Renesas Electronics Corporation

Hitachi, Ltd.

Nec Corporation

Nitto-denko Corporation

Nec Electronics Corporation

The University of Tokyo

National Institute for Materials Science

Hiroki Fujii

Takahiro Mori

Takeru Chiba

Hideyuki Koseki

Yoshiaki Deguchi

Akira Yamamoto

Ken Takeuchi

Akira Deguchi

Atsushi Sakai

Atsushi Kawamura

Yoshinori Ohira

Tomohiro Yoshihara

Hidenori Suzuki

Ryosuke Tatsumi

Eiju Katsuragi

Yasuyuki Tokunaga

Hiroaki Kumakura

Itsuhiro Hatanaka

Kazumichi Kato

Shigeo Tokumitsu

Hitoshi Kitaguchi

Makoto Saitou

Yoshiaki Mitsuoka

Takio Itou

Ryo Hanafusa

Shintarou Inoue

Youhei Hayashi

Sho Sawada

Takayuki Nakane

Kousuke Miyaji

Koh Johguchi

Tetsuro Taga

Shinichiro Kose

Akihiro Kiriyama

A storage system comprises nodes and drives, and includes at least one mounting area to install the drives. A node manages a parity group constituted of the plurality of drives; generates, in a case where a target drive that is installed in a first mounting area and that belongs to a first parity group is to be moved from the first mounting area to a second mounting area, difference information regarding a storage area where data was written into the target drive during a period in which the target drive is moved from the first mounting area to the second mounting area; and restore data written into the storage area by using data stored in other drives than the target drive that belongs to the first parity group based on the difference information, and write the data into the target drive that has been moved to the second mounting area.

Storage system, method for moving drives, and non-transitory computer-readable medium

It is made possible to pursue both higher speeds of rebuilds in the distributed RAID scheme and high availability due to acquisition of DE-failure tolerance. A virtual chunk includes k (k is an integer that is equal to or larger than two) virtual parcels including a virtual parcel having user data and a virtual parcel having element data that is redundant data for repairing the user data, the virtual parcels included in the same virtual chunk is stored by mapping the virtual parcels in storage areas of k mutually different physical storage drives among N (k<N) of the physical storage drives, and the maximum value of the numbers of the same virtual parcels to be mapped to the physical storage drives housed in the same drive enclosures is equal to or smaller than a predetermined value.

Storage system and storage administration method

The efficiency of the maintenance of a storage apparatus including a plurality of flash drives can be enhanced. In a storage apparatus including a plurality of SSDs and a CPU, the CPU specifies, based on lifetimes of the SSDs depending on amounts of data written to the SSDs, the SSD to be replaced on a scheduled maintenance date, gives notice of the SSD specified to be replaced, and copies data in the SSD to be replaced to another SSD by the scheduled maintenance date on which the replacement is to be performed.

Storage apparatus, maintenance support method, and maintenance support program

A storage system including a storage controller and a plurality of storage drives generates parity data from data. Data and parity data configure a stripe. A plurality of stripes configure a parity group allocated with a plurality of storage drives to store the parity group. A first parity group allows the number of storage drives allocated to the parity group to be equal to the number of data pieces configuring each stripe. A second parity group allows the number of storage drives allocated to the parity group to be larger than the number of data pieces configuring each stripe and allows data for each stripe to be distributed and stored in different combinations of storage drives. When the first parity group is converted to the second parity group, a storage drive is added so that it is allocated to the parity group. Data is moved to ensure a free area.

Storage system and control method of the same

A storage controller of a storage system performs, when failures occur in at least two drives, priority rebuilding and normal rebuilding in parallel, the priority rebuilding being performed so as to perform rebuilding using a reading drive for reading data for restoration of priority rebuild data to be preferentially rebuilt and a writing drive specified for writing the priority rebuild data restored, the normal rebuilding being performed so as to rebuilt normal rebuild data by using a specified reading drive and a specified writing drive.

Storage system and rebuilding method for storage system

Provided is a storage system and a storage management method, aiming at reducing data movement amount necessary for using an expanded capacity in a distributed RAID. When only A (A is a positive integer) physical storage drives are added, a storage controller selects virtual parcels that are mapped to different physical storage drives among N physical storage drives and are included in different virtual chunks, changes an arrangement of the selected virtual parcels to the added A physical storage drives, and constitutes a new chunk based on unallocated virtual parcels selected from different physical storage drives among the (N+A) physical storage drives.

