Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Renesas Electronics Corporation

Other

Reneses Technology Corp.

Hiroki Shimano

Kazutami Arimoto

Shigeki Tomishima

Tsukasa Ooishi

Takeshi Fujino

Katsumi Dosaka

Toshinori Morihara

Masahiro Shimizu

Katsuhiro Tsukamoto

Takeshi Hashizume

Masahide Inuishi

Masataka Minami

Hideyuki Noda

Hiroji Ozaki

Shigeki Obayashi

Hiroki Sugano

Hideto Hidaka

Fukashi Morishita

Hiroshi Kato

Yoshinori Okumura

Hiroaki Tanizaki

Tomonori Okudaira

Takaharu Tsuji

Isamu Hayashi

Masao Nagatomo

Yasuhiro Ishizuka

Seizou Furubeppu

To provide a signal generation circuit having a short settling time of an output voltage. In a PTAT signal generation circuit, a trimming circuit is coupled between the cathodes of 0-th to K-th diodes and a line of a ground voltage, the anode of the 0-th diode is coupled to a first node, the anodes of the first to the K-th diodes are coupled to a second node via a resistive element, the first node and the second node are set to the same voltage, a first current flowing through the 0-th diode and a second current flowing through the first to the K-th diodes are set to have the same value, and a third current flowing through the trimming circuit is set to have the value 2 times that of each of the first current and the second current.

Signal generation circuit and temperature sensor

A solid-state image sensor device comprises an image sensor section for outputting analog signals of an image being taken; a plurality of AD converter sections, arranged with respect to the column direction of the image sensor section, for converting the analog signals into digital signals; a drive circuit section for controlling the image sensor section and the AD converter sections; and a plurality of differential interface sections for transmitting the digital signals converted by the AD converter sections as differential output signals to an external device. Each of the differential interface sections comprises a current value changeover circuit and offset voltage holding circuit operative when an operation mode changeover is made.

Solid-state image sensor device and differential interface thereof

A pair of operator cells each having a series-coupled circuit of first and second transistors is used as a storage unit. To-be-retrieved data and retrieval data are respectively stored in the first and second transistors, and mutually complementary data items are stored in the operator cells of the storage unit. The operator cells supply currents according to the result of an AND operation between the stored data items to corresponding bit lines, and the read data from the storage unit corresponds to the result of an EXOR operation between the retrieval data and the to-be-retrieved data. The currents flowing in the corresponding bit lines are amplified with sense amplifier circuits to drive local match lines. In the individual sub-blocks of an operator cell array, data items having different pattern lengths can be stored. The potentials of the local match lines are selected according to the data pattern lengths, and match retrieval is performed for the data items having the different pattern lengths.

Semiconductor signal processing apparatus

A unit operator cell includes a plurality of SOI (Silicon on Insulator) transistors, write data is stored in a body region of at least two SOI transistors, and the storage SOI transistors are connected in series with each other to a read port or each of the storage SOI transistors is singly connected to the read port. Therefore, an AND operation result or a NOT operation result of data stored in the unit operator cells can be obtained, and operation processing can be performed only by writing and reading data. A semiconductor signal processing device that can perform logic operation processing and arithmetic operation processing at high speed is implemented with low power consumption and a small occupation area.

Semiconductor signal processing device

A solid-state image sensor device and a differential interface thereof that are capable of ensuring stable transmission of image data while reducing power consumption. In an aspect of the present invention, a solid-state image sensor device comprises an image sensor section for outputting analog signals of an image being taken; a plurality of AD converter sections, arranged with respect to the column direction of the image sensor section, for converting the analog signals into digital signals; a drive circuit section for controlling the image sensor section and the AD converter sections; and a plurality of differential interface sections for transmitting the digital signals converted by the AD converter sections as differential output signals to an external device. Further, each of the differential interface sections comprises a current value changeover circuit for selecting a constant current to be applied in each differential interface section in accordance with each of a plurality of operation modes, and an offset voltage holding circuit for maintaining a constant offset voltage level for the differential output signals even when an operation mode changeover is made.

One memory cell is formed of a first port access transistor, a second port access transistor and a storage transistor coupled commonly to these access transistors. The first port access transistor is coupled to a first electrode of the storage transistor, and the second port access transistor is coupled to a third electrode of the storage transistor. These first and second port access transistors enter a selected state when first and second port word lines are selected, respectively, to couple corresponding second and third electrodes of the corresponding storage transistor to first and second port bit lines, respectively. A dual-port memory cell of which scalability can follow miniaturization in a process can be provided.

Semiconductor memory device

During a stand-by state in which power supply is cut off, a high-voltage power supply control circuit isolates a global negative voltage line transmitting a negative voltage and a local negative voltage line provided corresponding to each respective sub array block from each other and isolates a global ground line and a local ground line transmitting a ground voltage from each other. These local ground line and local negative voltage line are charged to a high voltage level through a high voltage line before cut-off from the corresponding power supply. A leakage current path from a word line to the negative voltage line or the ground line is cut off, so that the word line in a non-selected state can reliably be maintained at a non-selection voltage. Thus, in a low power consumption stand-by mode, data stored in a memory cell can be held in a stable manner.

Conductive lines constituting word lines of memory cells and conductive lines constituting memory cell plate electrodes are formed in the same interconnecting layer in a memory device including a plurality of memory cells each including a capacitor for storing data in an electrical charge form. By forming the capacitors of the memory cells into a planar capacitor configuration, a step due to the capacitors is removed. Thus a dynamic semiconductor memory device can be formed through CMOS process, and a dynamic semiconductor memory device suitable for merging with logic is achieved. Data of 1 bit is stored by two memory cells, and data can be reliably stored even if the capacitance value of the memory cell is reduced due to the planar type capacitor.

Conductive lines constituting word lines of memory cells and conductive lines constituting memory cell plate electrodes are formed in the same interconnecting layer in a memory device including a plurality of memory cells each including a capacitor for storing data in an electrical charge form. By forming the capacitors of the memory cells into a planar capacitor configuration, a step due to the capacitors is removed. Thus, a dynamic semiconductor memory device can be formed through CMOS process, and a dynamic semiconductor memory device suitable for merging with logic is achieved. Data of 1 bit is stored by two memory cells, and data can be reliably stored even if the capacitance value of the memory cell is reduced due to the planar type capacitor.

In a data holding mode, data storage in a one bit/one cell scheme in a normal operating mode are rearranged into data storage in a twin-cell mode in which data are stored in a one bit/two cell scheme. In the twin-cell mode, two sub word lines are simultaneously driven into a selected state, and storage data of memory cells are read out on both of bit lines in a pair, to perform a sense operation. Thus, the read-out voltage can be increased to improve the data retention characteristics for lengthening a refresh interval, resulting in a reduced power consumption in the data holding mode.

Refresh-free dynamic semiconductor memory device

Semiconductor memory device with improved data retention characteristics

A memory cell unit includes a first storage element and a second storage element for storing complementary data with each other. In a selected state, the first and second storage elements are connected to complementary bit lines, respectively at a time. In a standby state, the bit lines are precharged to a voltage (Vccs or GND) corresponding to the data stored in the memory cell unit. Refresh-free, low-current-consumption semiconductor memory device operating stably even under a low power supply voltage can be implemented.

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Hyogo, Japan

Hiroki Shimano