Japan Display Inc.

Nippon Telegraph and Telephone Corporation

Japan Display West Inc.

Epson Imaging Devices Corporation

Sony Corporation

Nec Corporation

Nippon Steel & Sumikin Engineering Co., Ltd.

Tokyo Rope Mfg. Co., Ltd.

Hiroki Sugiyama

Kentaro Okuyama

Manabu Mizuno

Hiroshi Inamura

Yoshihide Ohue

Takayuki Kato

Hideki Kaneko

Tomoyuki Tada

Shinichiro Nomura

Hideaki Matsuzaki

Satoshi Morita

Takuya Hoshi

Yuki Yoshiya

Takao Atarashiya

Keiji Takizawa

Tomoyuki Nakano

Kaoru Taketa

Yuuji Oomori

Takashi Sato

Takeo Koito

Fujio Okumura

Toshinori Uehara

Yudai Numata

Kimitaka Kamijo

Takuya Nishimoto

Koya Takata

Kunio Maruyama

Yuta Shiratori

Shinsuke Yamazaki

Minoru Ida

Shinya Ibuki

Yasuyuki Kai

Junichi Ibukuro

Takahiro Shoji

Satoru Kuramata

Satoshi Moritai

According to one embodiment, a display device includes a first substrate, a second substrate, a liquid crystal layer including polymers and liquid crystal molecules, and a light-emitting element. The first substrate includes a transparent substrate, a scanning line, a signal line crossing the scanning line, a switching element electrically connected to the scanning line and the signal line, an organic insulating film overlapping the switching element, and a pixel electrode electrically connected to the switching element. A thickness of the organic insulating film located between the transparent substrate and the pixel electrode is less than a thickness of the organic insulating film overlapping the switching element.

Display device including a liquid crystal layer including polymers and liquid crystal molecules and switching between a scattering state and a transmitting state

A display device includes: an array substrate; a counter substrate; a liquid crystal layer between the array substrate and the counter substrate; and a light source. The array substrate includes: signal lines; scanning lines; a grid-shaped organic insulating layer that extends along the scanning lines and the signal lines and overlies the scanning lines and the signal lines; pixel electrodes provided in regions surrounded by the scanning lines and the signal lines; and a first orientation film that covers the pixel electrodes. A portion of each pixel electrodes overlaps a slant surface of the organic insulating layer. The counter substrate includes: a common electrode overlapping the respective pixel electrodes; a protective film that has an insulating capability and a light transmitting capability and covers a side of the common electrode facing the array substrate at least in the display region; and a second orientation film that covers the protective film.

Display device

According to one embodiment, a display device including a first substrate including a first pixel and a second pixel, a second substrate, a liquid crystal layer containing polymer and liquid crystal molecules, and a light emitting element, wherein the second pixel is located between the light emitting element and the first pixel, the first substrate includes a switching element including a semiconductor layer arranged in the first pixel, a pixel electrode, and a first light shielding portion arranged in the second pixel and being adjacent to the semiconductor layer, the first light shielding portion is located between the semiconductor layer and the light emitting element in planar view and located on a side closer to the first pixel than a center of the second pixel.

An emitter contact layer, an emitter layer, a base layer, a p-type base layer, a collector layer, and a sub-collector layer are crystal-grown over a first substrate in this order with the main surface as the Group III polar surface. The emitter contact layer includes a nitride semiconductor that is made n-type at a relatively high concentration. The emitter layer includes a nitride semiconductor having a bandgap larger than that of the nitride semiconductor constituting the emitter contact layer. The base layer includes an undoped nitride semiconductor having a bandgap smaller than that of the nitride semiconductor constituting the emitter layer. The p-type base layer includes the same nitride semiconductor as the base layer and made p-type.

Heterojunction bipolar transistor and manufacturing method of the same

A first semiconductor layer, a second semiconductor layer, a channel layer, a barrier layer, and a third semiconductor layer are crystal-grown in this order on a first substrate in the +c axis direction, a second substrate is bonded to the side of the barrier layer of the first substrate, and after that, the first substrate is removed, and the first semiconductor layer is selectively thermally decomposed by heating.

Method for fabricating field-effect transistor

A display device includes a front plate, a display panel disposed on a back surface side of the front plate, a backlight disposed on a back surface side of the display panel, a housing that accommodates the backlight, a support member disposed on the back surface side of the front plate and outside the housing, the support member supporting the front plate, and a clamping member clamping an outer edge of the front plate and an outer edge of the support member.

