Dai Nippon Printing Co., Ltd.

S.e., Inc.

Hiroki Maeda

Junichi Hanna

Ken Tomino

Masanori Akada

Shigeru Sugawara

Jun-Ichi Hanna

Masayuki Ando

Satoshi Takeuchi

Tadafumi Shindo

Hiroaki Iino

Masanao Matsuoka

Tatsuya Tabei

Hideshi Hattori

Kyoko Kogo

Kei Ikegami

Toshio Yoshihara

Osamu Shimada

Tomohisa Motomura

Yoshiaki Tsuruoka

Toru Tanimori

Atsushi Takada

Tsutomu Takizawa

Masahiro Funahashi

Shin-ya Fujimoto

Akihiko Nakasa

Tomomi Suzuki

Kazuyoshi Togashi

Teppei Shimakawa

Jun-ichi Hanna

Shinobu Sakurada

Shinya Fujimoto

Hidehiro Nakagawa

A detection device for detecting radiation includes a container including a first portion, a second portion facing the first portion in a first direction, and a side portion extending from the first portion toward the second portion, where a gas is contained in the container, an electron detector located inside the container, where the electron detector detects an electron generated by Compton scattering, a drift electrode located inside the container closer to the second portion than the electron detector and facing the electron detector, and a radiation detector located closer to the second portion than the drift electrode, where the radiation detector detects scattered radiation.

Detection device

A problem is to provide a production method by which a high-strength concrete formed body can be obtained. The problem can be solved by a method for producing a concrete formed body including a defoaming step [1] of holding a concrete composition having a water-cement ratio adjusted to from 14 to 20%, in a reduced pressure atmosphere to obtain a defoamed concrete; a defoaming step [2] of holding a carbon fiber immersed in a cement solution having a water-cement ratio adjusted to 14% or more, in a reduced pressure atmosphere to obtain a defoamed fiber; and a forming step of placing the defoamed concrete and the defoamed fiber within a shuttering, followed by curing to obtain a high-strength concrete formed body.

Method for producing concrete formed body

A method for manufacturing an organic semiconductor element, capable of obtaining an organic semiconductor element in which an organic semiconductor layer is easily patterned without being lowered in mobility, which includes: a source electrode and drain electrode formation step; an organic semiconductor layer formation step of forming an organic semiconductor layer having the liquid crystal organic semiconductor material on the alignment layer to cover the source electrode and the drain electrode; a dielectric layer formation step of forming a dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and an annealing step of annealing the organic semiconductor layer, on which the dielectric layer is formed, at a liquid crystal phase temperature of the liquid crystal organic semiconductor material.

Method for manufacturing organic semiconductor element

This invention provides a vertical organic transistor that can realize large current modulation and a reduction in production cost, and a method for manufacturing the vertical organic transistor. The vertical organic transistor comprises an upper electrode, a lower electrode, an organic semiconductor provided between both the electrodes, and an intermediate electrode provided within the organic semiconductor, the intermediate electrode being a layered continuous body comprising a continuous insulating metal compound and particulate metals distributed within the insulating metal compound.

Vertical organic transistor, method for manufacturing the vertical organic transistor, and light emitting element

The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.

Manufacturing method of organic semiconductor device

The present invention is directed to the provision of a novel liquid crystalline organic semiconductor material that is highly stable under an film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material is represented by chemical formula 1 wherein R1 and R2 represent an identical alkyl group having 7 to 20 carbon atoms: There is also provided a liquid crystalline organic semiconductor material characterized by being represented by chemical formula 2 wherein R3 and R4 represent an identical alkyl group having 7 to 20 carbon atoms: 

Organic semiconductor material, organic semiconductor structure and organic semiconductor apparatus

There are provided an organic semiconductor material, which can constitute an organic semiconductor layer having homogeneous and a high level of charge transfer characteristics over a large area, and an organic semiconductor structure and an organic semiconductor device utilizing the organic semiconductor material. The organic semiconductor material comprises a polymeric compound and a monomeric compound, the polymeric compound having, in a part of its side chain, a core structure comprising a predetermined &#x3c0; electron ring, the monomeric compound having a core structure comprising a predetermined &#x3c0; electron ring, the monomeric compound having, in at least one of its both ends, a terminal group capable of developing liquid crystallinity.

Organic semiconductor material, organic semiconductor structure, and organic semiconductor device

An organic semiconductor device Including an organic semiconductor layer in a crystallized crystal state is disclosed. The organic semiconductor layer is formed from an organic semiconductor material including a liquid crystal molecule. The semiconductor material has properties capable of exhibiting a supercooled state during a phase transition process, in which a phase having no periodic regularity is capable of being transferred into a phase having periodic regularity at a location of a center of gravity in between the liquid crystal molecules. The phase having no periodic regularity at a location of a center of gravity In between the liquid crystal molecules is a nematic liquid crystal phase and the phase having periodic regularity at a location of a center of gravity in between the liquid crystal molecules is a crystal phase.

Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device

There are provided an organic semiconductor structure comprising an organic semiconductor layer, which is large in size and homogeneous and has high charge transfer characteristics, a process for producing the same, and an organic semiconductor device. The organic semiconductor structure has, in at least a part thereof, an organic semiconductor layer comprising an aligned liquid crystalline organic semiconductor material. The liquid crystalline organic semiconductor material comprises an organic compound having a core comprising L 6&#x3c0; electron rings, M 8&#x3c0; electron rings, N 10&#x3c0; electron rings, O 12&#x3c0; electron rings, P 14&#x3c0; electron rings, Q 16&#x3c0; electron rings, R 18&#x3c0; electron rings, S 20&#x3c0; electron rings, T 22&#x3c0; electron rings, U 24&#x3c0; electron rings, and V 26&#x3c0; electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6. The liquid crystalline organic semiconductor material exhibits at least one liquid crystal state at a temperature below the heat decomposition temperature thereof.

Organic semiconductor structure, process for producing the same, and organic semiconductor device

A novel information recording medium is provided which records information upon the application of thermal energy, reads the recorded information by detecting the value of photoelectric current generated by light applied to the information recorded portion, and can realize multi-valued information recording or analog information recording. The information recording medium comprises: a pair of electrodes; and a liquid crystal material filled into a gap between the electrodes, the liquid crystal material having a property such that the charge-transport properties are varied according to the phase transfer between a plurality of stable liquid crystal phases of the liquid crystal and/or the history of the phase transfer.

Information recording medium

The main object of the invention is to provide an organic semiconductor material whose material designing is easy, and is capable to secure satisfying purity, so that it can be easily used industrially. And further, also to provide an organic semiconductor structure and an organic semiconductor device using the organic semiconductor material. To achieve the object, the present invention provides an organic semiconductor material having a structural formula of the following chemical formula 1:-((A)-(B))-&#x2003;&#x2003;1 wherein A is a mesogen exhibiting liquid crystallinity; has a skeletal structure comprising a &#x3c0;-electron ring selected from a group consisting of L-unit of 6&#x3c0;-electron system ring, M-unit of 8&#x3c0;-electron system ring, N-unit of 10&#x3c0;-electron system ring, O-unit of 12&#x3c0;-electron system ring, P-unit of 14&#x3c0;-electron system ring, Q-unit of 16&#x3c0;-electron system ring, R-unit of 18&#x3c0;-electron system ring, S-unit of 20 &#x3c0;-electron system ring, T-unit of 22&#x3c0;-electron system ring, U-unit of 24&#x3c0;-electron system ring and V-unit of 26&#x3c0;-electron system ring (whereupon L, M, N, O, P, Q, R, S, T, U and V each represent an integer of 0 to 12, and L+M+N+O+P+Q+R+S+T+U+V is 1 to 12); B has a chain structure with high flexibility; and n is about 3 to about 3000.

An organic semiconductor material characterized by having a structure represented by chemical formula 1, the planarity of a main chain A1-X-A2 being disintegrated by steric hindrance between B1 and X and steric hindrance between B2 and X, the organic semiconductor material having a number average molecular weight of about 2,000 to about 200,000: wherein A1, A2, B1, B2 and X each have a skeleton structure comprising L 6 &#x3c0; electron rings, M 8 &#x3c0; electron rings, N 10 &#x3c0; electron rings, O 12 &#x3c0; electron rings, P 14 &#x3c0; electron rings, Q 16 &#x3c0; electron rings, R 18 &#x3c0; electron rings, S 20 &#x3c0; electron rings, T 22 &#x3c0; electron rings, U 24 &#x3c0; electron rings, and V 26 &#x3c0; electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and B1 and B2 have an alkyl group.

An organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. The organic semiconductor material has a quaterthiophene skeleton as shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.

There is provided a liquid crystalline organic semiconductor material that can effectively develop electron conductive properties which a liquid crystal system inherently has. The liquid crystalline organic semiconductor material has both an isotropic phase and a smectic liquid crystal phase and comprises an electronically conductive liquid crystal material, wherein the concentration of an impurity in the liquid crystal material is controlled to a lower value than the critical concentration at which the electron conductivity of the liquid crystal material disappears or is significantly reduced rendering ion conduction dominant.

Liquid crystalline organic semiconductor material and organic semiconductor structure using the same

An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 &#x3c0; electron aromatic rings, M 10 &#x3c0; electron aromatic rings, and N 14&#x3c0; electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle &#x3b8; of impedance of the organic semiconductor material is &#x2212;80&#xb0;&#x2266;&#x3b8;&#x2266;&#x2212;90&#xb0; as determined in the measurement of impedance in a frequency f range of 100 Hz&#x2266;f&#x2266;1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 &#x3bc;m.

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Tokyo-to, Japan

Hiroki Maeda