a first region partially provided between the first and second layers. The first region is provided between the first and third layers, the first region including a material having a lower thermal conductivity than the first layer.

A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The semiconductor part includes first and third layers of a first conductivity type, and second, fourth and fifth layers of a second conductivity type. The first layer extends between the first and second electrodes. The second layer is provided between the first layer and the second electrode. The third semiconductor layer is provided between the second layer and the second electrode. The fourth layer is provided between the first layer and the first electrode. The semiconductor part includes an active region and a termination region. The active region includes the control electrode, the second layer, and the third layer. The termination region surrounds the active region. The fifth layer is provided in the first layer in the termination region.

This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.

A semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, a first gate electrode, and a second gate electrode. The first gate electrode faces the second semiconductor region via a first insulating film. The second gate electrode faces the second semiconductor region via a second insulating film and faces the second electrode via a third insulating film contacting the second insulating film. The fifth semiconductor region includes a boundary portion that electrically contacts the second electrode. A distance between an upper surface of the fourth semiconductor region and the first electrode is greater than a distance between the boundary portion and the first electrode.

Semiconductor device and method for controlling semiconductor device

A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.

A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The semiconductor part includes first to seventh layers. The second of a second conductivity type is provided between the first layer of a first conductivity type and the first electrode. The third and fourth layers of the first conductivity type are arranged along the second layer between the second layer and the first electrode. The fifth layer of the second conductivity type is provided between the second electrode and the first layer. The sixth and seventh layers are arranged along the fifth layer between the first and fifth layers. The sixth and seventh layers include the first-conductivity-type impurities with first and second surface densities, respectively. The first surface density is greater than the second surface density.

A semiconductor element includes a semiconductor part, first to third electrodes and a control electrode. The first electrode is provided at a front side of the semiconductor part. The second and third electrodes are provided at a back side of the semiconductor part. The control electrode is provided between the semiconductor part and the first electrode. The semiconductor part includes first and third layers of a first conductivity type and second and fourth layers of a second conductivity type. The first layer is provided between the first and second electrodes and between the first and third electrodes. The first layer is connected to the third electrode at the back side. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the second electrode and the first layer.

Growing community of inventors

Kawasaki Kanagawa, Japan

Hiroko Itokazu