Kabushiki Kaisha Toyota Chuo Kenkyusho

Hiroko Iguchi

Teruhisa Akashi

Hirofumi Funabashi

Hidehito Matsuo

Shigeo Hori

Toshihiko Tani

Tetsuo Narita

A group III nitride semiconductor substrate may include: a p-type conduction region into which a group II element has been implanted in a depth direction of the group III nitride semiconductor substrate from a surface of the group III nitride semiconductor substrate, the p-type conduction region having p-type conductivity, wherein hydrogen has been implanted from the p-type conduction region across an n-type conduction region adjacent to the p-type conduction region in the depth direction of the group III nitride semiconductor substrate.

Group III nitride semiconductor substrate

A solid oxide fuel cell is disclosed herein. The fuel cell includes a silicon substrate, an electrolyte film laminated on the silicon substrate, and a gas flow path formed inside the silicon substrate. The electrolyte film is opposed to the gas flow path via an electrode film. A portion of a side wall of the gas flow path has a fillet shape, and the portion is close to the electrolyte film.

Fuel cell

A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.

Solid oxide fuel cell

A fuel cell disclosed herein may comprise: a substrate provided with a recess through which fuel gas passes; an electrolyte membrane covering an opening of the recess; an insulating film covering one surface of the electrolyte membrane and having a through hole reaching the electrolyte membrane; a first electrode in contact with the one surface of the electrolyte membrane in the through hole; a second electrode in contact with the other surface of the electrolyte membrane; and a heater disposed in the insulating film at a position adjacent to the through hole.

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Nagakute, Japan

Hiroko Iguchi