Asm Japan K.k.

Nec Corporation

Renesas Electronics Corporation

Canon Denshi Kabushiki Kaisha

Other

Mitsubishi Jidosha Kogyo Kabushiki Kaisha

Mitsubishi Jidosha Engineering Kabushiki Kaisha

Semiconductor Leading Edge Technologies, Inc.

Hiroki Arai

Hideaki Fukuda

Takayuki Yamagishi

Tsuyoshi Kachi

Nobuyuki Shirai

Kiyoshi Satoh

Taketo Ochiai

Hirotaka Watanabe

Hiroki Miura

Kazuki Takano

Dayon Kou

Yuantian Wei

Sousuke Onodera

Ichiro Okabe

Akira Shimizu

Masato Nakamura

Satoru Takahashi

Naoto Tsuji

Yoshinori Morisada

Yuichi Miyake

Baiei Kawano

Hiroaki Kano

Tamihiro Kobayashi

Toshiaki Isogai

Yu Yoshizaki

Atsushi Ogita

Syunichiro Ohma

Hiroyuki Inoue

Muneaki Kato

The web server program causes the information processing apparatus to function as: a reception unit that receives a request from a web application executed on the web browser; an acquisition unit configured to acquire, from the request, information about a domain of the web application executed on the web browser; a determination unit that determines whether or not to permit communication with the web application executed on the web browser, based on the domain indicated in the information acquired by the acquisition unit; and a transmission unit that transmits a response to the web browser based on the result of determination of the determination unit, wherein the web server program communicates with an external apparatus connected to a network, and acquires, from the external apparatus, information used for authentication or authorization by the external apparatus.

Information processing apparatus, control method therefor, non-transitory computer-readable medium, and information processing system

A rear part structure of a vehicle includes: a pair of right and left rear side members; a pair of side sills which are connected to the rear side members; a pair of sub frame side members respective one ends of which are connected to connecting parts between the rear side members and the side sills, the sub frame side members being extended to a rear side of the vehicle, in a manner inclined inward in a lateral direction of the vehicle; and a sub frame center member one end of which is connected to the other ends of the sub frame side members, the sub frame center member being extended to the rear side of the vehicle.

Rear part structure of vehicle

An information processing unit includes a processing unit including a plurality of processor cores; and a power consumption reduction device configured to reduce power consumption of the processing unit. The power consumption reduction device measures the loads on threads that are running in the plurality of cores; checks the number of high load threads which are threads in a high load state and the number of low load threads which are threads in a low load state for each core, on the basis of the measuring results; selects, when there exists a core having high load threads whose number is less than a preset threshold on the number of high load threads, the core as a candidate core; and replaces the high load threads existing in the candidate core with the low load threads existing in other cores when the total number of the low load threads in a core other than the candidate core is not less than the number of the high load threads in the candidate core.

Power consumption reduction method of swapping high load threads with low load threads on a candidate core of a multicore processor

The time in the chipset of backup resources is synchronized easily at the system time. An information processing apparatus including: an operational chipset which includes a first Real Time Clock (RTC); a backup chipset which includes a second RTC: a third RTC which times system time; a difference time calculation unit which calculates a difference time between a system time periodically notified of from the first RTC of the operational chipset and the system time which the third RTC times; a holding unit which holds the difference time; a calculation unit which calculates a temporary system time which is set to the second RTC of the backup chipset to which a chipset switching operated, based on the system time of the third RTC and the difference time at the time of the chipset switching; and a configuration unit which sets the temporary system time to the second RTC of the backup chipset.

Information processing apparatus, system time synchronization method and computer readable medium

The characteristics of a semiconductor device including a trench-gate power MISFET are improved. The semiconductor device includes a substrate having an active region where the power MISFET is provided and an outer circumferential region which is located circumferentially outside the active region and where a breakdown resistant structure is provided, a pattern formed of a conductive film provided over the substrate in the outer circumferential region with an insulating film interposed therebetween, another pattern isolated from the pattern, and a gate electrode terminal electrically coupled to the gate electrodes of the power MISFET and provided in a layer over the conductive film. The conductive film of the pattern is electrically coupled to the gate electrode terminal, while the conductive film of another pattern is electrically decoupled from the gate electrode terminal.

