Horiba, Ltd.

Hiroki Tanabe

Tsuyoshi Nakanishi

Katsuhiko Tomita

Susumu Mimura

Kazuaki Sawada

Koji Tominaga

Koji Ueda

Toshihiko Uno

Akio Maeno

Satoshi Nomura

Yuri Aono

Syuji Takamatsu

Mitsuru Honjo

An inexpensive, high-performance pH sensor measure the surface of a solid substance in a simple manner, comprising an ion sensing partwhich responds to pH, a reference electrodea gel-form ion permeable substancewhich has a predetermined pH value and covers the ion sensing partand reference electrodeand a cover memberwhich houses the ion permeable substanceand has an openingformed at a position near the abovementioned ion sensing part

pH sensor

PH electrode

A detector assembly for detecting a plurality of different properties at the same location at the same time is provided by integrating onto a single semiconductor substrate a first detector unit for measuring a first property and a second detector unit for measuring a second property. The first and second detector units can share, for example, a common element, such as a sensor device that can provide electrical output signals representative of, respectively, the first property and the second property. The common element can include a diaphragm with a pyroelectric element to provide a measurement of temperature and pressure.

Multiple detecting apparatus for physical phenomenon and/or chemical phenomenon

Method and equipment easily visualize various physical phenomena or chemical phenomena by simultaneously taking in, accumulating, and transferring data at a plurality of points. Electric charge is injected in potential wells constructed to vary the depth in accord with the magnitude of the physical or chemical quantity, and the physical or chemical quantity is converted into electric charge according to the depth of the potential wells.

Apparatus for measuring physical and chemical phenomena

A pH sensor having an ISFET is provided on a crystalline substrate of silicon with a thin film of aluminum oxide formed to have epitaxial growth with an overlaying thin film of silicon epitaxial grown on the aluminum oxide layer. A source element and a drain element are provided on the silicon film, and a pH responsive film layer is connected to the source and drain. The pH sensor can be accompanied with appropriate circuitry also integrally formed on the same epitaxial SOI substrate.

Semiconductor PH sensor and circuit and method of making same

Growing community of inventors

Kyoto, Japan

Hiroki Tanabe