Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Riken Corporation

Hiroki Tojinbara

Ryoto Yoshita

Yoichi Ueda

Rena Suzuki

Takahiro Kawamura

Takaki Hatsui

A light-receiving element according to an embodiment of the present disclosure includes: a semiconductor substrate () including a photoelectric conversion region; a first electrically-conductive region (A) provided at an interface of one surface of the semiconductor substrate () and coupled to a first electrode (); a second first electrically-conductive region (B) provided at the interface of the one surface and around the first electrically-conductive region (A) and coupled to a second electrode (); and a third first electrically-conductive region (C) provided at the interface of the one surface and around the second first electrically-conductive region (B) and being in an electrically floating state.

Light-receiving element, x-ray imaging element, and electronic apparatus

Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Solid-state imaging device, method of manufacturing a solid-state imaging device, and electronic apparatus

An imaging device including: a first semiconductor substrate; a second semiconductor substrate; and a wiring layer. The first semiconductor substrate has a first surface and a second surface and includes a sensor pixel. The second semiconductor substrate has a third surface and a fourth surface and includes a readout circuit that outputs a pixel signal based on an output from the sensor pixel. The second semiconductor substrate is stacked on the first semiconductor substrate with the first surface and the fourth surface opposed to each other. The wiring layer is between the first semiconductor substrate and the second semiconductor substrate and includes a first wiring line and a second wiring line that are electrically coupled to each other. One of the first wiring line and the second wiring line is in an electrically floating state while the other is electrically coupled to a transistor.

Imaging device and electronic apparatus

Growing community of inventors

Kanagawa, Japan

Hiroki Tojinbara