Kioxia Corporation

Toshiba Memory Corporation

Hiroki Kawai

Tadaomi Daibou

Katsuyoshi Komatsu

Hiroki Tokuhira

Daisuke Watanabe

Toshihiko Nagase

Tadashi Kai

Junichi Ito

Yasushi Nakasaki

Yuichi Ito

Takamitsu Ishihara

Takeshi Iwasaki

Masatoshi Yoshikawa

Keiji Ikeda

Hideto Horii

Junji Kataoka

Hiroshi Takehira

Kazuya Matsuzawa

Yoshitomo Kobayashi

Takao Kosaka

According to one embodiment, a semiconductor device includes an oxide semiconductor layer, an oxide conductor layer disposed on the oxide semiconductor layer, a first oxide layer disposed on the oxide conductor layer and comprising vanadium oxide, and a metal wiring layer disposed on the first oxide layer.

Semiconductor device and semiconductor memory device

A semiconductor device includes a first conductive layer extending along a first direction, a semiconductor layer extending along a second direction crossing the first direction, penetrating the first conductive layer, and including an oxide semiconductor, a first insulating layer between the first conductive layer and the semiconductor layer, a second conductive layer provided on one side of the semiconductor layer in the second direction and electrically connected thereto, a third conductive layer provided on the other side of the semiconductor layer in the second direction and electrically connected thereto, an electric conductor extending from the third conductive layer toward the second conductive layer along the semiconductor layer, and a charge storage film between the semiconductor layer and the electric conductor.

Semiconductor device and semiconductor storage device

According to one embodiment, a magnetic memory device including a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains a first additive element and a second additive element, the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mn), lithium (Li), nitrogen (N) and magnesium (Mg), and the second additive element is lithium (Li).

Magnetic memory device with nonmagnetic layer having two additive elements

A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of ZTeto ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the ZTe—ZN line is B, the material has a composition satisfying X=1.2 (1−A) (0.5+B), Y=A (0.5+B), and W=1−X−Y, where −0.06≤B≤0.06 is satisfied when ⅓>A and ¾<A, and −0.06≤B and Y≤0.45 are satisfied when ⅓≤A≤¾.

Switching device and resistance variable device

A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

Semiconductor memory device with a phase change layer and particular heater material

A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1C2A, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, 0&#x3c;z&#x3c;1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C1 satisfies x&#x2264;(3&#x2212;(3+b)&#xd7;y&#x2212;z)/(3+a).

Resistance variable device with chalcogen-containing layer

A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains SiTeN. The x, y, and z of the SiTeNsatisfy 0&#x3c;x&#x2264;35, 15&#x2264;y&#x2264;50, and 50&#x3c;z&#x2264;85, satisfy 0&#x3c;x&#x2264;45, 15&#x2264;y&#x2264;55, and 40&#x3c;z&#x2264;85, or satisfy 0&#x3c;x&#x2264;55, 15&#x2264;y&#x2264;65, and 30&#x3c;z&#x2264;85.

Selector and non-volatile storage device

A semiconductor device of an embodiment includes an oxide semiconductor layer. The oxide semiconductor layer includes a metal oxide containing at least one first metal element selected from the group consisting of indium and tin and at least one second metal element selected from the group consisting of zinc, gallium, aluminum, tungsten, and silicon. The oxide semiconductor layer includes a first region in which at least one anion element selected from the group consisting of fluorine and chlorine is contained within a range of 1 atomic % or more and less than 8 atomic % in the metal oxide.

Semiconductor device

According to one embodiment, a variable resistance element includes a first electrode, a second electrode, and a variable resistance layer and a tellurium-containing compound layer disposed between the first electrode and the second electrode. The tellurium-containing compound layer contains tellurium, oxygen, and at least one element selected from tin, copper, and bismuth. In some examples, the tellurium-containing compound layer can function as a switching layer in a memory cell structure.

Variable resistance element

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains an additive element selected from fluorine (F), sulfur (S), hydrogen (H) and lithium (Li).

Magnetic memory device

According to one embodiment, a memory device includes a resistance change memory element including a first electrode, a second electrode, and an intermediate layer provided between the first electrode and the second electrode, containing germanium (Ge), tellurium (Te) and at least one element selected from lithium (Li) and sodium (Na), and at least a part of which being capable of exhibiting a crystalline state.

Memory device

A storage device includes a first conductor, a second conductor, a variable resistance layer, a first portion, and a second portion. The variable resistance layer connects with the first conductor or the second conductor. The first portion is provided between the first conductor and the second conductor, and has a first threshold voltage value at which the resistance value changes. The second portion is provided between the first conductor and the first portion and/or between the second conductor and the first portion, and has a second threshold voltage value at which the resistance value changes and which is higher than the first threshold voltage value.

Growing community of inventors

Inazawa Aichi, Japan

Hiroki Kawai