Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Hiroki Matsunaga

Jinsaku Kaneda

Akihiro Maejima

Hiroshi Ando

Eisaku Maeda

Masahiko Sasada

Masashi Inao

Shingo Fukamizu

Masanori Yamanaka

Yo Nakagawa

Shinichiro Kataoka

Seiya Yoshida

Naoki Hishikawa

A drive voltage supply circuit has a first wire line, a second wire line, a first drive circuit, a plurality of second drive circuits, a control circuit for driving the first drive circuit and the plurality of second drive circuits, and an impedance element connected between the first wire line and each of output terminals.

Drive voltage supply circuit

On a semiconductor chip in a semiconductor integrated circuit, a plurality of circuit cells each of which has a pad are formed along a first chip side of the semiconductor chip. Among the plurality of circuit cells, one or more circuit cells at least in the vicinity of an end portion on the first chip side are arranged having a steplike shift in a direction apart from the first chip side with decreasing distance from the center portion to the end portion on the first chip side.

Semiconductor integrated circuit

The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.

Sustain driver, sustain control system, and display device

In a semiconductor integrated circuit device of the present invention, temperature increase of a bonding wire can be suppressed even when conductive leads are short-circuited with each other, and reliability of the semiconductor integrated circuit device is improved. The conductive leads of a resin package for supplying a power supply section of a semiconductor integrated circuit chip with power from an external power supply are connected with bonding pads of the semiconductor integrated circuit chip by a plurality of bonding wires. Furthermore, the conductive leads connected to a GND for supplying the power supply section of the semiconductor integrated circuit chip with a grounding potential are connected with the bonding pads of the semiconductor integrated circuit chip by a plurality of bonding wires.

Semiconductor integrated circuit device, PDP driver, and plasma display panel

A semiconductor integrated circuit includes a high-side transistor, a low-side transistor, a level shift circuit for driving the high-side transistor, and a pre-driver circuit for driving the low-side transistor. A connection point of the high-side transistor and the low-side transistor serves as an output terminal. The level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit. The semiconductor integrated circuit further includes a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal.

Multi-channel semiconductor integrated circuit

The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, wherein a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.

Semiconductor integrated circuit device

A circuit for generating a ternary signal that receives a binary input-control signal and a binary reset signal and outputs a ternary signal. The circuit includes first to third transistors, each source terminal thereof is respectively connected to the three power supplies, and a sequential circuit that outputs control signals controlling the transistors. The sequential circuit outputs control signals that make the first and the third transistors be switched in a complementary manner in an initial state, and make the second and the third transistors be switched in a state that it is released from the initial state.

Circuit for generating ternary signal

Sustain driver, sustain control system, and plasma display

A driver circuit is provided for preventing generation of a pass-through current in a CMOS output unit even if a power supply voltage VDD supplied from a low voltage power supply drops below a recommended operating power supply voltage. The driver circuit includes a level shift unit having PMOS transistors and NMOS transistors, and a CMOS output unit having a PMOS transistor and an NMOS transistor. The source, drain and gate of one PMOS transistor are respectively connected to a high voltage power supply, a first contact and a second contact. The source, drain and gate of a second PMOS transistor are respectively connected to a high voltage power supply, the second contact and the first contact. The source of one NMOS transistor is grounded, the drain thereof is connected to the first contact, and the gate thereof receives a low voltage signal. The source of a second NMOS transistor is grounded, the drain thereof is connected to the second contact, and the gate thereof receives a low voltage signal. In this driver circuit, the driving current of the one PMOS transistor is higher than the driving current of the one NMOS transistor.

Driver circuit

A band gap circuit using NPN transistors () having collectors connected to a power source voltage is employed, and transistor active regions of the NPN transistors () and semiconductor elements constituting other signal processing circuits are integrated in the same floating block () with high voltage resistance. As a result, a reference voltage circuit used in the signal processing circuit can be integrated in a compact manner.

Semiconductor device with floating block

A fluorescent lamp lighting apparatus in accordance with the present invention has first switching means (M) driven by a high-voltage-side pulse signal input from a drive-signal generation circuit and second switching means (M) driven by a low-voltage-side pulse signal input from the drive-signal generation circuit, wherein the first switching means (M) is connected in series with the second switching means (M), and a first capacity (C) and an inductance element (L) and the above-mentioned second switching means (M) are provided between the high-voltage-side terminals of a pair of filament electrodes of a light-emitting tube (), whereby a constant luminous flux can be maintained immediately after lighting.

Apparatus for lighting fluorescent lamp

A reference signal generation unit generates a reference signal VCA showing a current limit value with a staircase waveform. A PWM control unit compares a measurement signal SENA obtained by a coil current measurement unit with the reference signal VCA at intervals of a PWM timing signal generated by a PWM timing signal generation unit, and switches transistors of a bridge rectification circuit ON and OFF according to the comparison, thereby PWM controlling a supply current to a coil. A discharge instruction signal generation unit issues a discharge instruction signal MMCPA when the reference signal VCA decreases. In response, a PWM control unit forms a current path in the bridge rectification circuit to cause a regenerative current to flow back into a power supply and capacitor.

Stepping motor drive device and method

A reference signal generation unit integrates a staircase signal, to produce reference signal VCTA whose waveform has no abrupt changes in level and which shows a current limit value. A PWM reference signal generation unit generates a PWM reference signal. A supply current measurement unit measures a supply current to a coil. A PWM control unit compares reference signal VCTA with the measurement value of the supply current measurement unit in each period of the PWM reference signal, and sets each transistor in a bridge rectification circuit in a conducting state or a nonconducting state according to the comparison result. In this way, the supply current to the coil is controlled to approach the current limit value shown by reference signal VCTA.

A fluorescent lamp lighting apparatus in accordance with the present invention has first switching means (M,) driven by a high-voltage-side pulse signal input from a drive-signal generation circuit and second switching means (M,) driven by a low-voltage-side pulse signal input from the drive-signal generation circuit, wherein the first switching means (M,) is connected in series with the second switching means (M,), and a first capacitor (C,) and an inductance element (L,) and the above-mentioned second switching means (M,) are provided between the high-voltage-side terminals of a pair of filament electrodes of a light-emitting tube (,), whereby a constant luminous flux can be maintained immediately after lighting.

Growing community of inventors

Takatsuki, Japan

Hiroki Matsunaga