Display device comprising a clamping member clamping an outer edge of a front plate and an outer edge of a support member

Display device including a liquid crystal layer including polymers and liquid crystal molecules switching between a scattering state and a light transmitting state

A first regrowth layer and a second regrowth layer comprising GaAs having high resistance are regrown on a surface of an etching stop layer exposed to the bottom of a first groove and a second groove, and then n-type InGaAs is regrown on the first regrowth layer and the second regrowth layer, whereby a source region and a drain region configured to make contact with a channel layer are formed in the first groove and the second groove respectively.

Transistor manufacturing method

According to an aspect, a display apparatus includes: a first light-transmissive substrate; a second light-transmissive substrate arranged to face the first light-transmissive substrate; a liquid crystal layer including polymer dispersed liquid crystals sealed between the first light-transmissive substrate and the second light-transmissive substrate; at least one light-emitting device arranged to face at least one of a side surface of the first light-transmissive substrate or a side surface of the second light-transmissive substrate; and at least one reflector arranged on at least one of a side surface of the first light-transmissive substrate or a side surface of the second light-transmissive substrate, the side surface of the first or second light-transmissive substrate being on an opposite side of the side surface of the first or second light-transmissive substrate to which the at least one light-emitting device faces, and configured to reflect light at the side surface on the opposite side.

Display apparatus

According to an aspect, a detection device includes: a substrate; a photodiode in which a lower electrode, a semiconductor layer, and an upper electrode are stacked on the substrate in the order as listed; a transistor provided in the photodiode; and an insulating layer provided between layers of the transistor and the photodiode. The insulating layer has a contact hole provided in a central portion of the photodiode in plan view. The lower electrode of the photodiode is provided on the insulating layer, is provided continuously in an area overlapping the contact hole, and is electrically coupled to the transistor at a bottom of the contact hole. A first opening is provided in an area of the upper electrode that overlaps the contact hole.

Detection device

A display device according to an aspect includes: an array substrate including a plurality of first light-transmitting electrodes each disposed in a corresponding one of pixels; a counter substrate including positions that overlap the first light-transmitting electrodes in a plan view and are provided with a second light-transmitting electrode; a liquid crystal layer including polymer-dispersed liquid crystals filled between the array substrate and the counter substrate; and at least one light emitter configured to emit light toward a side surface of the counter substrate. The array substrate includes, in each of the pixels, a third light-transmitting electrode and a conductive metal layer. The third light-transmitting electrode at least partially overlaps the first light-transmitting electrode in the plan view with an inorganic insulating layer interposed therebetween, and the conductive metal layer is stacked on the third light-transmitting electrode.

A buffer layer, an etching stop layer, and a channel layer are epitaxially grown in this order on a substrate. The substrate contains InP that has a high resistance by, for example, being doped with Fe. The buffer layer contains a compound semiconductor lattice-matched to InP. The etching stop layer includes InAlP (0&#x2264;x&#x2264;0.75). The channel layer contains InGaAs (0&#x3c;y&#x2264;1).

Field effect transistor and method for manufacturing same

A light-receiving device includes: a light guide plate that is a transparent member having, as main surfaces, a first surface and a second surface facing each other and has an emission end formed on at least one end portion of the light guide plate; a wave plate that is disposed on the first surface of the light guide plate and converts an optical signal of circularly polarized light into linearly polarized light; a hologram layer that is disposed on the second surface of the light guide plate and guides a traveling direction of the optical signal converted into the linearly polarized light toward the emission end of the light guide plate; and a light receiver that receives the optical signal emitted from the emission end of the light guide plate and converts the received optical signal into an electrical signal.

Light-receiving device

According to an aspect, a display device includes: a first light-transmitting substrate; a second light-transmitting substrate disposed so as to face the first light-transmitting substrate; a liquid crystal layer comprising polymer dispersed liquid crystals between the first light-transmitting substrate and the second light-transmitting substrate; and a multilayered film on an outer surface or surfaces of at least one of the first light-transmitting substrate and the second light-transmitting substrate, the multilayered film being configured to reflect light from the first light-transmitting substrate or the second light-transmitting substrate, and absorb light from outside the first light-transmitting substrate or the second light-transmitting substrate.

Growing community of inventors

Tokyo, Japan

Hiroki Sugiyama