Hitachi, Ltd.

Renesas Technology Corp.

Hiroki Nezu

Noriyuki Sakuma

Yoshio Homma

Seiichi Kondo

Takeshi Kimura

Tsuyoshi Tamaru

Shigeru Kobayashi

Osamu Kasahara

Masakazu Ishino

Youhei Yamada

Susumu Tsuzuku

Eisuke Nishitani

In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.

Polishing apparatus

In order to resolve problems of an increase in cost of transportation and vessels for polishing solutions to polish metal films, and of aging change of the polishing solutions, apparatus for preparing and mixing solutions of polishing materials without including abrasive are installed at a site the same as a site of polishing apparatus, an abrasive free slurry is supplied to the polishing apparatus and a metal film on a wiring substrate is polished to thereby form embedded metal wirings by which the cost of polishing metal can significantly be reduced and stability of the polishing solution is promoted.

Polishing apparatus using substantially abrasive-free liquid with mixture unit near polishing unit, and plant using the polishing apparatus

The present invention relates to a method for filling small via holes provided to insulating film on a wafer to expose parts of the underlayer of the wafer by metal by means of CVD, and an apparatus therefor. The gist of the present invention lies in that, before CVD is conducted, a surface cleaning treatment of small via hole bottom underlayer surface and a stabilization treatment of insulating film surface activated thereby are carried out successively or simultaneously and optionally an anti-corrosive treatment is applied to underlayer surface, and then the CVD treatment is conducted without exposing the underlayer metal subjected to above treatments to the air. The present invention provides an effect of enabling via filling by metal which shows good selectivity and gives a low interfacial resistance between underlayer metal and filled metal.

Process for forming multilayer wiring

Growing community of inventors

Hamura, Japan

Hiroki Nezu