Rohm Co., Ltd.

Kyoto University

National Institute of Radiological Sciences

National Institutes for Quantum and Radiological Science and Technology

Hiroki Takeuchi

Shun Momose

Haruhisa Inoue

Tetsuya Suhara

Makoto Higuchi

Ryosuke Takahashi

Bin Ji

Mikiya Doi

An overcurrent detection circuit, which detects overcurrent of a load driving device arranged to drive a capacitance load by switching a voltage applied to the capacitance load between high level and low level, includes a clock signal generation unit arranged to generate a clock signal, a comparing unit arranged to compare a physical quantity corresponding to current supplied from the load driving device to the capacitance load with a predetermined value, and a determination unit arranged to determine whether or not the load driving device is in an overcurrent state based on the clock signal and a result of the comparison by the comparing unit, during a period in which the load driving device applies a high level voltage to the capacitance load.

Overcurrent detection circuit

A microchip including a fluid circuit therein and a specimen inlet for introducing a specimen containing a first component and a second component different in specific gravity from each other into the fluid circuit is provided, in which the fluid circuit includes a specimen measurement unit connected to the specimen inlet and having a prescribed volume for measuring the specimen introduced through the specimen inlet and a separation unit which is a site connected to the specimen measurement unit and having a capacity capable of storing the total amount of the measured specimen, for storing the total amount of the measured specimen and separating the first component and the second component in the stored specimen from each other.

Microchip

This invention relates to a vaccine for preventing or treating tautopathy, comprising a vector, as an active ingredient, comprising a nucleic acid encoding a mutant tau protein linked to a secretion signal sequence, wherein the vaccine is capable of inducing an antibody against an (optionally phospholylated) tau protein in a subject in a more sustained manner compared with a case where the mutant tau protein is administered directly.

Vaccine for treatment of tautopathy

Provided are a microchip including a fluid circuit consisting of a space formed therein, a light-absorbing first substrate and a light-transmitting second substrate bonded onto the first substrate, and a groove, having a V-shaped section, extending parallelly to the fluid circuit on a surface of the second substrate opposite to the first substrate on a position immediately above at least part of the fluid circuit and a method of manufacturing the same.

Microchip and method of manufacturing the same

This invention relates to a vaccine for preventing or treating tautopathy, comprising a vector, as an active ingredient, comprising a nucleic acid encoding a mutant tau protein linked to a secretion signal sequence, wherein the vaccine is capable of inducing an antibody against an (optionally phosphorylated) tau protein in a subject in a more sustained manner compared with a case where the mutant tau protein is administered directly.

An overheat protection circuitof a semiconductor integrated circuit device of the invention has filter means for removing a high frequency component from a power supply voltage Vcc. Specifically, the overheat protection circuithas: a band gap power supply portion BG and resistors Rand Rthat produce a reference voltage Vref; a transistor Nfor temperature detection; resistors Rand Rthat generate, from the power supply voltage Vcc, a control signal Sctrl according to the on/off state of the transistor N; a transistor Pthat is turned on/off according to the control signal Sctrl; and a transistor Nand resistors Rand Rthat generate an overheat protection signal Stsd according to the on/off state of the transistor P. In addition, the overheat protection circuithas, as the filter means, a resistor Rand a capacitor Cthat are respectively connected to the emitter and the collector of the transistor P. This makes it possible to perform a high-accuracy overheat protection operation despite variations in power supply voltage (superimposition of pulse).

Growing community of inventors

Kyoto, Japan

Hiroki Takeuchi