National Institute of Advanced Industrial Science and Technology

Hiroko Arai

Shinji Yuasa

Hiroshi Imamura

Rie Matsumoto

Some embodiments are directed to a non-collinear magnetoresistive device, including a free layer; a fixed layer; and a non-magnetic layer disposed between the free layer and the fixed layer, wherein the fixed layer has an easy magnetization direction in an in-plane direction or in a perpendicular direction, the free layer satisfies at room temperature expressions (1) and (2) below:&#x2265;1.66&#xd7;10&#x2003;&#x2003;(1)&#x2264;5&#xd7;10nm&#x2003;&#x2003;(2)where E=(K+K+K/4K)&#xd7;V, K: an effective first-order anisotropy constant, K: a second-order anisotropy constant, and V: a volume, and wherein the free layer is in a cone magnetization state.

Non-collinear magnetoresistive device

Some embodiments are directed to a magnetoresistive device, including a free layer having an easy magnetization direction in a perpendicular direction or in an in-plane direction; a fixed layer having the easy magnetization direction which is in the perpendicular direction when the easy magnetization direction of the free layer is in the perpendicular direction or in the in-plane direction when the easy magnetization direction of the free layer is in the in-plane direction; and a non-magnetic layer disposed between the free layer and the fixed layer.

Growing community of inventors

Tsukuba, Japan

Hiroko Arai