Semiconductor device and manufacturing method of the same

Power semiconductor device and manufacturing method of the same

A shower platehas protrusionsformed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portionis left around apertures of gas inlet holesformed in the shower plate. With protrusionsbeing formed, a surface area of the first electrode is increased.

Shower plate having projections and plasma CVD apparatus using same

A plasma treatment apparatus for thin-film deposition includes a reactor chamber; a pair of parallel-plate electrodes disposed inside the chamber; and a radio-frequency power supply system used for transmitting radio-frequency power to one of the parallel-plate electrodes via multiple supply points provided on the one of the parallel-electrodes. The radio-frequency power supply system includes a radio-frequency transmission unit which includes an inlet transmission path and multiple branches branched off from the inlet transmission path multiple times. Each branch is connected to the supply point and has a substantially equal characteristic impedance value.

Plasma treatment apparatus

A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the susceptor.

Semiconductor-processing apparatus provided with susceptor and placing block

In a method of forming a fine pattern, a silicon-oxide-based film is formed directly or by way of another layer on a substrate or on an underlying layer. The silicon-oxide-based film is formed such that nitrogen content of the surface thereof assumes a value of 0.1 atm. % or less. A chemically-amplified photoresist layer is formed on the silicon-oxide-based film. A mask pattern of a mask is transferred onto the chemically-amplified photoresist layer upon exposure through the mask. Thus, there is prevented generation of a tapered corner in a portion of a resist pattern in the vicinity of a boundary area between the resist pattern and a substrate.

Method of forming a fine pattern using a silicon-oxide-based film, semiconductor device with a silicon-oxide-based film and method of manufacture thereof

A substrate-supporting apparatus, wherein a substrate is not warped or distorted and a film with uniform thickness is formed, is a semiconductor substrate-supporting apparatus which supports and heats semiconductor substrates inside a vacuum-pumped reaction chamber. On the substrate-supporting surface of the semiconductor substrate-supporting apparatus, a concave portion which includes a depression slanting from the peripheral portion to the center is provided, the semiconductor substrate is supported in a position where the peripheral portion of the back surface of the substrate contacts the slanting surface of the concave portion, and the concave portion is formed so that an interval between the center of the concave portion and the semiconductor substrate becomes the designated distance. The slanting surface of the concave portion may include a portion of a spherical surface or a conical surface.

Semiconductor substrate-supporting apparatus

There is described a method of forming a fine pattern aimed at depositing a silicon-nitride-based anti-reflection film which is stable even at high temperature and involves small internal stress. The method is also intended to preventing occurrence of a footing pattern (a rounded corner) in a boundary surface between a photoresist and a substrate at the time of formation of a chemically-amplified positive resist pattern on the anti-reflection film. The method includes the steps of forming a silicon-nitride-based film directly on a substrate or on a substrate by way of another layer; and forming a photoresist directly on the silicon-nitride-based film or on the silicon-nitride-based film by way of another layer. The silicon-nitride-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700&deg; C., through use of a plasma CVD system. The method further includes a step of depositing a silicon-oxide-based film immediately below the photoresist. The silicon-oxide-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700&deg; C., through use of a plasma CVD system.

Method of forming fine pattern

In a plasma CVD apparatus including a reaction chamber and a susceptor to form a thin film on a semiconductor substrate, a pretreatment step is conducted to form a surface layer on the surface of the susceptor so that the surface layer can prevent the semiconductor substrate from electrostatically adhering to the surface of the susceptor. The pretreatment step includes steps of introducing into the reaction chamber a gas containing, the same gas as the gas for use in a film-forming treatment, and forming a surface layer on the susceptor surface by a CVD process.

Method of forming thin film onto semiconductor substrate

A method for producing a plasma silicon nitride series film with a small heat load having a low hydrogen concentration is provided. The method is for producing a silicon nitride series film on a material to be treated using a plasma CVD apparatus having a reaction chamber evacuated to vacuum. The method comprises the steps of introducing a monosilane gas (SiH ) and a nitrogen gas (N ) as raw material gases into the reaction chamber at prescribed flow rates, and heating the material to be treated to a prescribed temperature. At this time, it is characterized in that the flow rate of the nitrogen gas is at least 100 times the flow rate of the monosilane gas.

Growing community of inventors

Tokyo, Japan

Hiroki Arai