Semiconductor Energy Laboratory Co., Ltd.

Amada Hodlings Co., Ltd.

Hiroki Inoue

Takanori Matsuzaki

Shuhei Nagatsuka

Kiyoshi Kato

Yoshiyuki Kurokawa

Kei Takahashi

Shunpei Yamazaki

Yuki Okamoto

Seiichi Yoneda

Takayuki Ikeda

Fumika Akasawa

Takahiko Ishizu

Tatsuya Onuki

Yutaka Shionoiri

Tomoaki Atsumi

Munehiro Kozuma

Takashi Nakagawa

Takeshi Aoki

Yusuke Negoro

Shintaro Harada

Jun Koyama

Ryota Tajima

Toshihiko Saito

Takuro Ohmaru

Yuto Yakubo

Koji Kusunoki

Koichiro Kamata

Yoshiaki Ito

Takahiro Fukutome

Tatsuji Nishijima

Tsutomu Murakawa

Yosuke Tsukamoto

Shuji Fukai

Takeya Hirose

Katsuki Yanagawa

Sho Nagao

Kaori Ikada

Hiromichi Godo

Hidetomo Kobayashi

Kazutaka Kuriki

Yohei Momma

Mayumi Mikami

Takahiro Tsuji

Shunsuke Sato

Minato Ito

Kousuke Sasaki

Takahiro Tuji

A battery control circuit with a novel structure, a battery protection circuit with a novel structure, and a power storage device including either of the battery circuits are provided. The power storage device includes a first circuit portion, a second circuit portion, a third circuit portion, and a secondary battery; the first circuit portion has a function of controlling charging of the secondary battery; the first circuit portion has a function of supplying the start time and the end time of the charging of the secondary battery to the third circuit portion; the second circuit portion has functions of generating a first voltage and a first current and supplying them to the third circuit portion; the third circuit portion has a function of generating a second voltage by charging the first current in a capacitor; and the third circuit portion has a function of comparing the first voltage and the second voltage.

Power storage device and method for operating power storage device

A novel semiconductor device that is highly convenient or reliable is provided. The semiconductor device includes a sensor unit, a first memory unit, a second memory unit, and a determination unit. The sensor unit supplies a sensor signal, the first memory unit retains the sensor signal, the second memory unit retains standard data and allowable difference information, the determination unit compares the sensor signal with the standard data, and the determination unit supplies a control signal in the case where a difference between the sensor signal and the standard data exceeds the allowable difference information.

Semiconductor device sensor unit

A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.

Imaging device

A semiconductor device with a small circuit scale is provided. The semiconductor device includes a first circuit and a second circuit. The first circuit includes first to n-th (n is an integer of 2 or more) transistors and the second circuit includes (n+1)-th to 2n-th transistors. The first to n-th transistors are connected in parallel to each other and the (n+1)-th to 2n-th transistors are connected in series to each other. First to n-th signals are supplied to the first circuit and the second circuit. The first circuit has a function of outputting a first potential when each of potentials of the first to n-th signals is lower than or equal to a first reference potential, and outputting a second potential when at least one of the potentials of the first to n-th signals is higher than the first reference potential. The second circuit has a function of outputting a third potential when each of the potentials of the first to n-th signals is higher than a second reference potential, and outputting the first potential when at least one of the potentials of the first to n-th signals is lower than or equal to the second reference potential.

Semiconductor device and driving method thereof

A semiconductor device that level-shifts a negative voltage and/or a positive voltage is provided. The semiconductor device includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, an input terminal, and an output terminal. A first terminal of the first transistor is electrically connected to a first terminal of the second transistor and the output terminal. A second terminal of the second transistor is electrically connected to a first terminal of the third transistor. A first terminal of the fourth transistor is electrically connected to a gate of the second transistor and a first terminal of the first capacitor, and a second terminal of the first capacitor is electrically connected to the input terminal. The first transistor, the second transistor, the third transistor, and the fourth transistor are of the same polarity.

Semiconductor device and imaging device

An imaging device with low power consumption is provided. A pixel includes a first circuit and a second circuit. The first circuit can generate imaging data and retain difference data that is a difference between the imaging data and data obtained in an initial frame. The second circuit includes a circuit that compares the difference data and a voltage range set arbitrarily. The second circuit supplies a reading signal based on the comparison result. With the use of the structure, reading from the pixel is not performed when it is determined that the difference data is within the set voltage range and reading from the pixel can be performed when it is determined that the difference data is outside the voltage range.

