Sony Semiconductor Solutions Corporation

Sony Group Corporation

Hiroki Iwashita

Toshifumi Wakano

Akira Matsumoto

Keiji Tatani

Yusuke Otake

Takuya Sano

Yusuke Tanaka

Eiichi Tauchi

Hideo Harifuchi

Hideaki Togashi

Yoshihiro Ando

Akira Furukawa

Sho Nishida

Yusuke Murakawa

Mikio Ishimaru

Yoshito Nagashima

Yasumasa Akutagawa

Taku Minoda

Takahito Niwa

An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

Imaging element and imaging apparatus

The present disclosure relates to a solid-state imaging device and an electronic device that are configured to suppress the occurrence of noise and white blemishes in an amplification transistor having an element separation region which is formed by ion implantation. An amplification transistor has an element separation region formed by ion implantation. A channel region insulating film which is at least a part of a gate insulating film above a channel region of the amplification transistor is thin compared to a gate insulating film of a selection transistor, and an element separation region insulating film which is at least a part of a gate insulating film above the element separation region of the amplification transistor is thick compared to the channel region insulating film. The present disclosure can be applied to, for example, a CMOS image sensor, etc.

Solid state image sensor and electronic device

Growing community of inventors

Nagasaki, Japan

Hiroki Iwashita