Hitachi, Ltd.

Hiroki Sakuta

Kikuo Ono

Makoto Tsumura

Kazuhiro Ogawa

Yoshiaki Nakayoshi

Toshiki Kaneko

Genshiro Kawachi

Kouichi Anno

Masaaki Kitajima

Takashi Suzuki

Kenichi Onisawa

Masahiko Suzuki

Tetsuro Minemura

Kenichi Hashimoto

A liquid crystal display device and a manufacturing method therefor are provided where the number of processes for manufacturing TFT substrates can be decreased and a high production yield can be attained. To attain these objects, an image signal bus-line includes at least a transparent conductive film and a semiconductor layer. A pattern of the transparent conductive film extends up to a thin film transistor to form its drain electrode, and a pattern of a semiconductor layer extends up to the transistor to form its source electrode. By virtue of these arrangements, the thin film transistor substrate can be manufactured using as little as three or four photolithography processes.

Active matrix LCD device with image signal lines having a multilayered structure

In order to provide a liquid crystal display apparatus having bright image display and a preferred production yield, a gate insulating film under a transparent pixel electrode on a transparent substrate is provided with an aperture smaller than a plane area of the pixel electrode, and a source electrode pattern under the pixel electrode is composed so as to cross the aperture. Thin film transistors (TFT) of the liquid crystal display apparatus have a gate electrode and a laminate layer of a gate insulating film and a semiconductor film. End portions of the gate electrode and the laminate layer are tapered, and the end portion of the gate electrode is tapered with a taper angle equal to or less than three times (where, less than 90.degree.) of a taper angle at the end portion of the laminate layer.

Liquid crystal display apparatus

Active matrix LCD device with image signal lines having a multilayered

In order to provide a liquid crystal display apparatus having bright image display and a preferable production yield, a gate insulating film under a transparent pixel electrode on a transparent substrate is provided with an aperture smaller than a plane area of the pixel electrode, a source electrode pattern under the pixel electrode is composed so as to cross the aperture, and thin film transistor (TFT) having a gate electrode of which end portion is tapered with a taper angle equal to or less than three times (where, less than 90.degree.) of a taper angle at the end portion of a semiconductor pattern is provided.

Active matrix crystal display apparatus using thin film transistor

Growing community of inventors

Mobara, Japan

Hiroki Sakuta