Ube Industries, Inc.

Hiroki Kanato

Takumi Kadota

Chihiro Hasegawa

Hiroshi Nihei

Masashi Shirai

Osamu Fujimura

Hiroyuki Sakurai

Kouhei Watanuki

The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein

(Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound

An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Rand Rindependently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

Organoruthenium complex, and method for production of ruthenium thin film using the ruthenium complex

To provide a metal complex compound capable of being suitably used for manufacturing a metal-containing thin film by the CVD method and a method for preparing a metal-containing thin film. A metal complex compound comprising a &#x3b2;-diketonato ligand having an alkoxyalkyl-methyl group, and a method for preparing a metal-containing thin film using the metal complex compound by the CVD method.

Metal complex compound comprising &#x3b2;-diketonato ligand

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Ichihara, Japan

Hiroki Kanato