Storage system and storage management method

A disclosed method includes selecting one or more regions having a predetermined size or more in a logical address space of a first memory drive when the first memory drive is partially failed, transferring data of the one or more selected regions to a second memory drive, reading data from another memory drive, which forms a RAID group with the first memory drive, to restore lost data caused by the partial failure, and writing the restored lost data to the first memory drive.

Data saving caused by a partial failure of the memory device

A semiconductor device which can secure a high breakdown voltage and to which a simplified manufacturing process is applicable and a method for manufacturing the semiconductor device are provided. An nburied region has a floating potential. An n-type body region is located on a first surface side of the nburied region. A psource region is located in the first surface and forms a p-n junction with the n-type body region. A pdrain region is located in the first surface spacedly from the psource region. A p-type impurity region PIR is located between the nburied region and the n-type body region and isolates the nburied region and the n-type body region from each other.

Semiconductor device and method for manufacturing the same

A storage device determines whether or not reading target data subjected to a first conversion process is divided and stored into multiple pages. When the data subjected to the first conversion process is stored in one of a plurality of pages, the data is read from the page, and a second conversion process for returning the data to a state before the data is subjected to the first conversion process is executed to the data. When the reading target data is divided and stored into two or more of the plurality of pages, a portion of the data is read from each of the two or more pages in which the portion of the data is stored, the portion of the data is stored in the buffer memory, the data subjected to the first conversion process is restored, and the second conversion process is executed to the restored data.

Storage device, its controlling method, and storage system having the storage device

A recessed portion is formed in a top surface of an isolation insulation film filling an isolation trench between a psource region and a pdrain region. A pdrift region is located below the isolation trench and connected to the pdrain region. A gate electrode fills the recessed portion. An n-type impurity region is located below the pdrift region and directly below the recessed portion.

A semiconductor device includes a high voltage NMOS transistor formation region defined by an element isolation insulating film, a CMOS transistor formation region defined by an element isolation insulating film, and a substrate contact portion. The substrate contact portion is formed in a region of a semiconductor substrate that is positioned between the high voltage NMOS transistor formation region and the element isolation insulating film so as to reach from the main surface side to a position deeper than the bottom of the element isolation insulating film. The substrate contact portion is in contact with the semiconductor substrate from a depth over a depth.

Semiconductor device and method of manufacturing the same

A semiconductor device including an isolation insulating film having a first thickness that is located between a drain region and a source region; a gate electrode formed over a region located between the isolation insulating film and the source region and that includes a part serving as a channel; an interlayer insulating film formed so as to cover the gate electrode; and a contact plug formed to reach the inside of the isolation insulating film while penetrating the interlayer insulating film, wherein the contact plug includes a buried part that is formed from the surface of the isolation insulating film up to a depth corresponding to a second thickness thinner than the first thickness.

Semiconductor device and manufacturing method thereof

When a data utilization ratio R which is a utilization ratio of sectors in one page is not lower than a threshold value Rthand when write data is not frequently-rewritten data, a flash memory is controlled such that the write data is stored into the flash memory. When the data utilization ratio R which is the utilization ratio of sectors in one page is lower than the threshold value Rthor when the write data is frequently-rewritten data although the data utilization ratio R is not lower than the threshold value Rth, a ReRAM is controlled such that the write data is stored into the ReRAM. This suppresses deterioration of the flash memory.

Memory controller, data storage device and memory control method using data utilization ratio

An object of the present invention is to further improve electric characteristics such as ON-resistance or an ON-breakdown voltage in a semiconductor device having a lateral MOS transistor. In a semiconductor device having a lateral MOS transistor, a buried electrode is formed at a part of an isolation insulating film located between a drain region and a gate electrode. The buried electrode includes a buried part. The buried part is formed from the surface of the isolation insulating film up to a depth corresponding to a thickness thinner than that of the isolation insulating film. The buried electrode is electrically coupled to the drain region.

Semiconductor device having a buried electrode and manufacturing method thereof

There is provided a semiconductor device having LDMOS transistors embedded in a semiconductor substrate to boost source-drain breakdown voltage, with arrangements to prevent fluctuations of element characteristics caused by electric field concentration so that the reliability of the semiconductor device is improved. A trench is formed over the upper surface of a separation insulating film of each LDMOS transistor, the trench having a gate electrode partially embedded therein. This structure prevents electric field concentration in the semiconductor substrate near the source-side edge of the separation insulating film.

Growing community of inventors

Kanagawa, Japan

Hiroki Fujii