Shin-etsu Handotai Co., Ltd.

Hiroki Ose

Takeshi Arai

Tomosuke Yoshida

Koji Ebara

Kenji Akiyama

Yasuo Kasahara

Tamotsu Maruyama

A susceptor () supporting a semiconductor substrate (W) in a vapor phase growth, wherein a pocket () is formed on an upper surface of the susceptor to arrange the semiconductor substrate (W) inside thereof. The pocket () has a two-stage structure having an upper stage pocket () for supporting an outer peripheral edge portion of the semiconductor substrate (W) and a lower stage pocket () formed on a lower stage of a center side from the upper stage pocket (). A hole () penetrated to a rear surface of the susceptor and opened in the vapor phase growth is formed in the lower stage pocket ().

Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer

A heat treatment apparatus () having: a susceptor () rotatably provided in a heat treatment vessel (), on which a wafer (W) is placed; a preheat ring () surrounding a periphery of the susceptor () to be close to and in non-contact with the susceptor, which is supported by a base () provided in the heat treatment vessel (); and a heating apparatus () for heating a wafer (W) placed on the susceptor (), wherein the preheat ring () is formed such that an inner peripheral center () is eccentric to an outer periphery (). The preheat ring () is moved around the susceptor (); the preheat ring () is positioned to minimize a distance between the inner peripheral center () of the preheat ring () and the center () of the susceptor (); and thereafter a heat treatment is performed to a wafer (W).

Heat treatment device and heat treatment method

Semiconductor wafer and vapor phase growth apparatus

Semiconductor wafer and production method therefor

Performing the post-implantation annealing for recovering crystallinity in a hydrogen atmosphere can successfully suppress the surface roughening on the ion-implanted layers without pre-implantation oxidation. This allows omission of the pre-implantation oxidation and allows ion implantation using only a photoresist film as a mask in a method for producing an epitaxial wafer having buried ion-implanted layers. Since an intentional formation of an oxide film, including such pre-implantation oxidation, on an epitaxial layer is omitted, the number of repetition of the thermal history exerted to the buried ion-implanted layers can be reduced, which effectively suppresses lateral diffusion of implanted ions. Since the formation and removal of the oxide film is thus no more necessary, the number of process steps in the production of the epitaxial wafer can dramatically be reduced.

Production method for silicon epitaxial wafer and silicon epitaxial wafer

It is the object of the present invention to provide not only a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity and substantially no slip dislocation on a main surface of a semiconductor single crystal substrate having a relatively low dopant concentration, as large as 300 mm or more in diameter but also a vapor phase growth apparatus by means of which such a semiconductor wafer can be produced. A dopant gas is supplied into a reaction chamber through all of the inlet ports to disposed in a width direction of the reaction chamber from a common gas pipe functioning as a main dopant gas pipe. Further, the dopant gas is additionally supplied through inner inlet ports and , and middle inlet ports and , as specific gas inlet ports, into the reaction chamber from first and second auxiliary dopant gas pipes and

Semiconductor wafer and vapor growth apparatus

It is an object of the invention to provide a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity on a main surface of a semiconductor single crystal substrate of 300 mm or more in diameter. When a process gas is supplied to over a main surface of a silicon single crystal substrate in rotation in almost parallel to the main surface thereof in one direction in a reaction chamber through six inlet ports to disposed in width direction of the reaction chamber H gas, a semiconductor raw material gas and a dopant gas are supplied onto an area in the vicinity of the center of the main surface of the silicon single crystal substrate and an intermediate area thereof through the inner inlet ports and and the middle inlet ports and and only H gas and the semiconductor raw material gas without the dopant gas are supplied onto an area in the vicinity of the outer periphery thereof from the outer inlet ports and In such arrangement, a dopant gas produced by the auto-doping phenomenon is supplied onto the area in the vicinity of the outer periphery of the main surface of the silicon single crystal substrate For this reason, the dopant gases from both sources are combined, thereby a concentration of the dopant gas supplied over all the main surface of the silicon single crystal substrate is almost uniform.

A method for manufacturing a silicon single crystal substrate for use of an epitaxial layer growth. The method comprises the steps of: growing a CVD film on a rear surface and a peripheral side portion, of the silicon single crystal substrate; removing a portion of the CVD film on the peripheral side portion in the vicinity of a main surface of the silicon single crystal substrate, which was grown over an end of the peripheral side portion, by an abrasive tape grinding; and thereafter mirror-polishing the main surface of the silicon single crystal substrate.

Growing community of inventors

Annaka, Japan

Hiroki Ose