Imaging device, operation method thereof, and electronic device

An imaging device having a function of processing an image is provided. The imaging device has an additional function such as image processing, can hold analog data obtained by an image capturing operation in a pixel, and can extract data obtained by multiplying the analog data by a predetermined weight coefficient. Difference data between adjacent light-receiving devices can be obtained in a pixel, and data on luminance gradient can be obtained. When the data is taken in a neural network or the like, inference of distance data or the like can be performed. Since enormous volume of image data in the state of analog data can be held in pixels, processing can be performed efficiently.

Imaging device and electronic device

A novel oscillator, an amplifier circuit, an inverter circuit, an amplifier circuit, a battery control circuit, a battery protection circuit, a power storage device, a semiconductor device, an electric device, and the like are provided. The semiconductor device includes an oscillator including a first transistor containing a metal oxide, and a second transistor to a fifth transistor, in which a first potential is supplied to a gate of the second transistor and a gate of the third transistor when the first transistor is turned on, and the first potential is held when the first transistor is turned off. The oscillator supplies a first signal based on the first potential to a first circuit. The first circuit performs at least one of shaping and amplification on the first signal. The second transistor and the fourth transistor are connected in series, and the third transistor and the fifth transistor are connected in series. A source or a drain of the third transistor is electrically connected to a gate of the fourth transistor, and a source or a drain of the fourth transistor is electrically connected to the gate of the third transistor.

Semiconductor device and method for operating semiconductor device

A semiconductor device with reduced power consumption is provided. The semiconductor device includes a node ND, a node ND, a resistor, a capacitor, and a comparison circuit. The resistor is electrically connected in series between one of a positive electrode and a negative electrode of a secondary battery and a first terminal. The resistor has a function of converting current flowing between the one of the positive electrode and the negative electrode of the secondary battery and the first terminal into a first voltage. The first voltage is added to a voltage of the node NDthrough the capacitor. The comparison circuit has a function of comparing a voltage of the node NDand the voltage of the node ND. The comparison circuit outputs a signal that notifies detection of overcurrent when the voltage of the node NDis higher than the voltage of the node ND

Semiconductor device and battery pack

A semiconductor device that inhibits deterioration of a secondary battery is provided. The semiconductor device includes a secondary battery module and a first circuit. The secondary battery module includes a secondary battery and a sensor. The first circuit includes a variable resistor. The sensor has a function of measuring a temperature of the secondary battery. The first circuit has a function of judging the charge voltage of the secondary battery and outputting a first result; a function of judging the temperature of the secondary battery measured by the sensor and outputting a second result; a function of determining the magnitude of the variable resistor on the basis of the first result and the second result; a function of discharging the charge voltage through the variable resistor; and a function of stopping discharge when the charge voltage reaches a specified voltage.

Semiconductor device

A semiconductor device using unipolar transistors, in which high and low levels are expressed using high and low power supply potentials, is provided. The semiconductor device includes four transistors, two capacitors, two wirings, two input terminals, and an output terminal. A source or a drain of the first transistor and a source or a drain of the fourth transistor are electrically connected to the first wiring. A gate of the fourth transistor is electrically connected to the first input terminal, and a gate of the second transistor is electrically connected to the second input terminal. A source or a drain of the second transistor and a source or a drain of the third transistor are electrically connected to the second wiring. The first transistor, the second transistor, and the two capacitors are electrically connected to the output terminal.

Logic circuit formed using unipolar transistor, and semiconductor device

An imaging device having a motion detecting function and an image processing function is provided. The imaging device can detect a difference between a reference frame image and a comparative frame image, and can switch from a motion detecting mode to a normal image capturing mode when a significant difference is detected. A low-frame-rate operation in the motion detecting mode can reduce power consumption. Moreover, the imaging device has an image recognition function in combination with the motion detecting function, so that switching from the motion detecting mode to the normal image capturing mode can be performed when a particular image is recognized.

A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.

Semiconductor device including photoelectric conversion element

Growing community of inventors

Kanagawa, Japan

Hiroki Inoue