Sanyo Electric Co., Ltd.

Hiroki Etou

Noriaki Sakamoto

Yoshiyuki Kobayashi

Kouji Takahashi

Hirotoshi Kubo

Hirokazu Fukuda

Makoto Oikawa

Shouji Miyahara

Junji Sakamoto

Eiju Maehara

Katsumi Okawa

Shigeaki Mashimo

Takaaki Saito

Toshinari Utsumi

Naofumi Tsuchiya

Kazunori Ohno

A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.

Protection circuit device using MOSFETs and a method of manufacturing the same

In a conventional power MOSFET, an electric field concentration occurs at a gate electrode bottom portion on the outermost periphery of an operating area, thereby causing a deterioration in high voltage strength between the drain and the source, or between the collector and emitter. In this invention, a trench at the outermost periphery of an operating area is shallower than trenches of the operating area. Thereby, the electric field concentration at the gate electrode bottom portion on the outermost periphery of the operating area is relieved, and a deterioration in high voltage strength between the drain and source is suppressed. Furthermore, by narrowing the outermost peripheral trench aperture portion, trenches different in depth can be formed by an identical step.

Method of manufacturing semiconductor device

Semiconductor device with vertical transistors

After a trench is formed in a conductive foil , a circuit element is mounted in a flip chip method. Then, an insulating resin is covered on the conductive foil as a support substrate. After reversion, the conductive foil is polished over the insulating resin as a support substrate at this time to separate the conductive paths. Accordingly, a circuit device having the conductive paths and the circuit elements supported by the insulating resin can be produced without employing the support substrate.

Circuit device and method of manufacturing the same

In the present invention, a vertical type MOSFET and a Schottky barrier diode which are used as a switching device of a DC--DC converter are formed on the same semiconductor substrate. Further, a barrier metal which is required for the Schottky barrier diode is also formed on an electrode portion of the vertical type MOSFET. In addition, a Schottky barrier diode forming region is formed to have low impurity concentration than a vertical type MOSFET forming region.

Semiconductor device and method of manufacturing the same

Growing community of inventors

Gunma, Japan

Hiroki Etou