Kokusai Electric Corporation

Hiroki Hatta

Shin Sone

Yushin Takasawa

Satoshi Shimamoto

Yusaku Okajima

Yuji Takebayashi

Katsuyoshi Harada

Takeo Hanashima

Koei Kuribayashi

Ryota Horiike

Shota Tanaka

There is provided a technique capable of improving a step coverage performance of a film formed on a substrate. According to one aspect thereof, there is provided a substrate processing method including: (a1) supplying a first process gas such that a transfer velocity of the first process gas toward an edge region of a substrate is faster than the transfer velocity of the first process gas toward a central region of the substrate; (a2) supplying a second process gas such that a transfer velocity of the second process gas toward the central region of the substrate is faster than the transfer velocity of the second process gas toward the edge region of the substrate; and (b) supplying a reactive gas toward the substrate.

Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

There is included (a) modifying a film formed on a substrate in a process chamber set at a first pressure by supplying a gas containing hydrogen and oxygen to the film; (b) purging an interior of the process chamber by supplying an inert gas into the process chamber and exhausting the interior of the process chamber, at a second pressure at which the gas containing hydrogen and oxygen remaining in the process chamber after performing (a) is maintained in a gaseous state; and (c) vacuuming the interior of the process chamber so as to reduce a pressure of the interior of the process chamber after performing (b) to a third pressure lower than the second pressure.

Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, includes forming a film containing a predetermined element on a substrate by supplying a precursor containing the predetermined element to the substrate having a first temperature in a process chamber, changing a temperature of the substrate to a second temperature higher than the first temperature under an atmosphere containing a first oxygen-containing gas in the process chamber, and oxidizing the film while maintaining the temperature of the substrate at the second temperature under an atmosphere containing a second oxygen-containing gas in the process chamber.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Growing community of inventors

Toyama, Japan

Hiroki Hatta