Semiconductor Energy Laboratory Co., Ltd.

Other

Tdk Corporation

Hiroki Adachi

Shunpei Yamazaki

Satoru Idojiri

Masakatsu Ohno

Koichi Takeshima

Yasuhiko Takemura

Seiji Yasumoto

Shingo Eguchi

Kayo Kumakura

Toru Takayama

Yoshiharu Hirakata

Kazuo Nishi

Kohei Yokoyama

Hisashi Ohtani

Hidekazu Takahashi

Daiki Yamada

Yuusuke Sugawara

Hongyong Zhang

Yasuyuki Arai

Hisao Ikeda

Yasuhiro Jinbo

Masataka Sato

Hideto Ohnuma

Ritsuko Kawasaki

Tomoyuki Aoki

Yohei Monma

Akira Takenouchi

Kenichi Okazaki

Naoto Kusumoto

Hideki Uochi

Akihiro Chida

Naoya Sakamoto

Hironobu Takahashi

Junpei Yanaka

Masahiko Hayakawa

Koji Kusunoki

Hiroshi Shibata

Taketomi Asami

Yoshikazu Hiura

Nobuhiro Tanaka

Saki Eguchi

Akiharu Miyanaga

Junya Maruyama

Daisuke Kubota

Toshiji Hamatani

Takeshi Fukada

Hiroshi Uehara

Hideaki Kuwabara

Kazunori Watanabe

Tatsuya Arao

Tomoya Aoyama

Yasuharu Hosaka

Takuya Tsurume

Eiji Sugiyama

Hiroaki Ishihara

Tatsuya Sakuishi

Itaru Koyama

Kazuhisa Nakashita

Hiroyuki Watanabe

Yutaka Uchida

Takeshi Fukunaga

Hiroyuki Ogawa

Kensuke Yoshizumi

Yuugo Goto

Daiki Nakamura

Masataka Nakada

Etsuko Fujimoto

Masahiro Katayama

Kazuhide Tomiyasu

Takahiro Iguchi

Masato Yonezawa

Hisato Shinohara

Yukihiro Isobe

Rai Sato

Nozomi Horikoshi

Taiki Nonaka

Yuka Sato

Yoshifumi Tanada

Kunihiko Suzuki

Koji Ono

Ryo Hatsumi

Yohei Momma

Taisuke Kamada

Ryu Komatsu

Shuji Fukai

Natsuko Takase

Koji Moriya

Naoto Goto

Saki Obana

Ryo Yamauchi

Hiroto Shinoda

Hiroyuki Yajima

Ryu Kokubo

A method for manufacturing a display apparatus having high display quality is provided. A method for manufacturing a display apparatus including first to third insulators, first and second conductors, and first and second EL layers is provided. The first conductor is formed over the first insulator, and the second insulator is formed over the first insulator and over the first conductor. A first opening portion reaching the first conductor is formed in the second insulator. A sacrificial layer is formed over the second insulator and over a bottom surface of the first opening portion, and a resist is applied over the sacrificial layer. Light exposure and development are performed on the resist, so that a second opening portion reaching the sacrificial layer is formed in a region overlapping with the first conductor. A third opening portion is formed in a region of a bottom surface of the second opening portion, and the first EL layer is formed over the resist, over the sacrificial layer, and over the first conductor. Then, the resist and the sacrificial layer are removed, whereby the first EL layer over the resist and over the sacrificial layer is removed. The second EL layer is formed over the first EL layer and over the second insulator, and the second conductor and the third insulator are formed in order over the second EL layer.

Display apparatus, electronic device, and method for manufacturing display apparatus

A novel display panel that is highly convenient or reliable is provided. The display panel includes a first region and a second region. The second region is provided with a first component, and the second region can be bent with the first component facing outward. The first component includes a first elastic body and a second elastic body. The second elastic body includes an end portion part or the whole of which is covered with the first elastic body. The second elastic body has a higher elastic modulus than the first elastic body.

