Mitsubishi Denki Kabushiki Kaisha

Hiroki Ootera

Kazuyasu Nishikawa

Masakazu Taki

Kenji Shintani

Tatsuo Oomori

Mutsumi Tsuda

Minoru Hanazaki

Toshihiko Minami

Koichiro Nakanishi

Mutumi Tuda

Noise-reduced semiconductor devices operating at a high frequency band greater than several GHz are disclosed. Also disclosed is a method for manufacturing such semiconductor devices. A trench penetrating through a semiconductor substrate surrounds a noise-generating circuit block and/or a noise-susceptible circuit block, in order to reduce noise propagation through the substrate. Noise-reduced semiconductor devices are fabricated with a conventional silicon wafer instead of an SOI (Silicon on Insulator) wafer, which is manufactured in a complicated process sequence.

Semiconductor device

In a wafer treatment apparatus, a hydrofluoric acid gas supply pipe and an evacuation pipe are connected to a chamber storing a wafer for performing prescribed treatment. A control part is provided for controlling supply of hydrofluoric acid gas. The control part sets a time for supplying the hydrofluoric acid gas into the chamber to be longer than a time up to starting of etching of a reaction product and shorter than a time up to starting of etching of a gate insulator film. Thus, only the reaction product can be substantially etched without etching the gate insulator film.

Method of fabricating a semiconductor device including time-selective etching process

A plasma processing method includes introducing at least one first processing gas into a processing chamber including a mounting stage supporting a substrate having a surface; generating a plasma in the first processing gas; introducing a second processing gas into a gas storage chamber separated from the processing chamber by a partition opposite the mounting stage and including a plurality of jet holes; and jetting neutral particles of the second processing gas from the gas storage chamber toward the substrate through the jet holes in a direction generally perpendicular to the surface of the substrate, thereby plasma processing the substrate.

Plasma processing apparatus

A plasma generating apparatus includes a vacuum container, an anode and a cathode including multiple electrodes, a power supply for applying a high voltage to the anode and the cathode, and switching elements for switching the electrodes in the anode and the cathode to which the high voltage is applied. The combination of the electrodes are switched by switching elements to form a sheet plasma at any desired angle relative to directional electromagnetic waves.

Plasma generating apparatus

A plasma processing apparatus has a processing chamber in which are provided one or more radio frequency antennas and a grounded opposite electrode positioned opposite to a sample. The radio frequency antenna,is formed of a material having no more than {fraction (1/100)} the volume resistivity of a material forming the opposite electrode. The radio frequency antenna may be buried in the opposite electrode, with its surface partially exposed to the plasma. Thus, the apparatus can have an enhanced processing rate and also provide a uniform process.

A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically of a polarity identical in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which an object to be processed is placed. Arrangement is provided so that the polarity of magnets located adjacent radially is opposite. An insulation substrate is provided between a partition panel and a processing chamber to electrically insulate a plasma generation chamber. Direct current voltage is applied in a pulsive manner to the plasma generation chamber. Thus, a plasma processing apparatus can be provided that allows formation of plasma uniformly over a large area, and processing of a specimen of a large diameter uniformly.

Two chamber plasma processing apparatus

A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically with the same polarity in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which a specimen is placed. Arrangement is provided so that the magnets located adjacent radially have opposite polarity. Furthermore, permanent magnets are arranged at the outer circumference of a vacuum vessel corresponding to a plasma generation chamber portion. A plasma processing apparatus can be provided that allows formation of uniform plasma over a large area and uniform processing of a specimen of a large diameter.

Plasma processing apparatus using a partition panel

A plasma is supplied from a plasma source to a space between an upper electrode plate and a lower electrode plate disposed opposite to and in parallel with the upper electrode plate when producing a plasma in the space between the electrode plates for plasma processing by applying radio-frequency power to the electrode plates. The plasma source produce a plasma by inductively coupled discharge, radio-frequency discharge or microwave discharge. A plasma processing apparatus is obtained which is capable of producing a parallel-plate plasma by discharge in a space of a relatively low pressure and is capable of processing a large diameter workpiece uniformly at a high processing rate.

A plasma processing apparatus capable of forming plasma uniformly throughout a large surface area whereby a sample having a large diameter can be uniformly processed. The plasma processing apparatus has a first electrode 3 on which a workpiece 2 is placed, a second electrode 4 located to face the first electrode 3, and a plurality of ring-shaped permanent magnets 11 each having the same polarity in their circumferential direction, and the magnets are disposed concentrically or the outer side of the second electrode 4 so that the polarities opposing in the radial direction of adjacent magnets 11 are opposite to each other.

A plasma processor comprising a plasma generation portion in which a plasma is generated by electron cyclotron resonance, a source of a right hand polarized microwave and supplying it to the plasma generation portion, and a plasma reaction portion which accommodates a substrate to be processed with the plasma generated in the plasma generation portion. Owing to the production and supply of the right hand polarized microwaves, almost all of the microwaves injected into the plasma generation portion contribute to the generation of the plasma, to increase plasma density and raise processing speed.

Plasma processor

A plasma processor wherein a substrate is processed using a plasma in a reaction gas generated through electron cyclotron resonance includes a magnetostatic field generator for generating a magnetostatic field, an electric field generator for generating an r.f. electric field perpendicular to the magnetostatic field, and a moving magnetic field generator for generating a moving magnetic field which intersects the magnetostatic field between the magnetostatic field generator and the substrate.

In a plasma processor having a plasma generation portion which generates a plasma through electron cyclotron resonance, and a plasma reaction portion which receives therein a substrate to be processed with the plasma; the improvement comprising the fact that the plasma generation portion includes a plasma generating glass tube which can supply a plasma generating gas, an r.f. waveguide which accommodates the plasma generating glass tube and which establishes a nonuniform r.f. electric field perpendicular to an axial direction of the plasma generating portion, and a coil assembly which is arranged around the r.f. waveguide and which establishes a nonuniform magnetostatic field in the axial direction, at least a part of the magnetic field of the coil assembly being subjected to a rotational motion or a rectilinear motion.

Growing community of inventors

Hyogo, Japan

Hiroki Ootera