Screen Holdings Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Hiroki Tsujikawa

Atsuyasu Miura

Kazuhiro Fujita

Yuya Tsuchihashi

Kenji Kobayashi

Sei Negoro

Koichi Okamoto

Masahide Ikeda

Takashi Izuta

Hajime Nishide

Katsuhiro Fukui

Takatoshi Hayashi

Masanobu Sato

Akio Hashizume

Hiroaki Sugimoto

Kazuo Nakajima

Masato Tanaka

Tsuyoshi Okumura

Keiji Iwata

Akihiko Taki

Takashi Akiyama

Naoki Sawazaki

Shotaro Tsuda

Seiji Ano

Makoto Takaoka

Nobuyuki Miyaji

Kenji Takemoto

A chemical liquid preparation method of preparing a TMAH-containing chemical liquid, including, a correspondence relationship preparing step of preparing a correspondence relationship between a supply flow rate ratio between an oxygen-containing gas and an inert-gas-containing gas and a convergent dissolved oxygen concentration in the TMAH-containing chemical liquid that is converged to when the oxygen-containing gas and the inert-gas-containing gas are supplied into the TMAH-containing chemical liquid; a concentration setting step of setting a target dissolved oxygen concentration in the TMAH-containing chemical liquid; a supply-flow-rate-ratio acquiring step of acquiring the supply flow rate ratio between the oxygen-containing gas and the inert-gas-containing gas corresponding to the target dissolved oxygen concentration in accordance with the correspondence relationship prepared in the correspondence relationship preparing step; and a gas supplying step of supplying the oxygen-containing gas and the inert-gas-containing gas with the supply flow rate ratio acquired in the supply-flow-rate-ratio acquiring step.

Chemical liquid preparation device, and substrate processing device

A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

A substrate processing method includes a liquid discharging step of discharging liquid through a nozzle toward a predetermined supply region on the main surface of a substrate held on a substrate holding unit within a chamber, a humidified gas supplying step of supplying humidified gas with a humidity higher than the humidity within the chamber onto the main surface of the substrate to remove electrical charges carried on the substrate, and a spin-drying step of rotating the substrate about a predetermined rotational axis after the liquid discharging step to spin off the liquid component from the main surface of the substrate. The humidified gas supplying step is started before the start of the liquid discharging step and ended at a predetermined termination timing after the start of the liquid discharging step and before the spin-drying step.

Substrate processing method and substrate processing device

Chemical liquid preparation method, chemical liquid preparation device, and substrate processing device

A substrate processing method includes a chemical liquid supplying step of supplying a chemical liquid to a substrate, an elapsed period measuring step of measuring an after-the-end elapsed period, a recovery step of controlling the switching unit to be in a recovery guiding state, when, at a start of the chemical liquid supplying step, the after-the-end elapsed period is less than a predetermined first period, and a draining step of controlling the switching unit to be in a drain guiding state, in which the liquid led to the recovery space is led to the drain line, when, at the start of the chemical liquid supplying step, the after-the-end elapsed period is not less than the predetermined first period and then switching to the recovery guiding state based on establishment of a predetermined draining ending condition.

Substrate processing method and substrate processing apparatus

A substrate processing apparatus includes a guard that catches liquid scattered outward from a spin chuck, a cup defining a liquid receiving groove to catch liquid that is guided downward by the guard, a guard elevating/lowering unit that moves the guard in an up/down direction, a cleaning liquid supplying unit that supplies cleaning liquid, discharged from a cleaning liquid nozzle, to the liquid receiving groove via the spin chuck and the guard, a cleaning liquid draining unit that drains the cleaning liquid in the liquid receiving groove, and a controller that controls the cleaning liquid supplying unit and the cleaning liquid draining unit to accumulate cleaning liquid in the liquid receiving groove and controls the guard elevating/lowering unit to cause a lower end portion of the cylindrical portion to be immersed in the cleaning liquid in the liquid receiving groove.

Substrate processing apparatus and processing cup cleaning method

A recover piping cleaning method is a method of cleaning a recovery piping into which a chemical liquid used for processing of a substrate is led via a processing cup, the recovery piping being arranged to lead the led chemical liquid into a predetermined chemical liquid recovery piping, the method including a piping cleaning step of cleaning the interior of the recovery piping by using a cleaning liquid by, while supplying the cleaning liquid to the recovery piping, leading the liquid led into the recovery piping into a drain piping which is different from the chemical liquid recovery piping, and a cleaning chemical liquid supplying step of, supplying the cleaning chemical liquid from a cleaning chemical liquid supply piping connected to the recovery piping to the recovery piping while leading the liquid led into the recovery piping into the drain piping.

Recovery piping cleaning method and substrate processing apparatus

The controller of a substrate processing apparatus carries out a liquid column forming step in which cleaning liquid is discharged through a lower surface nozzle when a spin chuck is not holding a substrate, to form a liquid column extending upward from the lower surface nozzle, and, in parallel with the liquid column forming step, a first dropping portion cleaning step in which an upper surface nozzle is reciprocated horizontally between a first position where a dropping portion of the upper surface nozzle does not contact the liquid column and a second position where the dropping portion of the upper surface nozzle does not contact the liquid column, so as to cause the upper surface nozzle to pass through a first middle position where the upper discharge port of the upper surface nozzle overlaps with the liquid column in a plan view.

Substrate processing apparatus and nozzle cleaning method

A substrate treatment method is used for removing a resist from a front surface of a substrate. A substrate treatment apparatus includes a substrate holding unit which holds the substrate, and a sulfuric acid ozone/water mixture supplying unit which supplies a sulfuric acid ozone/water mixture to the front surface of the substrate held by the substrate holding unit, the sulfuric acid ozone/water mixture being a mixture which is prepared by a method including mixing water with sulfuric acid ozone prepared by dissolving ozone gas in sulfuric acid.

Substrate treatment apparatus and substrate treatment method

A substrate processing method is a substrate processing method which applies sequentially common etching processing which is common to each of a plurality of substrates. The common etching processing has an etching step and a high-temperature liquid discharge step. The substrate processing method further includes a piping heating step in which, of the plurality of common etching processings applied to the plurality of substrates, before the initial common etching processing, the pipe wall of the common piping is raised in temperature up to a predetermined second liquid temperature higher than a first liquid temperature and in each of the common etching processings, after each of high-temperature liquid discharge steps and before each of next etching steps, there is not performed a step in which the pipe wall of the common piping is lowered in temperature.

A soft spray nozzle discharging a cleaning mist is vertically directed and fixed to an arm. A rinse nozzle discharging rinsing deionized water for suppressing obstruction is vertically fixed to the arm at a prescribed distance from the soft spray nozzle. During cleaning, it follows that both nozzles discharge detergents while keeping relative layout relation. Therefore, the discharged cleaning mist and rinsing deionized water do not interfere with each other before reaching the substrate but the used detergents are entirely horizontally splashed and recovered in a cup. Thus, the cleaning mist is prevented from scattering and adhering to the periphery.

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Kyoto, Japan

Hiroki Tsujikawa