Flexible display panel

A light-emitting device capable of long-time display in a bent state is provided. A light-emitting device that can be repeatedly bent with a small radius of curvature is provided. The flexible light-emitting device includes a light-emitting element, a first inorganic insulating layer, a second inorganic insulating layer, and a first organic insulating layer. The first organic insulating layer is positioned over the first inorganic insulating layer. The light-emitting element is positioned over the first inorganic insulating layer with the first organic insulating layer therebetween. The second inorganic insulating layer is positioned over the light-emitting element. An end portion of the first inorganic insulating layer and an end portion of the second inorganic insulating layer are each positioned inward from an end portion of the first organic insulating layer. The end portion of the first organic insulating layer is exposed on a side surface of the light-emitting device. The first inorganic insulating layer and the second inorganic insulating layer are preferably in contact with each other outside an end portion of the light-emitting element.

Light-emitting device, light-emitting module, electronic device, and manufacturing method of light-emitting device

A display unit with a high definition is provided. The display unit includes a transistor, a light-emitting diode, a first conductive layer, a second conductive layer, a first insulating layer, and a second insulating layer. The transistor is electrically connected to the first conductive layer, and the first conductive layer and the first insulating layer are positioned over the transistor. The second conductive layer is positioned over the first conductive layer. The second insulating layer is positioned over the first insulating layer. The light-emitting diode includes a first electrode over the second insulating layer, a light-emitting layer over the first electrode, and a second electrode over the light-emitting layer. The second electrode is electrically connected to the second conductive layer. The height of a surface of the first conductive layer on the second conductive layer side is substantially the same as the height of a surface of the first insulating layer on the second insulating layer side. The first insulating layer and the second insulating layer are directly bonded to each other. The second conductive layer is positioned in an opening in the second insulating layer and is electrically connected to the first conductive layer.

Display unit, display module, electronic device, and method for manufacturing the display unit

A display device with high display quality is provided. A display device with low power consumption is provided. In the display device, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package are included in a pixel. The light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light-emitting diode includes a first electrode and a second electrode. The second light-emitting diode includes a third electrode and a fourth electrode. One of a source and a drain of the first transistor is electrically connected to the first electrode through the second conductive layer. One of a source and a drain of the second transistor is electrically connected to the third electrode through the third conductive layer. The first conductive layer is electrically connected to each of the second electrode and the fourth electrode through the fourth conductive layer. A constant potential is supplied to the first conductive layer.

Display device, display module, and electronic device

A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Display device and method for manufacturing the same

A display device having a function of sensing light is provided. The display device includes a first substrate, a second substrate, a light-receiving element, a light-emitting element, a resin layer, and a light shielding layer. The light-receiving element, the light-emitting element, the resin layer, and the light shielding layer are each positioned between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode over the first substrate, an active layer over the first pixel electrode, and a common electrode over the active layer. The light-emitting element includes a second pixel electrode over the first substrate, a first light-emitting layer over the second pixel electrode, and the common electrode over the first light-emitting layer. The resin layer and the light shielding layer are each positioned between the common electrode and the second substrate. The resin layer includes a portion overlapping with the light-emitting element. The light shielding layer includes a portion positioned between the common electrode and the resin layer. The resin layer includes a portion overlapping with the light-receiving element or is provided in an island shape. At least part of light passing through the second substrate enters the light-receiving element without through the resin layer.

A display device with high display quality and low power consumption is provided. In the display device, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package are included in a pixel, and then the light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. One of a source and a drain of the first transistor is electrically connected to the first light-emitting diode through the second conductive layer. One of a source and a drain of the second transistor is electrically connected to the second light-emitting diode through the third conductive layer. The first conductive layer supplied with a constant potential is electrically connected to the other electrodes of the first and second light-emitting diodes through the fourth conductive layer.

A display device with high display quality is provided. The display device includes a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, an upper electrode over the first EL layer and the second EL layer, a first region not provided with the first lower electrode below the first EL layer, and a second region not provided with the second lower electrode below the second EL layer. In the first region, the upper electrode is positioned not to be in contact with the first lower electrode. In the second region, the upper electrode is positioned not to be in contact with the second lower electrode.

Display device

A high-yield fabricating method of a semiconductor device including a peeling step is provided. A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

Semiconductor device comprising adhesive layer and resin layer

A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 &#x3bc;m and less than or equal to 3 &#x3bc;m is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

Peeling method and manufacturing method of flexible device

Display panel

The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.

Separation method, display device, display module, and electronic device

A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

Growing community of inventors

Tochigi, Japan

Hiroki Adachi