Sanyo Electric Co., Ltd.

Ifire IP Corporation

Ifire Technology Corp.

Hiroki Hamada

Isao Yoshida

Takao Yamaguchi

Masayuki Shono

Shoji Honda

James Alexander Robert Stiles

Vincent Joseph Alfred Pugliese

Daisuke Ide

Kiichi Hirano

Hisashi Abe

Kiyoshi Yoneda

Yasuo Segawa

Yoshihiro Morimoto

Shigeki Matsuta

Nobuhiko Oda

Joe Acchione

Hiroyuki Kuriyama

Isao Hasegawa

Norio Tabuchi

John Wesley Moore

Yongbao Xin

Hiroaki Kouno

Eiji Taguchi

Nobuhiro Gouda

Shouzou Ohura

Koji Suzuki

Naoya Sotani

Susumu Oima

Yoichiro Aya

Yasuo Nakahara

Daniel Joseph Seale

Yang Maizhi

Li Wu

Manuela Peter

Akifumi Sasaki

Ye Yufeng

Tomoyuki Nouda

Peter Manuela

M Smy William

San Yu

Susumo Oima

Yoshida Isao

Abe Hisashi

Hui Zhang

An extended area uniform light source providing uniform luminance is taught for displays and other applications where the light emission can be planar or have curvature. The uniform light source is achieved using a combination of a blue light-emitting electroluminescent layer and a highly stable inorganic photoluminescent color conversion layer to tailor the color spectrum of the emitted light. The invention thus encompasses the uniform light source, displays incorporating the uniform light sources as well of methods of making such light sources and displays.

Surface-emission light source with uniform illumination

The present invention is an electroluminescent display that incorporates a laminated seal that inhibits exposure of display components to atmospheric contaminants and to a sealing process for fabrication of the same. The sealed electroluminescent display comprises a substrate upon which is constructed a thick dielectric electroluminescent display covered by a laminated seal comprising a lower multi-functional polymer film and an upper inorganic film that provides a barrier layer to inhibit exposure of the electroluminescent display structure to an atmospheric contaminant.

Laminated conformal seal for electroluminescent displays

A novel sub-structure of a thick film dielectric electroluminescent display and a thick film dielectric electroluminescent display incorporating the same is provided. The sub-structure comprises a barrier layer between a substrate and a thick film dielectric layer. The barrier layer is chemically inert with respect to the substrate and the thick film dielectric layer and the barrier layer inhibits diffusion of at least one chemical species therethrough. This sub-structure results in a higher capacitance for the thick dielectric layer, which provides higher display luminance and a reduced tendency for dielectric breakdown of the thick dielectric layer. The barrier layer permits for lower cost substrates, such as glass, to be used.

Barrier layer for thick film dielectric electroluminescent displays

A novel and improved composite thick film dielectric structure is provided to improve the operating stability of phosphors used in thick dielectric ac electroluminescent displays. The novel structure comprises one or more aluminum oxide layers disposed between the composite thick dielectric layer and the bottom of the phosphor layer of these displays.

Laminated thick film dielectric structure for thick film dielectric electroluminescent displays

A novel laminate is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioaluminate phosphor thin film layer and a magnesium oxide or magnesium oxide containing layer provided directly adjacent and in contact with the bottom of the phosphor thin film layer. The invention is particularly applicable to phosphors used in electroluminescent displays that employ thick dielectric layers subject to high processing temperatures to form and activate the phosphor films.

Magnesium oxide-containing barrier layer for thick dielectric electroluminescent displays

A novel laminate is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioaluminate phosphor thin film layer and an aluminum oxide or aluminum oxynitride layer provided directly adjacent and in contact with the bottom of the phosphor thin film layer. The invention is particularly applicable to phosphors used in electroluminescent displays that employ thick dielectric layers subject to high processing temperatures to form and activate the phosphor films.

Aluminum oxide and aluminum oxynitride layers for use with phosphors for electroluminescent displays

A thin film phosphor for an electroluminescent device, the phosphor being selected from the group consisting of thioaluminates, thiogallates and thioindates having at least one cation selected from elements of Groups IIA and IIB of the Periodic Table of Elements. The phosphor being activated by a rare earth metal and containing oxygen as a partial substitute for a portion of the sulphur in the crystal lattice of the thiogallate, thioindate or thioaluminate. The phosphor is a single phase homogeneous compound and provides improved luminance stability. An electroluminescent device comprising the thin film phosphor is also described and methods of making the phosphor of the invention.

Oxygen substituted barium thioaluminate phosphor materials

A first molybdenum layer made of a molybdenum film, an aluminum conductive layer made of an aluminum-neodymium alloy film, a second molybdenum layer made of a molybdenum film and an insulating film layer made of a silicon dioxide film are stacked, in this order from the bottom to the top, on an insulating substrate made of glass.

Display apparatus

A display unit capable of inhibiting moisture and gas from penetrating into a liquid crystal layer and an alignment layer also after formation of a display electrode and suppressing decomposition of a material forming the display electrode is obtained. In this display unit, an impurity-introduced layer containing an impurity element having high electronegativity is formed on the surface of an insulator film and the surface of the display electrode after formation of the display electrode. Thus, the insulator film and the display electrode are improved in effects of preventing transmission of moisture and gas also after formation of the display electrode. The impurity-introduced layer formed on the surface of the display electrode stabilizes the surface of an ITO film forming the display electrode, thereby suppressing decomposition of the ITO film.

Display unit and method of fabricating the same

A display apparatus having electroluminescense (EL) elements includes a light emitting layer for generating light. A high energy laser beam is irradiated on the luminous element layer to define a plurality of regions of the light emitting layer. A plurality of first electrodes are arranged generally parallel to each other over a first surface of the light emitting layer and a plurality of second electrodes are arranged generally parallel to one another and perpendicular to the first electrodes on a second, opposite surface of the light emitting. The EL elements are formed at the intersections of the first and second electrodes.

Display apparatus using electroluminscence elements and method of manufacturing the same

A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing the oxide film which is formed on the surface of the semiconductor film.

Semiconductor device manufacturing with amorphous film cyrstallization using wet oxygen

A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

Thin film transistors for display devices having two polysilicon active layers of different thicknesses

A method is obtained of manufacturing a semiconductor device including a semiconductor layer with high field-effect mobility. According to the semiconductor device manufacturing method, a semiconductor layer is formed on a substrate and then the semiconductor layer is irradiated with high energy beam. Then, a heat treatment is provided under a temperature condition capable of reducing the surface roughness of the semiconductor layer. The radiation of high energy beam toward the semiconductor layer improves the crystalinity of the semiconductor layer and the subsequent heat treatment reduces the surface roughness of the semiconductor layer to enhance the field-effect mobility of the semiconductor layer.

Method of manufacturing a semiconductor device

Growing community of inventors

Hirakata, Japan

Hiroki Hamada