Mitsubishi Materials Corporation

Mitsubishi Materials Electronic Chemicals Co., Ltd.

Japan Science and Technology Agency

Mitsubishi Materials Electronics Chemicals Co., Ltd.

Hirokazu Tsukada

Kensuke Kageyama

Kazuhiko Yamasaki

Tatsuya Shimoda

Satoko Higano

Takaaki Miyasako

Hiroto Akaike

A silver-coated resin particle having a resin particle and a silver coating layer provided on a surface of the resin particle, in which an average value of a 10% compressive elastic modulus is in a range of 500 MPa or more and 15,000 MPa or less and a variation coefficient of the 10% compressive elastic modulus is 30% or less.

Silver-coated resin particle

A silver-coated resin particle including a heat-resistant resin core particle and a silver coating layer formed on the surface of the resin core particle. The average grain diameter of the resin core particle is 0.1 to 10 &#x3bc;m, the amount of silver contained in the silver coating layer is 60 to 90 parts by mass, relative to 100 parts by mass of the silver-coated resin particle, and the exothermic peak temperature of the silver-coated resin particle by differential thermal analysis is 265&#xb0; C. or higher.

Silver-coated resin particles, method for manufacturing same, and electroconductive paste using same

A conductive paste includes: a silver-coated resin; and an organic vehicle that includes a thermosetting resin composition, a curing agent, and a solvent, in which the thermosetting resin composition is an epoxy resin composition which is solid at room temperature and has a melt viscosity of 0.5 Pa&#xb7;s or lower at 150&#xb0; C., and a mass ratio of a content of the thermosetting resin composition to a content of the silver-coated resin is 10 to 40:60 to 90.

Conductive paste

An object of the present invention is to achieve improvement in performance of a thin film transistor including an oxide as a gate insulating layer, or simplification and energy saving in the processes of producing such a thin film transistor. A thin film transistor () of the present invention includes a first oxide layer (possibly containing inevitable impurities) () consisting of lanthanum (La) and tantalum (Ta), which has a surface () formed after a precursor layer obtained from a precursor solution as a start material including a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes is exposed to a hydrochloric acid vapor, between a gate electrode () and a channel (). Moreover, in the thin film transistor, the surface () of the first oxide layer () is in contact with the channel ().

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Akita, Japan

Hirokazu Tsukada