Jsr Corporation

Hiroki Nakatsu

Hiroki Nakagawa

Kazunori Takanashi

Naoya Nosaka

Yuushi Matsumura

Kazunori Sakai

Ichihiro Miura

Shin-ya Nakafuji

Tomoaki Taniguchi

Goji Wakamatsu

Tsubasa Abe

Tomohiro Oda

Kengo Ehara

A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Arrepresents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Arrepresents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and Rrepresents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and Rrepresents an ethynediyl group or a substituted or unsubstituted ethenediyl group.

Composition, pattern-forming method, and compound-producing method

The composition contains a compound and a solvent. The compound includes a group represented by formula (1). The compound has a molecular weight of no less than 200 and has a percentage content of carbon atoms of no less than 40% by mass. In the formula (1), Rand Reach independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms, or Rand Rtaken together represent a part of an alicyclic structure having 3 to 20 ring atoms constituted together with the carbon atom to which Rand Rbond; Arrepresents a group obtained by removing (n+3) hydrogen atoms from an arene or heteroarene having 6 to 20 ring atoms; and X represents an oxygen atom, &#x2014;CRR&#x2014;, &#x2014;CRR&#x2014;O&#x2014; or &#x2014;O&#x2014;CRR&#x2014;. 

Composition, film, film-forming method and patterned substrate-producing method

A composition for resist underlayer film formation, includes a compound represented by formula (1) and a solvent. Arrepresents an aromatic heterocyclic group having a valency of m and having 5 to 20 ring atoms; m is an integer of 1 to 11; Aris a group bonding to a carbon atom of the aromatic heteroring in Arand represents an aromatic carbocyclic group having 6 to 20 ring atoms and having a valency of (n+1) or an aromatic heterocyclic group having 5 to 20 ring atoms and having a valency of (n+1); n is an integer of 0 to 12; and Rrepresents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a halogen atom, or a nitro group.ArArR))&#x2003;&#x2003;(1)

Composition for resist underlayer film formation, resist underlayer film and forming method thereof, patterned substrate-producing method, and compound

A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): Rand Reach independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of Rand Rrepresents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or Rand Rtaken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which Rand Rbond. 

Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method

A composition for resist underlayer film formation contains: a first compound including at least one oxazine structure fused to an aromatic ring; and a solvent. The first compound preferably includes a partial structure represented by formula (1). In formula (1), Rto Reach independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Arrepresents a group obtained by removing (n+3) or (n+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms; Rrepresents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 0 to 9. 

Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate

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Tokyo, Japan

Hiroki Nakatsu