Sony Corporation

Sony Semiconductor Solutions Corporation

Gc Corporation

Hiroki Naito

Arata Kobayashi

Sayaka Aoki

Daisuke Saito

Takahiro Koyama

Goshi Biwa

Ippei Nishinaka

Masayuki Suzuki

Hiroyuki Okuyama

Yuichi Ishida

Katsuyuki Hironaka

Gen Sakoda

Keiko Furukawa

Kenichi Takahashi

Hiroshi Kamohara

Takayuki Kawasumi

Akira Ohmae

Tatsuo Ohashi

Toshio Fujino

Nobutaka Watanabe

Yusuke Kataoka

Kensuke Kojima

Makoto Oogane

Makiko Takeo

Takeshi Morozumi

Hideyuki Nishioka

Tsuyoshi Sahoda

A light-emitting device assembly includes a light-emitting device including a light-emitting layer, a first electrode, and a second electrode, and a first connecting portion and a second connecting portion provided on a base, in which the first connecting portion and the second connecting portion are separated from each other by a separation portion, the base is exposed from the separation portion, a wide portion is on a first connecting portion side of the separation portion, the first electrode includes a first portion and a second portion, the second portion of the first electrode is connected to the first connecting portion, the first portion of the first electrode extends from the second portion of the first electrode, and an orthographic projection image of the first portion of the first electrode with respect to the base and the wide portion of the separation portion overlap with each other at least in part.

Light-emitting device assembly, method of producing the same, and display apparatus

A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Light-emitting element wafer, light emitting element, electronic apparatus, and method of producing light-emitting element wafer

A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Light-emitting element wafer, light emitting element, electronic apparatus

A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Light-emitting element having an optical function film including a reflection layer

A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Semiconductor light emitting device, method of manufacturing the same, image display device, and electronic apparatus

A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in the thickness direction thereof so that the band-gap energy in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than that in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.

GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus

A display device which is capable of generating more parallaxes without reducing resolution and an image quality, a display controlling method, and a program are provided. An aperture ratio of a light source is set as 1/N, and liquid lenses are disposed at distances of focal lengths of the first liquid lens and the second liquid lens from the light source, respectively. A position controlling portion changes a position of a nonpolar liquid by a size of each of luminescent pixels as represented by the first liquid lens and the second liquid lens, which results in that emitted lights from respective luminescent pixels pass through either the first liquid lens or the second liquid lens to be emitted in directions different from one another as shown in the form of lights. The present embodiments can be applied to a parallax image displaying device.

Display device, display controlling method, and program

A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of manufacturing GaN-based semiconductor light-emitting element, method of driving GaN-based semiconductor light-emitting element, and image display apparatus

Crystalline superfine particles capable of emitting light depending upon a time-rate-of-change of a stress and controlled in grain size in the range from 5 nm to 100 nm are complexed with another material such as resin. The crystalline superfine particles are manufactured by using aggregates of molecules, i.e. inverted micelles, which orient hydrophilic groups of surfactant molecules inward and hydrophobic groups outward in a nonpolar solvent and which contain metal ions of a metal for forming the crystalline superfine particles dissolved in water inside the inverted micelles. Alternatively, they are manufactured by using inverted micelles enveloping precursor superfine particles, in which precursor superfine particles are enveloped in water inside the inverted micelles. The crystalline superfine particles are excellent in dispersibility in another material to be complexed, enhanced in emission efficiency and usable to make a transparent stress emission material. The complex material obtained is used to manufacture artificial light-emitting hair structures, artificial light-emitting skin, artificial light-emitting bodies, artificial light-emitting fabrics, and others.

Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particles

To provide a dental alginate impression material composition without the defects of the conventional alginate impression material compositions using a pH indicator, that the confirmation of the completion of the gelation is inaccurate and difficult, and that they are poor in the affinity with water to be used during the mixing, the dental alginate impression material composition containing an alginate, a gelling reaction material, a gelling adjustment material, and a filler as major components further contains 0.001 to 0.1% by weight of one or more pH indicators selected from Cresol Red, &agr;-naphtholphthalein, Tropaeolin OOO, Thymol Blue, and phenolphthalein; 0.1 to 10% by weight of a water-soluble polyether that is a liquid at 25 &deg; C.; and 0.001 to 5% by weight of an inorganic pigment and/or an organic pigment having a color distinctly different from a color tone caused by color formation of the pH indicator during the gelation upon mixing with water.

Dental alginate impression material composition

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Kanagawa, Japan

Hiroki Naito