Fujitsu Corporation

Hiroki Ogawa

Shuzo Fujimura

Jun Kikuchi

Haruhisa Mori

Kenji Ishikawa

Yuka Hayami

Miki T Suzuki

Yoshiko Okui

Carlos R Inomata

A hydrogen plasma downstream treatment equipment comprises a first gas supply source for supplying a hydrogen gas, a second gas supply source for supplying a nitrogen fluoride gas, and a tube-like chamber used for surface treatment of a semiconductor layer by use of the hydrogen gas and the nitrogen fluoride gas. The chamber includes a plasma generator for activating the hydrogen gas and the nitrogen fluoride gas by introducing the nitrogen fluoride gas in which a flow rate ratio of the hydrogen gas and the nitrogen fluoride gas is in excess of 4, a processor placed in a downstream of the plasma generator to place the semiconductor layer therein, and gas flow controlling means for controlling the first gas supply source and the second gas supply source so as to set a flow rate of the nitrogen fluoride gas four times a flow rate of the hydrogen gas.

Hydrogen plasma downstream treatment equipment and hydrogen plasma

Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.

Semiconductor substrate cleaning method and semiconductor device

In a silicon oxide film evaluation method for evaluating the silicon oxide film formed on a silicon substrate, radiation of a plurality of incident angles is irradiated to the silicon oxide film, reflected radiation of the radiation of the plural incident angles on the silicon oxide film is measured, reflectances for the radiation of the plural incident angles is computed, based on the radiation of the plural incident angles and reflected radiation thereof, a dielectric function is computed, based on the reflectances for the plural incident angles, and film quality of the silicon oxide film is evaluated, based on the dielectric function. The silicon oxide film evaluation method and apparatus can evaluate film quality of the silicon oxide film formed on the silicon substrate in non-contact and non-destructively.

Silicon oxide film evaluation method

Growing community of inventors

Kawasaki, Japan

Hiroki Ogawa