Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Hiroki Watanabe

Yasuo Kitou

Yukihiko Watanabe

Masahiro Sugimoto

Narumasa Soejima

Hidefumi Takaya

Tsuyoshi Ishikawa

Kensaku Yamamoto

Eiichi Okuno

Masami Naito

Shinichiro Miyahara

Shinya Hoshi

Hiroyuki Kondo

Satoru Sasaki

Shoichi Onda

Junji Asano

Yasushi Furukawa

Naoki Toda

Masanori Nagaya

A component assembly jig is a jig for assembling an assembly component to a target component using a plurality of bolts. The component assembly jig includes a jig body that temporarily holds the assembly component, and a plurality of positioning guides that position a plurality of bolt through-holes of the assembly component in a plurality of screw holes of a target component. According to the above configuration, the plurality of bolt through-holes can be positioned in the plurality of screw holes using the plurality of positioning guides. Thus, the assembly component can be easily assembled to the target component with the plurality of bolts regardless of whether the working environment is good or bad.

Component assembly jig and component assembly method

A silicon carbide single crystal includes a spiral dislocation. The spiral dislocation includes a L dislocation having a burgers vector defined as b, which satisfies an equation of b&#x3e;&#x3c;0001&#x3e;+1/3&#x3c;11-20&#x3e;. The L dislocation has a density equal to or lower than 300 dislocations/cm, preferably, 100 dislocations/cm, since the L dislocation has large distortion and causes generation of leakage current. Thus, the silicon carbide single crystal with high quality is suitable for a device production which can suppress the leakage current.

Silicon carbide single crystal and method for producing silicon carbide single crystal

In a method of manufacturing a silicon carbide single crystal, a silicon carbide substrate having a surface of one of a (-) plane and a (-) plane, where n is any integer number greater than or equal to 0, is prepared. An epitaxial layer having a predetermined impurity concentration is grown on the one of the (-) plane and the (-) plane of the silicon carbide substrate by a chemical vapor deposition method so that a threading dislocation is discharged from a side surface of the epitaxial layer. A silicon carbide single crystal is grown into a bulk shape by a sublimation method on the one of the (-) plane and the (-) plane of the epitaxial layer from which the threading dislocation is discharged.

Method of manufacturing silicon carbide single crystal

A fuel injection control system for an internal combustion engine is provided which is designed to perform pilot injection of fuel into the engine through a fuel injector prior to main injection. The system monitors a combustion state parameter representing a combustion state of the fuel within a combustion chamber of the engine which has been sprayed in the event of the pilot injection. When the combustion state parameter is determined as lying out of a stable combustion range where the fuel is to burn stably, the system changes the number of pilot injections to be executed prior to the main injection and/or the quantity of the fuel to be sprayed in each pilot injection, thereby enhancing the ignitability of the fuel in the pilot injection.

Fuel injection control system for internal combustion engine

A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.

Silicon carbide semiconductor device

A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.

Manufacturing method of silicon carbide single crystal

A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved.

SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device

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Tokai, Japan

Hiroki Watanabe