Mitsubishi Rayon Company, Limited

Nec Corporation

Renesas Electronics Corporation

Kyocera Corporation

Nec Electronics Corporation

Ikeda Bussan Co. Ltd.

Hiroki Matsumoto

Yasushi Watanabe

Tomoyoshi Yamashita

Masahiro Okada

Yasuko Hayashi

Masaharu Oda

Makoto Ookawa

Yoshiaki Murayama

Fumiyuki Ito

Yoshihito Nozaki

Atsushi Saiki

The present invention provides a semiconductor device designed to prevent an electric field from being concentrated in the vicinity of a groove portion. The semiconductor includes a semiconductor layer, a source region, a drain region, a source offset region, a drain offset region, a groove portion, a gate insulating film, a gate electrode, and an embedded region. The groove portion is provided in at least a position between the source offset region and the drain offset region in the semiconductor layer in a plan view, in a direction from the source offset region to the drain offset region in a plan view. The gate insulating film covers a side and a bottom of the groove portion. The gate electrode is provided only within the groove portion in a plan view, and contacts the gate insulating film.

Semiconductor device including source and drain offset regions

A light guide () for a surface light source used to constitute a surface light source in combination with a primary light source () and guiding light emitted from the primary light source (). The light guide () has a light incident end face () on which the light emitted from the primary light source () impinges, a light exit face () from which guided light exits, and a rear surface () on the opposite side. A plurality of prism arrays () extending in a direction traversing the light incident end face () are formed on at least one of the light exit face () and the rear surface (), and each prism array () has a plurality of divided top portions () where the top is divided in the cross-section profile thereof in at least a partial region in the extending direction.

Light guide for surface light source device and surface light source device

A silica residue is generated, due to a presence of a step formed by a presence of the first layer metallic interconnect, and then, the residual silica is etched to form hollow portions when vias for the metallic interconnect provided in a layer above thereof is formed, and further, insulating materials remained above the hollow portions flakes off to create contaminants, leading to a reduction in the production yield. In the present invention, interconnects provided in a layer underlying a via group, which are provided for coupling to the upper layer interconnect layer, are disposed so as to cover vias composing its via group.

Semiconductor device and method for designing same

There are provided a portable terminal and a method of controlling the same with which it is possible to choose and display only data that is useful for users among contents existing on a communication network. A browser unit acquires a desirable contents source from a website by using reference information. An analyzing unit analyzes whether or not link information is established to the image data designated in the acquired source by the browser unit, and whether or not the domain and home directory of the image data match with the domain and home directory of text data contained in the source. A display control unit determines display or non-display of image data which is designated in the source based on the result of analysis.

Portable terminal and method of controlling the same

A light guide () for guiding light emitted from a primary light source (), having a light incident face () which light emitted from the primary light source () enters and a light emitting face () from which the guided light is emitted. The light emitting face () is uneven surface having a large number of micro convex curved surface areas. The average slant angle &#x3b8;a is 0.3&#xb0; to 30&#xb0;. The ten-point average roughness Rz is 0.7 &#x3bc;m to 10 &#x3bc;m. A light deflector () composed of a prism sheet is disposed beside the light emitting face ().

Surface light source and light guide used therefor

A method of manufacturing a semiconductor device includes forming a first insulating film having a first thickness in a first region on a semiconductor substrate, forming a first gate electrode on the first insulating film, and forming a second insulating film having a second thickness different from the first thickness on the semiconductor substrate and the first gate electrode. Then, the method includes forming a conductive film on the second oxide film and forming a first resist pattern and a second resist pattern respectively on the conductive film in the first region and on the conductive film of a second region different from the first region. Then, the method includes removing the conductive film by using the first resist pattern as a mask to form a second gate electrode covering the first gate electrode via the second insulating film and removing the conductive film by using the second resist pattern as a mask to form a third gate electrode on the second insulating film of the second region.

Method of manufacturing semiconductor device having multiple gate oxide films

A planar light source device contains a light source ( ); a light guide ( ) which has a light incident face ( ) on at least one side end surface thereof which confronts the light source ( ), and a light emitting face ( ) on one of two principal surfaces ( ) thereof; and a light direction varying sheet ( ) which is disposed on the light emitting face ( ) of the light guide ( ), wherein a back surface ( ) of the light guide ( ) opposing to the light emitting face ( ) is formed as a prism surface which comprises a plurality of elongated prisms each having substantially triangular cross section of a vertical angle within a range of 60 to 80&deg; or 125 to 150&deg; so as to extend in parallel to each other and in perpendicular to the light incident face ( ), and a major part of the light emitting face ( ) is formed as an uneven surface having an average slant angle of 0.3 to 30&deg;.

Planar light source device and liquid crystal display apparatus

Disclosed herein is a gear structure which comprises a sectoral base member of metal plate; and an arcuate flange portion integrally formed on an arcuate flange portion integrally formed on an arcuate peripheral portion of the sectoral base member. The arcuate flange portion is formed on an outer surface of thereof with forged teeth. A method of producing the gear structure is also disclosed, which comprises (a) preparing a sectoral member of metal plate, the sectoral member including a sectoral base portion and an arcuate flange portion which is integrally formed on an arcuate peripheral portion of the sectoral base portion; (b) putting the sectoral member into a press device in such a manner that the arcuate flange portion is intimately sandwiched between first and second dies, the second die having formed thereon teeth which face the arcuate flange portion; and (c) pressing the arcuate flange portion by such a degree that the arcuate flange portion is deformed to define thereon teeth by the provision of the toothed second die.

Growing community of inventors

Kanagawa, Japan

Hiroki Matsumoto